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LED
p n p
Electron n
Energy
Conduction Band
Fermi-level Wf Free electrons
------- i
Free holes + + + + + + Hole
Wg Energy
Valence Band
V
Potential
+ -
barrier
Forward bias
The original setup is that the Fermi level of the N and P regions
overlap and the energy required for the electron to move from
the N to the P regions or the holes to move from the P to N
region is too large and so no charge movement in zero bias.
When the diode is forward biased the two Fermi levels are
separated with a value proportional to the voltage applied (=eV)
and the barrier is now reduced as the voltage increased the
potential energy of the n-side and lowered that of the p-side.
Free electrons and holes will have sufficient energy to cross the
barrier between the two regions (enter into the depletion
region).
Optical Power
1 0 1
Signal LED
t
i 1
Input Current (Signal)
0
1
t
Modulation of an LED (cont.)
For analogue modulation a dc bias is required to keep the total
current in the forward direction at all times. Otherwise the
negative swing would shut off the diode (reverse bias).
Optical Power
Psp Optical Power
Pdc
Idc
0
i
Isp
I I dc I S sin( wt )
Beam Intensity
Intensity cos q
1.0 q
0.5
n p
0 60º 90 º q
Refractive Index
n
q||
q q
Junction
Drawbacks of LED
Large line width (30-40 nm)
Large beam width (Low coupling to
the fiber)
Low output power
Advantages
Robust
Linear