ECE 342

Solid-State Devices & Circuits

10. MOS Amplifiers

Jose E. Schutt-Aine
Electrical & Computer Engineering
University of Illinois
jschutt@emlab.uiuc.edu

ECE 342 – Jose Schutt-Aine 1

 Biasing of MOS Transistors

• Bias Characteristics
– Operation in saturation region
– Stable and predictable drain current

1 W
I D  nCox VGS  VT 
2

2 L

ECE 342 – Jose Schutt-Aine 2

Two-Supply MOS Bias

1 W
I D  nCox VGS  VT 
2

2 L

RG provides DC ground at gate and high input

resistance to signal source.

ECE 342 – Jose Schutt-Aine 3

Single-Supply MOS Bias

– Choose R1 and R2 to fix VG

– Choose RS and R2 to fix VS
– VGS determines ID
– Choose RD to fix VD

ECE 342 – Jose Schutt-Aine 4

Bias with Feedback Resistor

VGS  VDS  VDD  RD I D

VDD  VGS  RD I D

Negative feedback (degeneration) provided by RG

ECE 342 – Jose Schutt-Aine 5

Common Source MOSFET Amplifier

Bias is to keep MOS in saturation region

ECE 342 – Jose Schutt-Aine 6

 Common Source MOSFET Amplifier
Small-Signal Equivalent Circuit for MOS (device only)

1 'W
I D  kn VGS  VT 
2

2 L Which leads to
I D 2I D
gm 
VGS

Veff
g m  2kn' W / L ID
VGS VGSQ

where VGS  VT  Veff gm is proportional to  W /L

ECE 342 – Jose Schutt-Aine 7

 MOSFET Output Impedance
To calculate rds, account for l

VDS 1 1
rds   
I D VGS VGSQ
W
l Cox VGS  VT 
2 l I DP
2L

1 'W
 kn VGS  VT 
2
I DP
2 L
rds, accounts for channel width modulation resistance.

ECE 342 – Jose Schutt-Aine 8

 Midband Frequency Gain
Incremental model for complete amplifier

vout RB rds RD
AMB   gm
vin RB  Rg rds  RD

ECE 342 – Jose Schutt-Aine 9

 Example
In the circuit shown, VT=1 V, l=0, CoxW/2L=0.1
mA/V2. Select RD and R1 to result in midband
voltage gain of –4 and VDSQ=7 V.

VDD  VDSQ 5
RD  
I DQ I DQ
5
AMB   g m RD   g m
I DQ
5 3.162
AMB  4  0.1 I DQ    4
I DQ I DQ

ECE 342 – Jose Schutt-Aine 10

 Example (Cont’)
2
 3.162  5
I DQ    0.625 mA  RD   8 k
 4  0.625

0.625  0.1VGS  1 leads to 6.25  1  VGS  3.5 V

2

VDD R2 80 960
  12  3.5   80  R1  194 k 
R1  R2 80  R1 3.5

RD  8 k
R1  194 k

ECE 342 – Jose Schutt-Aine 11

 Example
For the circuit shown, k=75 mA/V2, VT=1 V, l=0
(a) Find VDQ, VSQ
(b) Find the midband gain

R2 20  5
VGQ  VDD   4V
R1  R2 25
VGSQ  VGQ  VSQ  4  2 I DQ
2 2
I DQ  K VGSQ  VT   0.075  4  2 I DQ  1

I DQ  0.075(9  12 I DQ  4 I DQ
2
)
2
4 I DQ  12 I DQ  9  13.3I DQ  I DQ
2
 6.33I DQ  2.25  0

ECE 342 – Jose Schutt-Aine 12

 Example (Cont’)

6.33  92
I DQ  3.167   0.378 mA or 5.953 mA
2 reject since voltage
drop across RD will

I DQ  0.378 mA
be too large

VDQ  VDD  RD I DQ  20  10  0.378  16.22 V

VSQ  RS I DQ  2  0.378  0.756 V

VDQ  16.22 V
VSQ  0.756 V
ECE 342 – Jose Schutt-Aine 13
 Example (Cont’)

W
g m  2k'
n I DQ  4  0.075  0.378  0.337
L

AMB   gm RD  0.337 10  3.37

AMB  3.37

ECE 342 – Jose Schutt-Aine 14

 MOS Body Effect

• The threshold voltage VT

– Depends on equilibrium potential
– Controlled by inversion in channel

• The body effect

– VT varies with bias between source and body
– Leads to modulation of VT

ECE 342 – Jose Schutt-Aine 15

 Body Effect
Potential on substrate affects threshold voltage

VT (VSB )  VTo    2 F  VSB    2 F

  
1/ 2 1/ 2

 
 kT   Na 
F    ln  n 
 q   i  Fermi potential of material

 2qN a s 
1/ 2

 Body bias coefficient

Cox

ECE 342 – Jose Schutt-Aine 16

 Body Effect – (Con’t)
Define gmb as the body transconductance

I D
g mb 
VBS VGS  constant
VDS  constant

Can show that

gmb   gm

VT 
where   
VSB 2 F  VSB

ECE 342 – Jose Schutt-Aine 17

 Source Follower Configuration
Since source is not tied to the substrate,
we need to model the body effect. Note:
substrate is always tied to ground.

1 1
GL  Define g ds  and G  g ds  g mb  GL
RL rds

ECE 342 – Jose Schutt-Aine 18

 Source Follower

g mvgs g m  vin  vout 

vout  
G G

vout g ds  vout GL  g mbvout  g mvgs

g mvgs g m  vin  vout 

vout G  g mvgs  vout  
G G

vout G  gmvin  gmvout

ECE 342 – Jose Schutt-Aine 19

 Source Follower

vout G  g mvgs  vout  G  g m   g mvin

gm gm
AGS  
g m  G g m  g mb  g ds  GL

gm gm
AGS  
g m  G g m  g mb  g ds  GL

ECE 342 – Jose Schutt-Aine 20

 Source Follower
Neglecting GL and gds (since they are small)
gm
AGS  1 This value is close to 1
g m  g mb
Output impedance of source follower
1 1
Rout  rds RL
gm g mb

Internal output impedance

1 1
rout  rds  This value is low
gm g mb

ECE 342 – Jose Schutt-Aine 21

 Common Gate Amplifier

Circuit

Small-Signal
Model

ECE 342 – Jose Schutt-Aine 22

 Common Gate Amplifier
g m  g mb  g ds
AMB 
GL  g ds   g m  g mb  g ds  GL / Gg

g ds  gm  gmb  to get

AMB 
 g m  g mb  RL
1   g m  g mb  Rg
• Common Gate (CG)
– CG amplifier is non-inverting
– CG amplifier has low input impedance
– CG is unity current-gain amplifier

ECE 342 – Jose Schutt-Aine 23

 MOS Topologies - Ideal

CS CG SF

Avo  gm RD gm RD 1

1
Rin  
gm

1
Rout RD RD gm

ECE 342 – Jose Schutt-Aine 24