Bipolar Junction Transistor

(BJT)
 The Unbiased BJT
• 3 doped Regions of npn-BJT
– Emitter; n type
– Base; p type
– Collector; n type

• 3 doped Regions of pnp-BJT

– Emitter; p type
– Base; n type
– Collector; p type Emitter

npn-BJT
 The Unbiased BJT
• Doping levels
– Emitter; heavily doped
– Base; lightly doped
– Collector; intermediate level

• Physical Dimensions
– Cross Sectional area is almost same
– Thickness
• Emitter; intermediate
Emitter
• Base; very thin
• Collector; longest
 The Unbiased BJT
• Formation of Two back to back Diodes
– Emitter-Base Diode [emitter-diode]
– Collector-Base Diode [collector-diode]
• Two Depletion layers are formed
Depletion
• Barrier potential is approximately Layer

– 0.7 v across each diode for silicon

Depletion
– 0.3 v across each diode for germanium Layer
 The Biased BJT
• Dc Bias
– VBB forward-bias the emitter-diode
– VCC reverse-bias the collector-diode
• Emitter Electrons:
– VBB forward-bias the emitter-diode, forcing the free electrons in Emitter-region
to enter into Base-region
– Thus free electrons are ‘Emitted’ (injected) by the Emitter into Base
– This flow of charge constitute ‘emitter-current’
 The Biased BJT
• Base Electrons:
– If VBB > 0.7v, Emitter electrons will enter Base
– Base passes most electrons to Collector; WHY?
• Base is lightly doped, fewer holes available for recombination; life time of free electrons in
base is long
• Base is very thin [physically], free electrons reach base-collector junction without
recombining with the holes
• Almost all free electrons in base region, reach base-collector junction
• Only a few free electrons recombine with the holes in base region:
– Then as valence electrons they flow through the RB (base-resister) to dc base-bias-source VBB
– Flow of these valence electrons form Base-region to VBB constitute Base-current

l
 The Biased BJT
• Collector Electrons:
– Almost all free electrons in base-region will enter Collector-region because
of the attraction of positive potential of dc-collector-bias VCC
– So the collector has ‘Collected’ almost all free electrons initially ‘Emitted’
by the emitter
– Once in collector-region, free electrons will flow through collector-resister
RC to dc-bias-source VCC,
– This flow of charge constitutes Collector-Current
 The Biased BJT
• Transistor Currents
– Schematic symbols
– Three currents Conventional flow
• Emitter current- IE (largest; sum of base and collector currents)
• Base current – IB (smallest; almost 1% of collector current)
• Collector current- IC (almost equal to emitter current)

Electron flow
IC

IB IE
 The Biased BJT
• Transistor Currents
– DC Alpha
• Ratio of dc collector current to dc emitter current:
• Dc alpha is slightly less than 1 (unity)
– DC Beta
• Ratio of dc collector current to dc base current:
• Dc beta is also known is ‘current-gain’
• Dc beta typically ranges from approximately 100 to 300

IC

IB IE
 The Biased BJT
• Problem-1:
– If IC = 10mA and IB= 40 µA
find Current-Gain??

Solution:

10mA
 dc 
40 A
 dc  250 IC

IB IE
 The Biased BJT
• Problem-2:
– If IB= 0.1mA and  dc  175
find IC ?

Solution:

I C  175  0.1mA
I C  17.5 mA
IC

IB IE
 The Biased BJT
• Problem-3:
– If IC= 2 mA and  dc  135
find IB ?

Solution:

2mA
IB 
135
I B  14.8 A IC

IB IE
 The Common Emitter Connection
• Common Emitter
– Two circuit loops
• Base-loop
– VBB forward biases the emitter diode
– RB current limiting resistor
– IB can be changed by changing VBB and/or RB
– Change in IB causes change in IC
– BASE CURRENT CONTROLS COLLECTOR
CURRENT

IC

IB IE
 The Common Emitter Connection
• Common Emitter
– Two circuit loops
• Collector-loop
– VCC reverse biases the collector-diode through RC
– Collector must be more positive than base to
‘collect’ most of free electrons ‘emitted’ by the
emitter into base
– Resulting in a large collector current which is
controlled by a small base current

IC

IB IE
 Standard Notations
• Double Subscripts

• Single Subscripts
 The Base Curve
• Base-emitter diode is forward biased
• A graph between base current (IB) and VBE is
a diode-curve.
• Where IB is given as:
• VBE
– VBE= 0v (for 1st approximation)
– VBE= 0.7 v (for 2nd approximation)

