Beruflich Dokumente
Kultur Dokumente
Microelectronic
Circuits
BITS Pilani
Pilani Campus
BITS Pilani
Pilani Campus
Amplifier Basics
Mixed signal System design
ADC- SubSystem Design
• A to D Converter, D to A Converter
Flash ADC-100 Msps
Band width requirement of OPAMP
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DAC
Design issues
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Sinusoid
• Important signal in analysis , design, testing
• For an LTI system, if input is sinusoid, output is
also sinusoid with modified amplitude and
phase. Hence analysis is easy
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Why amplifier first?
• Reasons—
• Fundamental signal processing function
• Employed in every electronic system
• Easy to understand
• Design techniques can be easily extended
to design of complex analog circuits.
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Amplifier circuit symbol
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Amplifiers
• Requirement---Information contained in
the signal should not get changed/ Output
must be exact replica of the input.
• Relation ship of amplifiers
vo(t) = A vi(t)
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Characterizing parameters
• Gain
• Voltage swing
• Linearity
• Power efficiency
• Frequency response, bandwidth
• Power supply and dc bias
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Analog Design tradeoffs
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Gain/ transfer characteristics
• Voltage Gain
• Current gain
• Power gain
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VTC
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Information from VTC
• Highest and Lowest signal amplitude
• Gain—steepness of transition
• Inverting/ non inverting nature
• Single/ dual power supply
• Offset
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Measuring Unit---Use of Decibel unit
• The decibel, or dB, is a means of
expressing either the gain of an active
device (such as an amplifier) or the loss in
a passive device (such as an attenuator or
length of cable).
• Use logarithms-
• log (A x B) = log A + log B
• log (A/B) = log A - log B
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• Invented a unit of gain measurement
called a "Bel," named after Alexander
Graham Bell.
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• log 275 = 2.4393326 and
• log 55 = 1.7403626,
15,125
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Linearity
• Amplifier follows a relationship.--- linear
amplifier
• vo(t) = A vi(t)
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THD
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Amplifier Power Supplies
• Important part of the circuit
PL
100
Pdc
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Classes of amplifiers
• Class A----ηmax = 25 %
• Class B (~70%)
• Class AB (~70%)
• Class C (~80%)
• Class D (~100%)
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Amplifier Classes represent the amount of the output signal
which varies within the amplifier circuit over one cycle of
operation when excited by a sinusoidal input signal.
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Poles, Zeros and Bode Plots
Characterization:
K ( s z1 )( s z 2 ) ... ( s z m )
G(s)
s ( s p1 )( s p2 ) ... ( s pn )
s s s
( 1)( 1) ... ( 1)
K z1 z 2 z m z1 z2 zm
G(s)
p1 p2 pn s ( s 1)( s 1) ... ( s 1)
p1 p2 pn
K z1 z 2 z m
KB
p1 p2 pn
( z1s 1)( z 2 s 1) ... ( zm s 1)
G(s) K B
s ( p1s 1)( p 2 s 1) ... ( pn s 1)
(Time Constant Form.)
Characterization:
Considering the transfer function in the time constant form.
