Microwave Amplifier Design: Microwave Transistor Amplifiers Analysis and Design, G. Gonzalez Microwave Amp. Design

Microwave Amplifier Design
Microwave Transistor Amplifiers Analysis and Design, G. Gonzalez Microwave Amp. Design
Power Gain Equation
Source Mismatch factor:
Load Mismatch factor:
Power Gain Equation
 Example:
 In this system
 Determine GA, GT, GP if:
 Calculate PL, PAVN, PIN, PAVS if:
 Calculate VSWRin, VSWRout
 Solution:
 .
 .
 .
Power Gain Equation
 Solution (cont.):
Using:
Using:
 .
 .
Stability Conditions
 Stability condition of an amplifier is very important.

 If an amplifier is not stable may be oscillated. equally:
 Stability can be determine by 1: [S], 2: matching networks 3: load

 Oscillation are possible when input or output port presents a negative resistance:
 For an unilateral device (S12=0), oscillation condition occurs when:
Because: Γin=S11, 𝛤out=S22
 Unconditionally Stability:
 Re{Zin}>0 & Re{Zout}>0 for all ZL & Zs or:
 1  3
 2  4
is true for passive ZL & Zs

For passive Zin & Zout is valid
 For a passive device, the real part of impedance is positive.

 Otherwise for non-passive devices, network is potentially unstable for some ZL & Zs
 Stability Circles: Where:

Using:
is center is radius |ΓL-𝐶 L|=𝑟L
For:
For:
Desired 𝜞L
for stability Attention:
 Stability Circles (cont.): Where:

 As a similar manner:
is radius
|Γs-𝐶 s|=𝑟s
is center
Desired 𝜞𝒔
for stability
 Unconditionally Stability:
Using:
Where:
Equivalent
Relation
is:
 Another Equivalent formula is:
 Another Equivalent formula is:
 Example:
 S parameters of a BJT, at 15V, 15mA, is listed in table.
 Draw stability circles. Using:
 Solution:
 At 500MHz:
 Stability circles:
 At 1GHz:
 At 2GHz:
 At 4GHz:
 Stability Circles:
 A potentially unstable transistor can be unconditionally

stable by a resistance or feedback.
 Example:
 S parameters of a BJT, at 800MHz:
 Solution:
 Using a series resistor in input:
 Other configuration:
 For input stability:
 For output stability:
 Adding resistance degrade gain, NF,

VSWR.
 Task-LN05-01: Delivery 91.01.21

 Calculate new [S] for four configuration.
 Show stability circle in ADS.
 Is it unconditionally stable?
Constant Gain Circles
 Unilaterally Case:
 Maximum of GTU occurs if:
 In this case:
 In unconditionally stable case:
 Γi that produce a constant gain Gi presents a constant gain circle.
 Normalized gain factor:

each value gi
generates a circle
 When Γi=S*ii , gain gi=1 & radius ri=0 as expected for Gi=Gmax
 Example:
 For given [S] of a BIJ at VCE=10V, Ic=30mA, f=1GHz
 Determine Optimum terminations.
 Determine GS,max, GL,max, GTU,max.
 Draw several constant gain circle.
 Design input matching for Gs=2dB
 Solution:
 Optimum terminations:
 Since
 We draw circles:
 In potentially unstable case:
 Example:
 For a FET having:
 Draw circle Gs=5dB & 3dB.
 Simultaneous conjugate match:
 To max GT:
Where:
 Solving Simultaneously these equations:
 Γs & ΓL can be obtained namely ΓMS & ΓML as:
 Minus sign is used for unconditionally stable.

Using:
 In this condition (Simultaneous conjugate match):
 Maximum stable gain is defined as GT,max when K=1:
 Example:
 Design a microwave amplifier using a GaAs FET to f=6GHz
with maximum transducer gain.
 Transistor at VDS=4V, IDS=0.5IDSS has [S]:
 Solution:
FET is unconditionally stable
FET is not unilateral
 Therefore:
Using:
 Example (cont.):
 Input Matching Network:
ΓMS
 Output Matching Network:
ΓML
 In this example matching is designed

for maximum of gain.
 For optimum noise figure (NF), the
design must be changed.
Operating Power Gain
 When S12≠0, operating power gain is used to design amplifier.

