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TUNNELING (SET)
MOHD RASHID SIDDIQUI
B.Tech.-Mechanical
16MEB258
WHY SET?
• Currently available transistors: use total
of approx. 100,000 electrons to send
only one bit of information.
𝑉𝑠𝑑
OHM’S LAW: 𝐼=
𝑅
Vsd = Applied source-drain voltage Vg = Applied gate voltage that provides
a control over resistance R of the
R = Resistance arise from the process of active region of the quantum dot,
electron tunnelling from source to & consequently helps to regulate
quantum dot & from quantum-dot to the current flow
drain
■ For large or macroscopic dimensions the current flow is continuous, & it is governed
by Ohm’s Law.
■ This case is similar to voltage-controlled or field-effect-controlled transistor or FET.
■ Here we want the discrete behaviour, i.e., the passage of
electrons one-by-one, through nanostructures based on
certain circuitry as shown in the figure.
■ For a FET-type nanostructure, the dimensions of the
components (i.e. the attached electrodes & the quantum dot)
are comparable in size.
■ For disk & spherical shaped dots of radius r, the capacitance C is given by
Disk: 𝐶 = 8𝜀𝑜 𝜀 𝑟
𝜀𝑜
Sphere: 𝐶 = 4π𝜀𝑜 𝜀 𝑟
𝜀𝑜
where,
𝜀
= Dimensionless dielectric constant of the semiconducting material
𝜀𝑜
that forms the quantum dot
𝜀𝑜 = Dielectric constant of free space = 8.8542 x 10-12 F/m
■ For a typical GaAs dot material of spherical shape:
𝜀
= 13.2
𝜀𝑜