Beruflich Dokumente
Kultur Dokumente
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Applications
Spin-Torque Transfer
Magnetoresistive Random
Access Memory (STT-
MRAM)
Quantum Computing
1. . S. Yuasa, R. Matsumoto, A. Fukushima, H. Kubota, K. Yakushiji, T. Nakamura, Y. Suzuki and K. Ando. (2009). Tunnel Magnetoresistance Effect and Its Applications.
2. M. Sharad, K. Yogendra, Kon-Woo Kwon and K. Roy. (2013). Design of ultra high density and low power computational blocks using nano-magnets.
3. A. Daley. (2011). Qubits and The Power of Quantum Computing. Retrieved from: http://qoqms.phys.strath.ac.uk/research_qc.html 2
Spintronic Devices
• Short for “spin transport electronics”
• Based on intrinsic property of electron spin
• 2 basic states: spin-up & spin-down
• Uses ubiquitous ferromagnetic materials
• Altering of magnetic states in materials at the atomic
level
• Great for storage and memory (non-volatile)
6. Chang, L., Wang, M., Liu, L., Lou, S., Xiao, P. (2007) A Brief What magnetoresistance looks like
Introduction To Giant Magnetoresistance. 1-11.
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Advantages of p-MTJs
• High thermal stability
• Lower critical current densities for high-speed spin transfer torque (STT) switching
• Ultra-low power consumption ~49 -100μA Perpendicular MTJ
In-Plane MTJ
• Perpendicular magnetic anisotropy (PMA)
• High density of magnetic moments
Au/Ti Contact
FePd
MgO
Co/Pd
Au/Ti Contact
SiO2 Substrate
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Fabrication & Materials
• Patterning & development using ion and optical lithography techniques
• Molecular Beam Epitaxial Sputtering
• Mask-Aligned UV Exposure
• Physical Vapor Deposition
• Ion Mill Etching
• Rapid Thermal Anneal
Begin experiment
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Processing Steps (Continued)
2. UV Lithography 3. Develop
• Run Karl Suss: • RD6 developer-
• Hard contact (30-35) sec
• DI water- 1 min
• 27 sec exposure
• N2 dry
• 100 μm gap
• Microscope-
• Microscope-inspect features inspect features
• Bake @ 105C- 1 min
4. Ion Etching
Ion mill parameters:
Beam voltage: 200V
Beam current: 70A
Accelerator voltage: 24V
LFN Ar: 6.0
Stage Angle: 75 deg
Keep experiment going
Process time: 15 min
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Process Steps (Continued)
5. Prepare Sample
• Remove resist w/ acetone & 1165
• Clean w/ Acetone, Methanol, Iso, & N2 dry
• Spin-coat :
• 300 rpm- 3 sec
• 4000 rpm- 30 sec
• Bake @ 120C - 1 min
6. Repeat step 3
• 1165 developer- 35 sec
• Ultrasonic bath
7. Post Anneal
• Set parameters to:
• 250C -1400 sec
• Beam intensity- 4.0
• N2 flow rate: 10
Finishing up experiment
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Device Testing
• Room & low temperature characterization
• LabView analysis
• Point-probe method
• Wire bonding
• B-Field switching (1.5-3.0 kOe)
T2 T3
Terminal 1
T4
T6 T5
8. Zhang, D., Sun, C., Lv, Y., Schliep, K., Zhao, Z., Chen, J. Y., Voyles, P. M.,
Wang, J. P.. (2018). L10-FePd Synthetic Antiferromagnet Through a Face- Making sure the MTJs work
centered-cubic Ruthenium Spacer Utilized for Perpendicular Magnetic Tunnel
Junctions. 24. 14
Future Work
• Scaling & testing functional nano-MTJs
• Implement material candidates in fabrication procedure
• Co/Pd, FePd, W/Ta, WTe2 –Examples of materials researchers use in our labs including
diffusion barriers
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