 Operating power gain is independent of source impedance.
 Unconditionally stable Case:
=
Where:
 In appendix G the values of ΓL to draw constant operating power gain circles is presented.
 The maximum of operating power gain occurs at:
 Solution for Unconditionally stable is:
 Example:
 Design a microwave amplifier using a GaAs FET to
f=6GHz with operating power gain Gp=9dB.
 [S] of transistor at Vds=4V, Ids=0.5IDSS :
 Solution:
 Circle of ΓL for 9dB gain is:

 Typical ΓL is located in A:
 Solution (cont.):
Using CH2:
 VSWRin=1 &
 Potentially stable bilateral case:
 Procedure for given Gp:

 1. Draw operating power circles and output stable circle.
 2. Select ΓL in power circle & stable region & not too close from stable circle.
 3. Determine:
 4. Draw input stable circle & determine if Γs=Γ*in lies in input stable region.
 5. If Γs=Γ*in is not in stable region or is in stable region but is very close to stable
circle, the value Γs or GP can be changed.
 Example:
 [S] parameter a microwave amplifier using a GaAs FET for f=8GHz, VDS=5V,
IDS=0.5IDSS, IDSS=10mA is:
Input stable circle:
 Solution: Output stable circle:
 FET is potentially stable in f=8GHz with:
 Selected arbitrary ΓL in point A:
 For conjugate match in input:

Using:
 Using Γs:
 Output is significantly mismatch.

 To improve VSWR the locate Γs & ΓL must be changed.
 Other circles:
Available Power Gain
 Unconditionally stable Case (S12≠0):
 Very similar previous section, available power gain can be obtained as:
Where:
 For Potentially Stable Case (S12≠0):

 1. For given GA, draw circles & input stability circle.
 2. Select a value of Γs in stable region and not too close stability circle.
 3. Calculate Γout & determine a conjugate match in output if feasible.
 4. If ΓL=Γ*out is not in stable region or in stable region but is very close to it, ΓL or GA can
be changed to arbitrary values.
 A question:
 Why ΓL should not be close to stable circle?
VSWR Circles
 Input VSWR: Proof this

using CH2
 For constant VSWR (constant Γa), Γs circles should be plotted:
Where:
 To VSWR=1: or =
 Therefore we have:
 By a similar way:
Where:
ΓL
Γout Γb
VSWR Circles
 Example:
 [S] GaAs-FET at 12GHz, VDS=3.5V, IDS=25mA are:
 Determine GA,max and draw GA= GA,max-1 dB circle.
 Select several values Γs in this circle.
 For each Γs value, determine ΓL in (VSWR)out =1.5 circles and draw this circles.
 Select several values ΓL on (VSWR)out =1.5 circle. For each ΓL value, determine (VSWR)in.
 Solution:
 This example can be used to design low noise amplifiers (LNA) outlined in CH4.
 For LNA we make trade-offs between Gain, NF, VSWR.
is unconditionally stable
 Constant circle for:
VSWR Circles
 Γs values on circle:
 Four values presented in circle are:
 For output VSWR=1.5:
 Four circles are:
VSWR Circles
 Plotting four output VSWR=1.5:
 In addition for values of

VSWR=1 is plotted:
VSWR Circles
 Value ΓL in VSWR=1.5 is
given as:
 Results are listed in table as:

 Do problem 3.30.
 Plots circles in ADS.
VSWR Circles
 Mapping:
 ΓL & Γin as well as Γs & Γout are related by bilinear transformation as:
 Therefore circles in Γin plane map into circles in ΓL plane.

 Also, circles in Γs plane map into circles in Γout plane.
Where:
 As presented in:
 Circles of ΓL :
 ΓL in Γs=Γ*in plane can be presented as:

 As a similar way, Circles of Γs : Where:
 Γs in ΓL=Γ*out plane can be presented as:
 Example:
 [S] GaAs-FET at 4GHz, VDS=2V, IDS=25mA are:
 Show GP, VSWR, stability.
VSWR Circles
 Solution: is potentially unstable
 We select desired value of GP under GMSG as:
 Constant gain circles:
 In this circle, we select locations of:

For 2 points:
&
VSWR Circles
 Other circle:
DC Bias Networks
 Two major biasing network is categorized as:

 BJT Bias Networks
 GaAs FET Bias Networks
 BJT Bias Networks:

