UNIT-I

BiCMOS Technology & Fabrication

Dr. Hari Kishore Kakarla

Associate Professor
Dept of ECE
KL University
 CONTENTS
1) Introduction
2) Characteristics of CMOS Technology
3) Characteristics of Bipolar Technology
4) Combine advantages in BiCMOS Technology
5) BiCMOS Fabrication
6) BiCMOS Integrated Circuits
7) Advantages of BiCMOS
8) Disadvantages of BiCMOS
9) Applications of BiCMOS
10) Comparison between CMOS and BiCMOS
11) BiCMOS Products
12) Conclusion
 INTRODUCTION
 The history of semiconductor devices started in 1930’s when
Lienfed and Heil first proposed the mosfet.
 Bipolar Technology was started in 1980’s.
 CMOS Technology was also started in mid 1980’s.
 Later in 1990 there was a cross over between bipolar and CMOS
Technology.
 In BiCMOS technology, both the MOS and bipolar device are
fabricated on the same chip .
 The objective of the BiCMOS is to combine bipolar and CMOS
so as to exploit the advantages of both the technlogies.
 Today BiCMOS has become one of the dominant technologies
used for high speed, low power and highly functional VLSI
circuits.
 The process step required for both CMOS and bipolar are similar
so the BiCMOS process has been enhanced and integrated into
the CMOS process without any additional steps.
 The primary approach to realize high performance BiCMOS
devices is the addition of bipolar process steps to a baseline
CMOS process.
 The BiCMOS gates could be used as an effective way of speeding
up the VLSI circuits.
 The applications of BiCMOS are vast.
 Advantages of bipolar and CMOS circuits can be retained in
BiCMOS chips.
 BiCMOS technology enables high performance integrated
circuits IC’s but increases process complexity.
 BiCMOS technology accomplishes both - improved speed over
CMOS and lower power dissipation than bipolar technology.
 The main drawback of BiCMOS technology is the higher costs
due to the added process complexity.
 This greater process complexity in BiCMOS results in a cost
increase compared to conventional CMOS technology.
 Characteristics of CMOS Technology
 Lower static power dissipation
 Higher noise margins
 Higher packing density
 High yield with large integrated complex functions
 High input impedance (low drive current)
 Scaleable threshold voltage
 High delay load sensitivity
 Low output drive current (issue when driving large capacitive loads)
 Low transconductance, where transconductance, gm  Vin
 Bi-directional capability (drain & source are interchangeable)
 A near ideal switching device
 Low gain
 Characteristics of Bipolar Technology
 Higher switching speed
 Higher current drive per unit area, higher gain
 Generally better noise performance and better high frequency
characteristics
 Improved I/O speed (particularly significant with the growing
importance of package limitations in high speed systems).
 high power dissipation
 lower input impedance (high drive current)
 low packing density
 low delay sensitivity to load
 High transconductance gm (gm  Vin)
 It is essentially unidirectional.
Combine advantages in BiCMOS Technology
 It follows that BiCMOS technology goes some way towards
combining the virtues of both CMOS and Bipolar technologies
 Improved speed over purely-CMOS technology
 Lower power dissipation than purely-bipolar technology(Lower
power consumption than bipolar)
 Flexible I/Os for high performance
 Improved current drive over CMOS
 Improved packing density over bipolar
 High input impedance
 Low output impedance
 High Gain and low noise
BiCMOS Fabrication
BiCMOS Integrated Circuits
 ADVANTAGES
 Improved speed over CMOS
 Improved current drive over CMOS
 Improved packing density over bipolar
 Lower power consumption than bipolar
 High input impedance
 Low output impedance
 High Gain and low noise
DISADVANTAGES
 Increased manufacturing process complexity
 higher cost
 Speed degradation due to scaling
 longer fabrication cycle time
BiCMOS process
 Bipolar process
+
Well
+
Gate Oxide & Poly
+
CMOS process
 APPLICATIONS OF BICMOS
 Full custom ICs
 ALU’s, Barrel Shifters
 SRAM, DRAM
 Microproessor, Controller
 Semi custom ICs
 Register, Flipflop ,Standard cells
 Adders, mixers, ADC, DAC
 Gate arrays
 Flash A/D Coverters
COMPARISON between BASIC CMOS & BiCMOS
1.Speed Comparison

3.Area Comparison
2.Delay Comparison
BiCMOS PRODUCTS
LITERATURE SURVEY

 BOOKS:
VLSI Basic Design by Douglas A. Pucknell and Kamran Eshraghian

 WEBSITES:
http://www.vlsihandbook.com
http://www.bicmosdesign.com
http://website.informer.com
http://www.freepatentsonline.com/6927460.html