6T

SRAM
BY DEEPIKA K
JOURAL PAPER BY

 Abhishek Agal, Pardeep, Bal Krishan

 (Electronics Engineering Department, YMCA University of science &
technology, Faridabad) (A.P., Electronics Engineering Department, YMCA
University of science & technology, Faridabad)
INTRODUCTION

 6T static random-access memory is a type of semiconductor memory that uses

bistable latching circuitry to store each bit. The term static differentiates it
from dynamic RAM which must be periodically refreshed. SRAM exhibits data
remembrance, but is still volatile in conventional sense, that data is
eventually lost when memory is not powered.
CIRCUIT DIAGRAM

P1,P2-PMOS
N1,N2-NMOS
N3,N4-NMOS
Standby Mode

In standby mode word line is not asserted (word line=0), so pass transistors N3
and N4 which connect 6t cell from bit lines are turned off. It means that cell
cannot be accessed. The two cross coupled inverters formed by N1-N2 will
continue to feed back each other as long as they are connected to the supply,
and data will hold in the latch.
Read Mode

In read mode word line is asserted (word line=1), Word line enables both the
access transistor which will connect cell from the bit lines. Now values stored in
nodes (node a and b) are transferred to the bit lines. Assume that 1 is stored at
node a so bit line bar will discharge through the driver transistor (N1) and the bit
line will be pull up through the Load transistors (P1) toward VDD, a logical 1.
Design of SRAM cell requires read stability (do not disturb data when reading).
Write Mode

 Consider the memory bits consists of Q=0 and Q_B=1. Initially word line is high
and hence write operation can be performed. In the write operation bit and
bit are input lines. As we have control on the bit lines, initially make the
bit_b connected to ground so that we can have the voltage difference
between Q_B and bit_b. To write 1 into the SRAM cell, D2 must be stronger
than P2,this can be achieved by changing the aspect ratio of the transistors.
Hence Q will be 1. Initially Q=0 after the operation Q=1, hence we write
successfully into the memory.
CONCLUSION

 For power constrained projects like space exploration and satellites the SRAM
cell which consumes minimum power should be used while for very fast
processing devices the SRAM cell which has minimum time delay should be
used. The SRAM cell which has maximum SNM can be used in the device which
works in noisy environment. The design of SRAM cell can be optimized by
tradeoff between various performance parameters. New design is not
introduced within the project. In future we will propose new SRAM cell design
or schematic, which decreases read/write delay, consumes less power.
REFERENCES

 Ajay Kumar Dadoria, Arjun Singh Yadav, C.M Roy, “Comparative Analysis Of
Variable N-T Sram Cells” International Journal of Advanced Research in
Computer Science and Software Engineering.
 Seevinck, F. J. List, J. Lohstroh, “Static-Noise Margin Analysis of MOS SRAM
Cells” IEEE J. Solid-State Circuits, vol. SC-22, pp. 748-754, Oct. 1987.
 Sapna singh, Neha Arora, Meenkshi Suthar,
THANK YOU