MOSFET AND IT’S

CHARACTERISTICS
Presented by:
Himanshu Mathur
Adwait Rahatgaonkar
Jolly Mishra
Topics to be covered:-
● Introduction to MOSFET. ( Comparison with BJT)
● When & Where (History of Mosfet)
● What is Field Effect?
● Types Of MOSFET-Depletion & Enhancement (n-mos)
● Working Of Enhancement Type MOSFET.
● Gradual Channel Approximation.
● V-I Characteristics & Transfer Characteristics
● Current Equation and the Diagrams.
● Channel Length Modulation & Substrate Bias Effect.
What is MOSFET?

● MOSFET stands for:-

Metal Oxide Semiconductor Field
Effect Transistor.
● It is the basic element in the most
modern electronic component.
● Applications:-
1. Fundamental to Integrated Circuits (IC’s) for
memory chips and microprocessors.
2. Used as power devices in power supplies ,RF
amplifier,audio amplifier,automotive
electronics etc.
● In short:-
“Groundbreaking invention that transformed
life and culture around the world.”
 What do we mean by Field Effect?

PRINCIPLE USED:-
The field produced by the gate in a
way that makes the channel conduct
more or less.

1. A electric "field" is produced

whenever and wherever there
is a voltage difference.
2. Due to this Electric field the
charge carriers present in the
substrate are directed towards
the gate terminal.
3. It further helps in the formation
of channel.
Comparison with BJT:-
BJT MOSFET
Current Controlled device. Voltage-controlled device.

Bipolar device. (Flow of both majority and Unipolar Device. (Flow of only the majority
minority charge carriers.) charge carriers.)

Not a Symmetrical device. Symmetrical Device(Source & Drain are

interchangable.)

Low Input and output impedance. Very high Input Impedance and a high input
impedance.

Medium noise generation. Low noise generation.

Current equation and I-V characteristics
● I=Q*V

Where Q=charge /length and V=velocity

● To form the channel Vgs>Vth

● Q=CV
● Q= W*Cox*(Vgs-Vth)

Where Q=charge/length, w=width of MOS Cox=capacitance/area, Vgs-

Vth=overdrive voltage
Gradual channel Approximation
● To simplify the modeling of the MOSFET the 2D model is considered as 1D

Ex<<Ey Ex

● This is only applicable for long channel devices only Ey

● Assuming the thickness of channel is very small so it’s area will only be
considered as W*L
Continued…...
● Now apply the Drain voltage

0.1 0.2………………………………… …0.9 1V

S e- e- D

● Q(x)=W*Cox*(Vgs-Vth-V(y))

Where Q(x)=charge density V(x)=voltage across the channel

● I=(-)WCox(Vgs-Vth-V(y))v
● v=uE; where u=mobility and E=-dv/dx
● Here at source pt V(0) =0 volts and V(L) or V(x)=Vds
continued…..

● If we plot

This equation we get set of inverted parabolas with respective to each Vgs

● As we differentiate this eq to get the maxima we will get at Vds=Vgs-Vth

● After this value the neg Vds^2 value increases rapidly and each curve exhibits a
negative differential behaviour which is not observed in actual MOSFET
current-voltage measurements
● After the Maxima the current remain almost constant ie we say the MOSFET is
in saturation,the current is given by the Saturation or the Id max equation
Saturation Region
● When the current Ids reaches it’s maximum point, if Vds is increased beyond that, then
current Ids remains constant and no variation is observed. This is known as Saturation
region.
● Thus Vds loses control over Ids in this region. Mathematically this can be shown by
differentiating the Triode region Ids quation. We obtain the maximum point at Vds =
Vgs- Vth.
● This saturation drain current level can be found simply by substituting Vds=Vgs-Vth

● Thus, the drain current Id becomes a function only of the gate-to-source voltage Vgs.
● Here MOSFET is considered as const.current source.
Channel length modulation
● Though ideally the current Ids
beyond saturation is considered
to be constant. But practically, it is
not the scenario.
● If Vds is increased beyond the
Vds(sat), the current Ids increases
linearly increases with Vds as
shown in the figure.
● Thus the graph has a non-zero
slope. This is attributed as channel
length modulation effect.
Channel length modulation (contd)
● This effect can be included in saturation current as :

● Lamba is channel length modulation coefficient.

Body bias effect
● The above Ids current equations are derived under the assumption that the
voltage between substrate and source is zero. The threshold voltage Vt is also
considered neglecting the substrate voltage.
● Practically it is not the case . The substrate voltage effect has to be considered
in the threshold voltage.
Body bias effect (Contd)
● Thus the current Ids is modified as:
Current equations: