Why 𝑮𝒂𝟐 𝑶𝟑 ?

• Beta Gallium Oxide (BGO) has emerged as a new disruptive power semiconductor
to compete with very-high to low-voltage power switching.
• 𝑮𝒂𝟐 𝑶𝟑 is a wide band gap material.
• Key role in improving electric vehicles, solar power, and other forms of renewable
energy
• Ga2O3 has a bandgap of 4.6 - 4.9 eV.
• Critical electric field strength of ~ 8 MV/cm.
• This makes Ga2O3 a better choice for making next-generation power devices.
• Suitable for High Frequency Device also.
• Besides, due to its wide bandgap and thermal stability, 𝑮𝒂𝟐 𝑶𝟑 -based devices are
also expected to be much less susceptible to high temperature and radiation.
• Hence, Ga2O3-electronics are also suitable for the extreme environment.
 Lattice Structure

𝑮𝒂𝟐 𝑶𝟑 Silicon
 Advantages over Silicon and other materials

• Mobility of 𝛽 − (𝐴𝑙𝑥 𝐺𝑎1 − 𝑥)2 𝑂3 /𝐺𝑎2 𝑂3 : 2790 𝑐𝑚2 /Vsec

• μ𝑛 of 𝑮𝒂𝟐 𝑶𝟑 : 100 𝑐𝑚2 /Vsec at 300 K.
• Saturation velocity : 2 × 107 cm/sec

• Bandgap energy : 4.8 eV

• Breakdown field : 8MV/cm
• critical field strength: 20 times more than silicon
Band Gap
Why 𝑮𝒂𝟐 𝑶𝟑 MOSFET over other?
 𝑮𝒂𝟐 𝑶𝟑 Devices used in which domain?

Possible potential applications are:

• Commercial power electronics.
• Nuclear facilities
• Space missions
• Defense
• Automotive
• Solar-blind photodetectors etc
• Semiconductor devices
• Optoelectronics
• Catalysis
• Gas Sensor
• Chemical sensors and many others
 Use of 𝑮𝒂𝟐 𝑶𝟑 in Nanotechnology

Low-dimensional 𝑮𝒂𝟐 𝑶𝟑 nanostructures such as:

• Nanowires, Nanobelts, nanorods, and nanosheets can be relatively easy produced by a variety of
techniques.
• Nanostructures exhibit different, and in many cases, superior physical properties when compared
to those For bulk material.
• Due to large surface to volume ratio, nanostructures have more surface states to interact with the
surroundings.
• Therefore, nanostructures have many potential applications in catalysis and chemical sensing.
• The abundance of defect gap states in nanostructures increases light absorption and changes
luminescence properties which can be beneficial in photochemical and phosphor applications.
• 𝑮𝒂𝟐 𝑶𝟑 can be used as an efficient host material for rare-earth and transition metal based
phosphors. Ferromagnetic doping of 𝑮𝒂𝟐 𝑶𝟑 has been demonstrated, which opens perspectives
for Ga2O3 applications in spintronic devices.
 MOSFET Operating Principal

gate: metal or heavily doped poly-Si

G
(bulk or body source IG=0 drain
substrate) B S D
ID=IS
y IS

metal
oxide

n+ n+
p
x

W
L
Flatbands! For this choice of materials, VGS<0
n+pn+ structure  ID ~ 0
gate
G
body source drain
B S - + D
VD=Vs

n++
oxide

n+ n+
p

W
L
Flatbands < VGS < VT (Includes VGS=0 here). n+-
depletion-n+ structure  ID ~ 0
gate
G
body source drain
B S - + D
VD=Vs
+++
n++
oxide

n+ n+
p

W
L
 VGS > VT
n+-n-n+ structure  inversion

gate
G
body source drain
B S - + D
VD=Vs
+++
+++
+++
n++
oxide
-----
n+ n+
p

W
L
 β−𝑮𝒂𝟐 𝑶𝟑 based FET

Fabrication process of top-gated Beta nanoFET with a field modulating plate:

(a) Pattering of the source and drain ohmic contacts to the exfoliated beta flake.
(b) Deposition of the Ni/Au top gate electrode.
(c) Deposition of the PECVD-SiO2 dielectric layer.
(d) Patterning of the field-modulating plate (Ti/Au).
𝑮𝒂𝟐 𝑶𝟑 MOSFET Results comparison
 Progress in 𝑮𝒂𝟐 𝑶𝟑 till now[1]

• 2" 𝑮𝒂𝟐 𝑶𝟑 substrates are already commercially available.

• The growth of 𝑮𝒂𝟐 𝑶𝟑 epitaxial films has been demonstrated by MBE and
MOCVD/MOVPE.
• Proof of concept prototypes of 𝑮𝒂𝟐 𝑶𝟑 transistors and Schottky diodes
have been demonstrated.
• Applied development of 𝑮𝒂𝟐 𝑶𝟑 as a perspective semiconductor stimulated
basic research aimed at understanding of fundamental material properties.
• Open issues such as p-type conductivity and realization of full potential of
𝑮𝒂𝟐 𝑶𝟑 material for device applications have to be addressed.
 References

[1] L.de Boisbaudran // Philos. Mag. Ser. 4(1875) 414

[2] R.Roy, V.G. Hill and E.F. Osborn // J. Amer. Chem. Soc. 74 (1952) 719

[3] S.Yoshioka, H.Hayashi, A.Kuwabara, F.Oba, K. Matsunaga and I.

Tanaka // J. Phys. Condens. Matter. 19 (2007) 346211

[4] Gallium Oxide: Properties and Applications – A Review S.I Stepanov,

V.I. Nikolaev, V. E. Bougrov and A.E. Romanov _

Rev.Adv.Mater.Sci.44(2016) 63-86