GaN High Electron Mobility Transistors

(HEMT)

GUIDED BY PRESENTED BY
ROSHNI OOMMEN SHARON JOSEPH

1
 OUTLINE

• Problem definition

• Why GaN ?

• GaN HEMT structure

• Energy band diagram

• Equivalent model

• Operating regions of Ids

2
 PROBLEM DEFINITION
• To create a simple and accurate circuit-simulator model for GaN HEMT

• Extract parameters using I–V and C–V characteristics

3
 Why GaN??
• Wider bandgap (3.4eV)

• Higher thermal conductivity (1.3 W/cm C)

• High Breakdown voltage (>750V)

• Higher critical breakdown electric field

• High electron density

4
GaN HEMT STRUCTURE
• Heterojunction FET/MODFET
• Structure is formed by joining
two or more different band gap
materials
• 2-D electron gas = less electron
collisions = less noise

5
ENEGRY BAND DIAGRAM

• HEMTs utilize heterojunction

between two semiconducting
materials to confine electrons to
a triangular quantum well
• EC and EF determine the
electron density in the 2DEG

6
EQUIVALENT MODEL
• Model comprises of

 voltage dependent current source Ids

 voltage dependent capacitances

Cgd and Cds

 voltage independent gate source

capacitance Cgs

 3 parasitic resistances Rg, Rs and Rd

7
 VOLTAGE DEPENDENT CURRENT
SOURCE
• Ids is a bidirectional current source

• Positive Vgd will enhance forward conduction

• Positive Vgs will enhance reverse conduction

• Ids determines I–V characteristics in 4 operating modes:

Forward linear

Forward saturation

Reverse linear
8
Reverse saturation modes
 OPERATING REGIONS OF Ids
Operating region Condition Equation

Cut off Vg s < Vth1 , Vds ≥0 Ids=0

Vgd < Vth2 , Vsd ≥ 0
Forward conduction Vds < Vgs − Vth1 Id s =Kp1 [(Vg s −
linear region and Vd s > 0 Vth1 )Vd s − Vd s2 /2]
Forward conduction Vd s > Vgs − Vth1 > 0 Id s =Kp 1 (Vg s − Vth
saturation region and Vds > 0 1 )2(1 + λ1 Vd s )/2

Reverse conduction Vsd < Vgd − Vth2 and Id s = −Kp2[(Vg d −

linear Region Vsd > 0 Vth 2 )Vsd− Vsd2 /2]

Reverse conduction Vsd > Vgd − Vth2 > 0 Id s = −Kp2 (Vg d − 9

 PARASITIC CAPACITANCES
• Cgs is constant
• Cgd and Cds are nonlinear voltage
dependent parasitic capacitances
• Cgd0 is the zero-bias Cgd
• Cds0 is the zero-bias Cds
• m1 and m2 are the junction grading
coefficients for Cgd and Cds

10
 PARASITIC RESISTANCE
• Rd Drain parasitic resistance
• Rs Source parasitic resistance
• Rg Gate resistance

11
 EXPECTED OUTPUT

FORWARD CONDUCTION REVERSE CONDUCTION

12
 EXPECTED OUTPUT

C-V CHARACTERISTICS TRANSFER CHARACTERISTICS

13
RESULT

14
 CONCLUSION
• Simple and accurate circuit-simulator compact model for normally off
GaN HEMT device is developed
• Model parameters can be easily extracted from static I–V and C–V
characteristics.
• Model captures reverse channel conduction, which is a very important
feature for circuit designers
• Device model is validated under static conditions over a wide
temperature range of 25 to 125°c
• Future work can be done to improve the proposed GaN HEMT model,
such as dynamic Rds(on), which is not captured in this model
15
 REFERENCES
[1] Kang Peng, Soheila Eskandari, and Enrico Santi “Characterization and Modeling of a
Gallium Nitride Power HEMT,” IEEE transactions on industry applications, vol. 52, no.
6, november/december 2016
[2] E. Santi, K. Peng, H. A. Mantooth, and J. L. Hudgins, “Modeling of wide bandgap power
semiconductor devices-part II, ”IEEE Trans. Electron Devices, vol. 62, no. 2, pp. 434–442,
Feb. 2105.
[2] U. K.Mishra, P. Parikh, and Y.Wu, “AlGaN/GaN HEMTs—An overview of device operation
and applications,” in Proc. IEEE vol. 90, no. 6,pp.1022 Jun. 2002.
[3] M. A. Khan, G. Simin, S. Pytel, A. Monti, E. Santi, and J. L. Hudgins, “New developments
in gallium nitride and the impact on power electronics,” in Proc. IEEE Power Electron. Spec.
Conf., Jun. 2005, pp. 15–26.

16
THANK YOU

17