we have 4 different types of terms in the time constant form,
these are:
1 1
KB , , , (s / z 1)
s ( s / p 1)
Expressing the transfer function dB:
j
KB ( 1)
G ( jw) z
j
(j )( 1)
0 p
20 log | G( j ) |
j j
20 log K B 20 log | ( 1) | 20 log | j | 20 log | 1|
z o p
Mechanics: We have 4 distinct terms to consider:
wlg
1 1 1 1 1 1
dB Mag
Phase
(deg)
wlg
(rad/sec)
Frequency response plots
w 1 jw 1
j w 1 jw
wo j wo 1
wo wo
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K constant
Gain in dB
Log w
Ө= 0
Log w
jw/wo
Gain in dB
20 dB/ dec
wo
Log w
Ө= 90
Log w
-j w/wo = 1/ [jw/wo]–
, pole at the origin, jw/w
w0=1 o
Gain in dB
20 dB/ dec
Log w
wo rad./ sec
Log w
Ө= -90
1+ j (w/wo)
Gain in dB
Corner plot
20 dB/ dec
wo
Log w
Corner frequency
Ө
90
45
Ө= tan-1 (w/wo)
0.1 wo Log w
~10 wo
Magnitude and phase
jw
1
wo
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1 / [1+ j (w/wo)]
Gain in dB
wo
Log w
20 dB/ dec
Ө
Ө= -tan-1 (w/wo)
~0.1 wo
Log w
-45
-90
~10 wo
Using Matlab For Frequency Response
Instruction: We can use Matlab to run the frequency response for the
previous example. We place the transfer function in the
form:
5000 ( s 10) [ 5000 s 50000 ]
( s 1) ( s 500) [ s 2 501s 500]
Instruction: We can use Matlab to run the frequency response for the
previous example. We place the transfer function in the
form:
5000 ( s 10) [ 5000 s 50000 ]
( s 1) ( s 500) [ s 2 501s 500]
From: U(1)
40
30
20
Phase (deg); Magnitude (dB)
10
-10
1 10 100 500
0
-20
-40
To: Y(1)
-60
100(1 jw / 10)
Bode for: G( jw)
-80 (1 jw)(1 jw / 500)
-100
10-1 100 101 102 103 104
Frequency (rad/sec)
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Amplifier circuit models-analysis tools
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Z parameter model
+ + +
vi Ri vo
Avvi
- -
-
ii io
+ +
Ri A iv i Ro vo
- -
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Transconductance amplifier
io
+ +
vi Ri Ro vo
Gmvi
- -
Short-Circuit Transconductance
Gm = io/vi |vo=0
Unit (A/V)
Ideal conditions Ri = ; R0 =
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Transresistance amplifier
ii Ro
+
Ri vo
Rmii
-
Open-Circuit Transresistence
Rm = vo/ii |io=0
Unit (V/A)
Ideal conditions Ri = 0 ; R0 = 0
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Relations between parameters
Av0 = GmRo
Av0 = Rm/Ri
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BJT
• The bipolar junction transistor, unlike other transistors, is
usually not a symmetrical device. This means that
interchanging the collector and the emitter makes the transistor
leave the forward active mode and start to operate in reverse
mode.
• Because the transistor's internal structure is usually optimized
for forward-mode operation, interchanging the collector and the
emitter makes the values of α and β in reverse operation much
smaller than those in forward operation; often the α of the
reverse mode is lower than 0.5.
• The lack of symmetry is primarily due to the doping ratios of the
emitter and the collector.
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• The emitter is heavily doped, while the collector is lightly doped,
allowing a large reverse bias voltage to be applied before the
collector–base junction breaks down.
• The collector–base junction is reverse biased in normal
operation. The reason the emitter is heavily doped is to
increase the emitter injection efficiency: the ratio of carriers
injected by the emitter to those injected by the base. For high
current gain, most of the carriers injected into the emitter–base
junction must come from the emitter.
• The low-performance "lateral" bipolar transistors sometimes
used in CMOS processes are sometimes designed
symmetrically, that is, with no difference between forward and
backward operation.
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• The area of collector layer is largest. So it can dissipate
heat quickly. IT is normally in direct contact with the
metal case of the transistor, or a metal mounting pad,
which may then be bolted or clipped directly on to a
heat-sink.
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• The collector needs to be lightly doped so that the collector-base junction
will have a high breakdown voltage. This translates into a high allowable
collector power supply voltage. Small signal silicon transistors have a 60-80
voltage transistors.
• The collector also needs to be heavily doped to minimize ohmic losses if the
met by doping the collector more heavily at the metallic contact area. The
collector near the base is lightly doped as compared with the emitter. The
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