 At microwave frequency ICBO, hFE, VBE are affected by
temperature.
 Typical reverse current:
 Stability factors is defined as:
DC Bias Networks
 Two grounded emitter DC bias networks are:
 Example:
 Design the DC bias of (b) type.
 Assume that:
 Solution:
(a) (b)
 Assuming Vbb=2 & IBB=1mA:
DC Bias Networks
 At lower frequency a bypassed emitter resistor can

be used for better stability.
Where:
 Stability factors are:
 A active DC bias network as shown:
 Q1 stabilize operating point RF transistor as:
 If IC2 tends to increase, I3 increases and then

VBE,Q1 drops.
 Therefore IB2 & IC2 drop and stabilized.
DC Bias Networks
 Selection DC point depends on the application.
 Point A: for LNA & low power applications.
 Point B: for LNA & high gains.
 Point C: for high output power in class A
 Point D: for higher output power and high
efficiency in AB & B Class.
 Example:
 If HFE=100, VBE=0.7V, VCC=15V,
 1. design a DC bias for previous figure to have
VCE=8V & IC=2mA.
 2. use active bias network and repeat solution.
 Solution:
 1. Dropping 10%VCC on RE:
 2. I3=IC1+IC2 & IC1=IC2 :
DC Bias Networks Applications:
 GaAs FET Bias Networks:

 Can be bias using unipolar or bipolar networks as:
is very
Apply VG then VD important Apply VG then VD Apply VG then VD
Applications:
DC Bias Networks
 Power supply sequencer:
DC Bias Networks
 Selection DC point depends on the

application of FET.
 Point A: for LNA & low power
applications.
 Point B: for LNA & high gains.
 Point C: for high output power in class A
 Point D: for higher output power and
high efficiency in AB & B Class.
 Active Bias Network:

 Do problems
 3.3
 3.7
 3.12
 3.17
 3.22
 3.37 for a LNA biasing design

Microwave Amplifier Design: Microwave Transistor Amplifiers Analysis and Design, G. Gonzalez Microwave Amp. Design

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Microwave Amplifier Design

Source Mismatch factor:

Load Mismatch factor:

 Calculate PL, PAVN, PIN, PAVS if:

 Calculate VSWRin, VSWRout

 Stability condition of an amplifier is very important.

 Stability can be determine by 1: [S], 2: matching networks 3: load

Because: Γin=S11, 𝛤out=S22

is true for passive ZL & Zs

 For a passive device, the real part of impedance is positive.

 Stability Circles: Where:

is center is radius |ΓL-𝐶 L|=𝑟L

 Stability Circles (cont.): Where:

 Another Equivalent formula is:

 Another Equivalent formula is:

 A potentially unstable transistor can be unconditionally

 Using a series resistor in input:

 For output stability:

 Adding resistance degrade gain, NF,

 Task-LN05-01: Delivery 91.01.21

 Maximum of GTU occurs if:

 In unconditionally stable case:

 Γi that produce a constant gain Gi presents a constant gain circle.

 Normalized gain factor:

 In potentially unstable case:

 Draw circle Gs=5dB & 3dB.

 Minus sign is used for unconditionally stable.

 In this condition (Simultaneous conjugate match):

FET is unconditionally stable

FET is not unilateral

 In this example matching is designed

 When S12≠0, operating power gain is used to design amplifier.

 The maximum of operating power gain occurs at:

 Solution for Unconditionally stable is:

 Circle of ΓL for 9dB gain is:

 Potentially stable bilateral case:

 Procedure for given Gp:

 Solution: Output stable circle:

 FET is potentially stable in f=8GHz with:

 For conjugate match in input:

 Output is significantly mismatch.

 For Potentially Stable Case (S12≠0):

 Input VSWR: Proof this

 For constant VSWR (constant Γa), Γs circles should be plotted:

 Constant circle for:

 Four values presented in circle are:

 For output VSWR=1.5:

 Four circles are:

 In addition for values of

 Results are listed in table as:

 Task-LN05-02: Delivery 91.01.28

 Therefore circles in Γin plane map into circles in ΓL plane.

 ΓL in Γs=Γ*in plane can be presented as:

 Γs in ΓL=Γ*out plane can be presented as:

 We select desired value of GP under GMSG as:

 Constant gain circles:

 In this circle, we select locations of:

 Two major biasing network is categorized as:

 BJT Bias Networks:

 Stability factors is defined as:

 At lower frequency a bypassed emitter resistor can

 Stability factors are: