Electronic Devices & Circuits (EDC)

PE-124
Lecture No. am_9
Prepared by: Engr. Shafaq Ejaz

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 Chapter No. 8
Field Effect Transistors

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 FET
8–0: Introduction
8–1: The JFET
8–2: JFET Characteristics and Parameters
8–3: JFET Biasing
8–4: The Ohmic Region
8–5: The MOSFET
8–6: MOSFET Characteristics and Parameters
8–7: MOSFET Biasing
8–8: The IGBT
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 E-MOSFET Transfer Characteristics

The E-MOSFET uses only channel

enhancement. Therefore, an n-channel device
requires a positive gate-to-source voltage, and a
p-channel device requires a negative gate-to-
source voltage.

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 E-MOSFET Transfer Characteristics

Figure shows the general transfer characteristic curves for both types of E-MOSFETs.
There is no drain current when VGS=0. Therefore, the E-MOSFET does not have a
significant IDSS parameter, as do the JFET and the D-MOSFET.
Notice also that there is ideally no drain current until VGS reaches a certain nonzero
value called the threshold voltage, VGS(th).
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 E-MOSFET Transfer Characteristics

The equation for the parabolic transfer characteristic curve of the E-

MOSFET differs from that of the JFET and the D-MOSFET because the
curve starts at VGS(th) rather than VGS(off ) on the horizontal axis and never
intersects the vertical axis. The equation for the E-MOSFET transfer
characteristic curve is:

The constant K depends on the particular MOSFET and can be

determined from the datasheet by taking the specified value of ID, called
ID(on), at the given value of VGS.
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 D-MOSFET Transfer Characteristics

The D-MOSFET can operate with either

positive or negative gate voltages.

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 D-MOSFET Transfer Characteristics

The point on the curves where VGS = 0 corresponds to IDSS.

The point where ID = 0 corresponds to VGS(off). As with the JFET VGS(off) = -VP.
The square-law expression for the JFET curve also applies to the D-MOSFET
curve.
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 FET
8–0: Introduction
8–1: The JFET
8–2: JFET Characteristics and Parameters
8–3: JFET Biasing
8–4: The Ohmic Region
8–5: The MOSFET
8–6: MOSFET Characteristics and Parameters
8–7: MOSFET Biasing
8–8: The IGBT
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 E-MOSFET Biasing
As E-MOSFETs must have a VGS
greater than the threshold value, VGS(th) ,
zero bias cannot be used.
Figure shows two ways to bias an E-
MOSFET (D-MOSFETs can also be
biased using these methods).
In either the voltage-divider or drain-
feedback bias arrangement, the purpose In the drain-feedback bias circuit
in (b), there is negligible gate
is to make the gate voltage more
current and, therefore, no voltage
positive than the source by an amount drop across RG. This makes
VGS=VDS.
exceeding VGS(th).
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 E-MOSFET Biasing

Equations for the analysis of the voltage-divider bias are as follows:

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 D-MOSFET Biasing
D-MOSFETs can be operated with either positive or negative values of VGS.
A simple bias method is to set VGS = 0 so that an ac signal at the gate varies the gate-
to source voltage above and below this 0 V bias point.

A MOSFET with zero bias is shown in Figure (a). Since VGS = 0, ID =IDSS as indicated.
The drain-to-source voltage is expressed as follows:
VDS = VDD - IDSSRD

The purpose of RG is to
accommodate an ac signal input by
isolating it from ground, as shown
in Figure (b). Since there is no dc
gate current, RG does not affect the
zero gate-to-source bias. A zero-biased D-MOSFET.
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 FET
8–0: Introduction
8–1: The JFET
8–2: JFET Characteristics and Parameters
8–3: JFET Biasing
8–4: The Ohmic Region
8–5: The MOSFET
8–6: MOSFET Characteristics and Parameters
8–7: MOSFET Biasing
8–8: The IGBT
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 IGBT
The IGBT (insulated-gate bipolar transistor) combines features
from both the MOSFET and the BJT that make it useful in high-
voltage and high-current switching applications.
The IGBT has largely replaced the MOSFET and the BJT in
many of these applications.
The IGBT is a device that has the output conduction
characteristics of a BJT but is voltage controlled like a MOSFET;
it is an excellent choice for many high-voltage switching
applications.

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 IGBT
The IGBT has MOSFET input characteristics and BJT output
characteristics. BJTs are capable of higher currents than FETs, but
MOSFETs have no gate current because of the insulated gate structure.
IGBTs exhibit a lower saturation voltage than MOSFETs and have about
the same saturation voltage as BJTs. IGBTs are superior to MOSFETs in
some applications because they can handle high collector-to-emitter
voltages exceeding 200 V and exhibit less saturation voltage when they
are in the on state. IGBTs are superior to BJTs in some applications
because they can switch faster. In terms of switching speed, MOSFETs
switch fastest, then IGBTs, followed by BJTs, which are slowest. A
general comparison of IGBTs, MOSFETs, and BJTs is given in Table 8–1.
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 IGBT
The IGBT has three
terminals: gate, collector, and
emitter.
One common circuit symbol
is shown in Figure. It is
similar to the BJT symbol
except there is an extra bar
representing the gate structure
of a MOSFET rather than a
base.
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 IGBT

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 IGBT
Operation:

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 IGBT
Operation:
The IGBT is controlled by the gate voltage just like a MOSFET.
Essentially, an IGBT can be thought of as a voltage-controlled BJT,
but with faster switching speeds.
Because it is controlled by voltage on the insulated gate, the IGBT has
essentially no input current and does not load the driving source.
The input element is a MOSFET, and the output element is a bipolar
transistor. When the gate voltage with respect to the emitter is less than
a threshold voltage, V thresh, the device is turned off.
The device is turned on by increasing the gate voltage to a value
exceeding the threshold voltage.
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 IGBT
Operation:
The npnp structure of the IGBT forms a parasitic transistor and an
inherent parasitic resistance within the device, as shown in red in
Figure. These parasitic components have no effect during normal
operation. However, if the maximum collector current is exceeded
under certain conditions, the parasitic transistor, Qp can turn on.
If Qp turns on, it effectively combines with Q1 to form a parasitic
element, as shown in Figure, in which a latch-up condition can occur.
In latch-up, the device will stay on and cannot be controlled by the
gate voltage. Latch-up can be avoided by always operating within the
specified limits of the device.
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 IGBT
Operation:

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 Q?
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