Manufactured as npn or pnp devices. Usually called transistor only.
Has 3 doped region : emitter (bottom
region/heavily doped), base (middle region/lightly doped) and collector (the top region/intermediate doped) Collector-base juntion (collector diode)
Emitter- base juntion
(emitter diode) As we know that free electron in n region Will Diffuse across the junction and recombine with holes in p region.
The result is 2 depletion layer (has BP) in fig 2.
Fig 1. NPN transistor before difussion
fig 2. Depletion layer
Unbiased Transistor is like 2 back-to-back diode. It has 2 junction : one between emitter and base (lower diode, usually called emitter diode), another between collector and base (upper diode, usually called collector diode).
In actual transistor base region is much
thinner compared to collector and emitter If An unbiased transistor connected to external voltage source, so we can get currents through the different parts of transistor. Emitter acts as free electron injector into base Base acts to pass emitter-injected electron to the collector Collector as its name is work to collect most of the electron from base. 𝑉𝐵𝐵 : Voltage source to Forward Biased emitter diode
𝑉𝑐𝑐 : Voltage source to Reverse Biased collector diode
Fig 4. free electron from base flow into collector
𝑉𝐵𝐵 Forward biased the emitter diode, forcing the free electron in the emitter enter the base. The thin and lightly doped base gives almost all these electrons enough time to diffuse into the collector. These electrons flow through the collector, through 𝑅𝑐 into the positive terminal of the 𝑉𝐶𝐶 voltage source. Using KCL 𝐼𝐸 = 𝐼𝐶 + 𝐼𝐵 since 𝐼𝐵 is so small, so 𝐼𝐸 ≈ 𝐼𝐶 and 𝐼𝐵 ≪ 𝐼𝐶 (base current is much smaller than collector).
Define as DC collector current divided by the DC emitter current : 𝐼𝐶 𝛼𝑑𝑐 = 𝐼𝐸 Since 𝐼𝐸 ≈ 𝐼𝐶 , so 𝜶𝒅𝒄 slightly less than 1 (for low-power transistor typically greater than 0.99 and for high- power transistor 𝜶𝒅𝒄 is typically greater than 0.95 Also known as current gain 𝐼𝐶 𝛽𝑑𝑐 = 𝐼𝐵 Transistor haa a collector current 10 mA, base current 40µA. What is the current gain of the transistor? 𝐼𝐶 10𝑚𝐴 𝛽𝑑𝑐 = = = 250 𝐼𝐵 40𝑢𝐴