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CMOS NAND Gates

• Use 2n transistors for n-input gate

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• CMOS NAND -- switch model

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• CMOS NAND -- more inputs (3)

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• Inherent inversion.
• Non-inverting buffer:

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• 2-input AND gate:

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CMOS NOR Gates
• Like NAND -- 2n transistors for n-input gate

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NAND vs. NOR
• For a given silicon area, PMOS transistors are
“weaker” than NMOS transistors.
NAND NOR

• Result: NAND gates are preferred in CMOS.


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Limited # of inputs in one gate
• 8-input CMOS NAND

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Fancy stuff

• CMOS AND-OR-
INVERT gate

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CMOS Electrical Characteristics
• Digital analysis works only if circuits are
operated in spec:
– Power supply voltage
– Temperature
– Input-signal quality
– Output loading
• Must do some “analog” analysis to prove that
circuits are operated in spec.
– Fanout specs
– Timing analysis (setup and hold times)

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Output-voltage drops
• Resistance of “off” transistor is > 1 Megohm,
but resistance of “on” transistor is nonzero,
– Voltage drops across “on” transistor, V = IR
• For “CMOS” loads, current and voltage drop
are negligible.
• For TTL inputs, LEDs, terminations, or other
resistive loads, current and voltage drop are
significant and must be calculated.

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Limitation on DC load
• If too much load, output voltage will go outside
of valid logic-voltage range.

• VOHmin, VIHmin
• VOLmax, VILmax
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Input-loading specs
• Each gate input requires a certain amount of
current to drive it in the LOW state and in the
HIGH state.
– IIL and IIH
– These amounts are specified by the manufacturer.
• Fanout calculation
– (LOW state) The sum of the IIL values of the driven
inputs may not exceed IOLmax of the driving output.
– (HIGH state) The sum of the IIH values of the driven
inputs may not exceed IOHmax of the driving output.
– Need to do Thevenin-equivalent calculation for non-
gate loads (LEDs, termination resistors, etc.)
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Manufacturer’s data sheet

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TTL Logic Levels and Noise Margins
• Asymmetric, unlike CMOS

• CMOS can be made compatible with TTL


– “T” CMOS logic families

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CMOS vs. TTL Levels

CMOS levels TTL levels

CMOS with TTL Levels


-- HCT, FCT, VHCT, etc.

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TTL differences from CMOS
• Asymmetric input and output characteristics.
• Inputs source significant current in the LOW
state, leakage current in the HIGH state.
• Output can handle much more current in the
LOW state (saturated transistor).
• Output can source only limited current in the
HIGH state (resistor plus partially-on transistor).
• TTL has difficulty driving “pure” CMOS inputs
because VOH = 2.4 V (except “T” CMOS).

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Transition times

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Transition-time considerations
• Higher capacitance ==> more delay
• Higher on-resistance ==> more delay
• Lower on-resistance requires bigger
transistors
• Slower transition times ==> more power
dissipation (output stage partially shorted)
• Faster transition times ==> worse
transmission-line effects (Chapter 11)
• Higher capacitance ==> more power
dissipation (CV2f power), regardless of rise
and fall time
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CMOS transmission gates

• 2-input multiplexer

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Open-drain outputs
• No PMOS transistor, use resistor pull-up

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What good is it?
• Open-drain bus

• Problem -- really bad rise time

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