IC

IB IE
 The Base Curve
• Problem-4
– Use 2nd approx to calculate:
1. Voltage across base resistor (RB)
2. Base current IB
3. Collector current IC

 dc  200

VBE  0.7v
VR  VBB  VBE  2v  0.7v  1.3v
B
RC
VBB  VBE 2v  0.7v
IB    13A RB
RB 100 k IC

I C   dc I B  200  13A  2.6mA VBB IB

VBE
IE VCC
 Collector Voltage and Power
• Transistor Power dissipation

• Power dissipation increases the junction temperature

• Maximum Power Rating PD(max) (datasheet) is important , if exceeded device
can burn out
< PD(max)

IC

IB IE
 The Collector Curves
• For given values of VBB and RB certain value of IB exists
• For a given IB, the response of IC to variations in VCE can be plotted
• This plot is called collector curves

• Three regions of Collector Curves

– Saturation Region
– Active OR Linear Region
– Breakdown Region

Saturation
Region

IC
Active Region
Breakdown IB IE
Region
 The Collector Curves
Regions of Operation
• Active Region OR Linear Region [VCE = approx 1v to VCE(max)]
– Emitter diode forward biased, Collector diode reverse biased as such VC > VBE (collector is
more positive than base)
– Collector Collects almost all electrons emitted by emitter
– No change in collector current in response to change in VCE
– Collector current IC controlled by small base current IB [ ]
– Ideally collector current is constant and the slop of graph is zero (ignoring reverse current)
– Transistors are operated in Active Region for voltage and current amplification Collector is more
positive than base

VC>0.7v

Active Region VB IC

Breakdown
Region IB IE
=0.7v

VCE(max)
 The Collector Curves
Regions of Operation
• Active Region OR Linear Region [VCE = approx 1v to VCE(max)]
– Ideally collector current is constant (ignoring reverse current)
– In fact when we consider the affect of Reverse current then the slop of graph become slightly
greater than zero.
– Because Reverse current, caused by minority carriers, increases slightly with the increased Power
Dissipation (increased junction temperature)

E B C

IC = βdcIB + IR
 The Collector Curves
Regions of Operation
• Breakdown Region [VCE >VCE(max)]
– There is a specified limit for Maximum allowed VCE, given in datasheet as VCE(max)
– Beyond VCE(max) maximum power dissipation [PD(max) ] may be exceeded and transistor
enters its Breakdown Region of operation
– Transistor should not be operated in breakdown region because the device can be
damaged

Active Region IC

Breakdown
Region IB IE

VCE(max)
 The Collector Curves
Regions of Operation
• Saturation Region [VCE = 0v to almost 0.7v]
– Collector diode is insufficiently reversed biased because VC < VBE (almost forward biased)
– Collector current controlled by VCC and VCE
– Therefore collector current rises sharply in response to increase in VCE
– At some higher value of VCE (approx 0.75 and above) the Collector diode becomes
reverse biased (VC > VBE), and transistor enters into Active region of operation

Saturation
Region Collector is less
positive than base

VC<0.7v

Active Region IC

Breakdown
Region IB IE
=0.7v

VCE(max)
 The Collector Curves
• In Active Region IC is defined by IB [IC= βIB ]
• If base current is increased in steps the collector current would
increase in response
• This way a family of collector curves can be plotted
• Current gain of given circuit:

Saturation
Region

IC

IB IE

VCE(max)
 The Collector Curves
Cutoff Region
• If base loop is open, IB = 0A
• The collector current should be 0A as VBE < 0.7v
• This is called Cutoff Region
• Actually collector current does not reduce to 0A , rather a small Reverse Current
caused by flow of minority carriers keeps flowing in collector loop, this is called
collector-cutoff-current [ICEO given in data sheet]
• This can be ignored being very small
• In digital systems transistors are operated in Saturation and Cutoff Regions

Saturation
Region

IC

IB IE

VCE(max)
Problem: Calculate IB, IC , VCE , and PD
βdc=300

VCC 10V
V  VBE 10v  0.7v
I B  BB   9.3 A
RB 1 M

I C   dc I B  300  9.3A  2.79 mA 1MOhm 2kOhm

Rb Rc

VCE  VCC  I C RC  10v  (2.79mA  2k)  4.42v

PD  VCE I C  4.42v  2.79mA  12.3 mW

Problem: Calculate Current Gain of transistor for the circuit:
VCE , = 5.45v

VBB  VBE 10v  0.7v

IB    28.2 A
RB 330 k VCC 10V

VCC  VCE  VR C Rc

VR  VCC  VCE  10v  5.45v  4.55v

C
330kOhm
Rb
470 Ohm

VR 4.55v
IC  C
  9.68mA
RC 470
I C 9.68mA
 dc    343
IB 28.2A
 Transistor Approximations
• Ideal Approximation
– For rough approximation of base current and
other parameters
– For simple trouble shooting
– Base Loop:
• VBE = 0 V
• IB determined by VBB and RB only:
IB = VBB / RB

