IC FABRICATION STEPS

 Manufacturing process in which an item is made

(fabricated) from raw or semi-finished materials
instead of being assembled from ready-made
components or parts.
 Wafer fabrication is a procedure composed of many
repeated sequential processes to produce complete
electrical circuits from components level.
 More Availability.
 High Thermal stability.
 Stable Transfer gain.
 High Immune to noise.
1.WAFER PREPARATION
2.EPITAXIAL GROWTH
3.OXIDATION
4.PHOTO LITHOGRAPHY
5.DIFFUSION OR ION IMPLANTATION
6.ELECTROLYSATION
7.GLASSING
9.METALISATION
10.PROBE TESTING
 Sand to silicon
SIO+CO SI+CO, SIO2+C SI+CO2
 Obtained silicon is called as metallurgical silicon.
 This undergo siemens process to obtain pure silicon.
SI+3HCL SICL3+3H
 Stored in cool cabins for 30-45 days.

SICL3+3H SI+3HCL
Resultant will have improved conductivity characteristics
 Wafer sizing ranges from
25mm-450mm diameter
and .2mm- 1mm.
 It acts as diffusion mask permitting selective
diffusion into silicon.
 We required a insulator for preventing electrical
conductivity between layers.
 No other semiconductor oxide has a native oxide
which is able to achieve all properties of sio2.
 High electronic resistivity(10^14-16 ohm/cm),
suitable as dielectric film.
 Band gap(around 3ev), melting point(1700’c)
 Optical property.
 In order prepare SIO2 we prepare dilute SI.
SICL4+2H2 SI(dilute)+4HCL
 Now proceed to oxidation
Dry oxidation
SI+02 SIO2
Wet oxidation
SI+H20 SIO2+2H2
Photo mask preparation
Photo resistive layer preparation
+ve photo resistive layer
-ve photo resistive layer
• Diffusion and Ion Implantation are the methods by
which impurity is introduced into silicon to change its
resistivity.
• In diffusion the dopant atoms are moving from a
highly concentrated region to a low concentrated
region.
• In implant, the dopant molecules are implanted
vertically into the surface of the silicon by a high-
energy ion beam.
 The process of connecting electrodes to the
external semiconductor is called
electrolysation.
 The process of encapsulation of total substrate
with unbreakable glass is called glassing
• The process of encapsulation of the substrate with a
metal is called metallization.

• Verification of interconnects of components is called

probe testing.
 IC fabrication bought a drastic change in
electronic world.
 IC fabrication complexity increases based on
design.