POWER DIODE

Reverse Recovery Charge, Current

and Time
POWER DIODE REVERSE RECOVERY
CHARACTERISTICS
■ A diode’s reverse recovery characteristics are
quantified by four parameters: the reverse recovery
time (tRR), the reverse recovery current (IRR), the
reverse recovery charge (QRR) and the softness factor.
■ Reverse Recovery Time (tRR) - the finite amount of time
required to clear a power diode of charge carriers so
that it can block the reverse voltage during transition
from conduction to reversed biased condition.
POWER DIODE REVERSE RECOVERY
CHARACTERISTICS
■ Reverse Recovery Charge (QRR) - direct measure of power
diode’s stored charge; either from the barrier junction
capacitance of Schottky devices or the minority carriers
that flow within the cathode and drift region of PN-junction-
based devices. All stored charge must be removed so that
the depletion region can become big enough to block the
reverse voltage. In order to block a high reverse voltage
(600 V), those diodes require a wide drift region. The wider
the drift region, the more minority charge carriers it can
contain during forward conduction.
POWER DIODE REVERSE RECOVERY
CHARACTERISTICS
■ Reverse Recovery Current (IRR) - When the voltage
across the power diode is suddenly reversed, an
initial current flow will occur in the reverse direction.
■ Softness Factor - the ratio of the two parts of the reverse
recovery current: stored charge removal and the return to
zero current. Softness is calculated by dividing the time
required to remove the stored charge carriers from the
diode (ta) into the time it takes for the resultant reverse
current to fall from its peak negative value (tb).
POWER DIODE REVERSE RECOVERY
CHARACTERISTICS
FAST RECOVERY DIODE

■ The major problem with the conventional diode is

that they possess quite high recovery time. Due
to which the rectification of high frequency is not
possible with a conventional diode. Fast Recovery
Diode is a semiconductor device which
possesses short reverse recovery time for
rectification purpose at high frequency.
CONSTRUCTION OF FAST RECOVERY
DIODE

■ The major difference in construction between fast

recovery diodes and conventional diodes is the
presence of recombination centres. And with the
addition of Gold (Au) in the semiconductor material,
the recovery time becomes less (about 0.1ns). The
semiconductor material used in these diodes
is Gallium Arsenide (GaAs). On the other hand, the
value of recovery time in case of silicon is 1-5 ns.
FAST RECOVERY DIODE OPERATION

■ The addition of Gold (Au) in Gallium Arsenide (GaAs)increases the

density of recombination centres in the semiconductor material. Due to
which the lifetime of charge carriers reduces and they recombine
quickly and the recovery time reduces.
ADVANTAGES OF FAST RECOVERY DIODE:
■ Ultrahigh Switching Speed
■ Low reverse recovery time
■ Improved efficiency as compared to conventional diodes.
■ Reduced loss

DISADVANTAGE: It possesses high reverse current when

recombination centres are increases by adding Gold(Au).
APPLICATION OF FAST RECOVERY DIODE:
■ Rectifier: These diodes are used in rectifier especially for
high-frequency rectification.
■ Industrial and commercial areas: They are used in
electronics circuits in various industries and automobile
sector.
■ Radio signal detector: They are used in radio signal
detectors to detect high-frequency RF waves.
■ Analog and Digital communication Circuits: In analogue
and digital communication circuit these diodes are
extensively used for rectification and modulation purpose.