• Equivalent Circuits
– Base Loop: A forward biased Ideal diode
– Collector Loop: A current source pumps a
current = βdcIB through collector resister
 Transistor Approximations
• 2nd Approximation
– For a good approximation of base current and
other parameters
– Base Loop:
• VBE = 0.7 V

• IB determined by VBB and RB only:

IB = (VBB -0.7v )/ RB

• Equivalent Circuits
– Base Loop: A forward biased real diode
– Collector Loop: A current source pumps a
current = βdcIB through collector resister
 Transistor Approximations
• Third Approximation
– Effect of bulk resistances of emitter diode
becomes important in high power transistor
applications because of large currents
– The voltage across emitter diodes may be close
to 1 volt because of effect of bulk resistance in
high power transistor applications
– Effect of bulk resistance of collector diode may
also be significant in some special designs
 Transistor Approximation
Problem: Calculate Collector-Emitter Voltage (VCE) using 1st and 2nd
approximations
Ideal Approximation:
• VBE= 0V
• IB = 15 V/ 470 kΩ = 31.9 µA
• IC = 100 x 31.9 µA = 3.19 mA RB
RC
470kohm
• VCE= 15 V – (3.19 mA x 3.6 kΩ) = 3.52 V 3.6kohm
• IE = 3.19 mA + 31.9 µA = 3.22 mA βdc = 100 15V

Second Approximation:
• VBE= 0.7 V
• IB = (15 V – 0.7 V)/ 470 kΩ = 30.4 µA
• IC = 100 x 30.4 µA = 3.04 mA
• VCE= 15 V – (3.04 mA x 3.6 kΩ) = 4.06 V
• IE = 3.04 mA + 30.4 µA = 3.07 mA
 Data Sheet - 2N3904
Maximum Ratings
• Reverse Breakdown Ratings (reverse breakdown voltages):
– Collector Base voltage (with emitter open): VCBO = 60 V

– Collector Emitter voltage (with base open): VCEO = 40 V

– Emitter Base voltage (with collector open): VEB = 6 V

 Data Sheet - 2N3904
Maximum Ratings
• Maximum Current Ratings
– Maximum dc collector current (if power ratings are not exceeded):
IC = 200 mAdc
 Data Sheet - 2N3904
Maximum Ratings
Maximum Power Dissipation ratings
– If transistor is fan-cooled or mounted on heat-sink and casing temperature (TC) is maintained at 25oC:
PD(max) = 1.5 W
– If transistor is not cooled and ambient temperature (TA) is at 25oC:
PD (max) = 625 mW
– De-rating Factor:
• If casing temperature of a cooled transistor exceeds 25oC, the power rating would de-rate with a factor of
12 mW/oC (example: TC= 26oC; PD(max) = 1.5 W – 1x12 mW = 1.488 W)

• If ambient temperature of a not-cooled transistor exceeds 25oC, the power rating would de-rate with a
factor of 5 mW/oC (example: TA= 26oC; PD(max) = 625 mW – 1x 5 mW = 620 mW)
Data Sheet - 2N3904
 Data Sheet - 2N3904
RC

Problem:
IC = 20 mA
• VCE = 10 V
• IC = 20 mA RB +
• TA= 25oC VCE = 10 V
VCC
2N3904 --
VBB
What is the power dissipation ?
• PD = IC VCE = 10 v x 20 mA = 200 mW

Is the power dissipation safe, if ambient

temperature is 25oC?
• PD(max) at 25oC = 625 mW
• Yes power dissipation of 200 mW is safe

Is the power dissipation safe if a safety factor of 2

is the design criteria?
• Maximum Power dissipation of 312 mW is allowed
under above safety criteria
• The design is well within the safety criteria at ambient
temperature of 25oC
 Data Sheet - 2N3904
RC

Problem:
IC = 20 mA
Is the power dissipation safe, if ambient temperature
rises to 100oC? RB +
• ∆T= 100oC -25oC =75oC VCE = 10 V
VCC
--
• Derating factor = 75oC x 5 mW/oC = 375 mW VBB 2N3904

• PD(max) at 100oC = 625 mW - 375 mW = 250 mW

Maximum power dissipation of transistor at ambient

temperature of 100oC = 250 mW
• Yes power dissipation of 200 mW is still safe

Is the power dissipation safe if a safety factor of 2 is

the design criteria?
• No, power dissipation of 200 mW is not safe, as with
above safety criteria a maximum power dissipation of 125
mW is allowed
• The design is not within the safety criteria at ambient
temperature of 100oC

Solution: change design to reduce power dissipation

Data Sheet - 2N3904
 Data Sheet - 2N3904
• DC Current Gain
– βdc= hFE
– hFE : hybrid_equivalent_circuit_model
Forward_dc_current_gain
common_Emitter_configuration

– Max dc current gain (βdc) is at IC = 10mA

– βdc is not constant it varies with the magnitude of IC