Field-effect

Transistors
 TRANSFER
CHARACTERISTICS
• For BJT transistor,

LINEAR

• For the JFET transistor,

NON-LINEAR
 TRANSFER
CHARACTERISTICS
• The transfer
characteristics defined
by Shockley’s equation
are unaffected by the
network in which the
device is employed.
 TRANSFER
CHARACTERISTICS
 Determining the transfer
characteristics of a JFET
• Shorthand Method
o Using Shockley’s Equation

VGS ID
0 IDss
0.3VP IDSS / 2
0.5VP IDSS / 4
VP 0
 Sample Problem
• Sketch the transfer curve defined by IDSS = 12 mA and VP
= -6 V.
 Sample Problem
• Sketch the transfer curve defined by IDSS = 12 mA and VP
= -6 V.
Terminal Identification
JFET and BJT Important
Relationship
 Depletion-type MOSFET
• Basic Construction
 Depletion-type MOSFET
• Basic Operation and Characteristics
 Depletion-type MOSFET
• Basic Operation and Characteristics
 Depletion-type MOSFET
• Basic Operation and Characteristics
 Depletion-type MOSFET
• Basic Operation and Characteristics
 Sample Problem
• Sketch the transfer characteristics for an n-channel
depletion-type MOSFET with IDSS = 10 mA and VP = -4
V.
 Sample
Problem
• Sketch the transfer
characteristics for an
n-channel depletion-
type MOSFET with IDSS =
10 mA and VP = -4 V.
P-channel Depletion-type
MOSFET
P-channel Depletion-type
MOSFET
 Graphic Symbol of
Depletion-type MOSFET
 Enhancement-type
MOSFET
• Basic Construction
 Enhancement-type
MOSFET
• Basic Operation and Characteristics
 Enhancement-type
MOSFET
• Basic Operation and Characteristics
 Enhancement-type
MOSFET
• Saturation level of VGS,

• For VGS > VT,

 Enhancement-type
MOSFET
• Basic Operation and Characteristics
 Enhancement-type
MOSFET
• Basic Operation and Characteristics
Enhancement-type
MOSFET
 Enhancement-type
MOSFET
• P-channel enhancement-type MOSFET
 Enhancement-type
MOSFET
• P-channel enhancement-type MOSFET
 MOSFET Handling
• Problems associated in
handling MOSFET:
o Presence of static charge that can be pick-up
from the surrounding.
• Solution: use of shorting (or conduction)
shipping foil (or ring)

o Transients or sharp changes in voltage or

current.
• Solution: use of Zener diodes.
 VMOS and UMOS Power
MOSFET
• Power and current levels of MOSFETs have been
increased along with higher switching speeds and
reduced operating dissipation in these types of
MOSFET.
VMOS and UMOS Power
MOSFET
• UMOS Construction
VMOS and UMOS Power
MOSFET
• Advantages over planar MOSFETs:
o Power MOSFETs have reduced “on” resistance
levels and higher current and power ratings than
planar MOSFETs.
o Power MOSFETs have a positive temperature
coefficient, which combats the possibility of
thermal runaway.
o The reduced charge storage levels result in faster
switching times for vertical construction
compared to those for conventional planar
construction.
Complementary MOSFET
(CMOS)
• It has relatively high input impedance, fast switching
speeds, and lower operating power levels.
Complementary MOSFET
(CMOS)
 MESFET (Metal-
semiconductor FET)
 MESFET (Metal-
semiconductor FET)
 MESFET (Metal-
semiconductor FET)
 MESFET (Metal-
semiconductor FET)
QUESTIONS.. ???