BIASING TECHNIQUES OF MOSFET

Enhancement MOSFET

1. Voltage Divider Bias

The above circuit shows the voltage divider biasing technique of MOSFET.
Resistors R1 and R2 connected to gate forms the voltage divider.
  Gate voltage , Vgg=   and

 Thevenin’s equivalent circuit is also shown above.

Here

The drain to ground voltage is given by

As Vgg is considered much greater than Vgs, Id would be a constant.

Hence dc stability is accomplished.

Drain to Gate Bias

 Above circuit shows drain to gate bias circuit for enhancement mode MOSFET.

Here stability is obtained through the feedback resistor, Rf

Common Source Circuit with source Resistor Bias

  Here
Depletion MOSFET
Self Biasing Technique

Above shows self bias circuit for Depletion MOSFET.

Voltage Divider Bias

Biasing resistors are R1 and R2. Above circuit shows voltage divider bias of
Depletion MOSFET
 DC load line for MOSFET
Vdd

From the above circuit, we can write the equation of output loop as
Vdd=(Id*Rd)+ Vds------------(1)
Writing above equation as straight line, with variables Vds and Id,we get as
Id=(Vds*(-1/Rd) )+ Vdd/Rd-----------------(2)
The straight line which represents the equation (2) is called DC load line .
DC load line has slope (-1/Rd). This DC load line is shown in the above figure.
Thus DC load line is the locus of constant Vdd and Rd on the output characteristics of
MOSFET.
Q point is the intersection of DC load line with the output characteristic of MOSFET at a
particular gate current.
Optimum Q point should be located at the midpoint of DC loadline.
The two endpoints of DC load line are (Vdd,0) and (0,Vdd/Rd).
Q point is chosen under zero input ac signal condition of the circuit.
 MOSFET as an amplifier

The biasing voltage Vbias and Vdd are given to configure transistor in active mode of
operation to work as amplifier. AC signal Vs is given along with the DC voltage.
During positive cycle of Vs, effective gate voltage would become more causing more
drain current to pass through channel. This larger drain current through Rd causes
amplified negative cycle of signal at the output.
Similarly, during negative cycle of input signal, effective gate voltage would be lesser
causing lesser drain current through the channel which when flows through Rd causes
amplified output in the positive direction.
Hence MOSFET works as amplifier.
MOSFET as switch
• Circuit for MOSFET as open switch is shown
• The input and Gate are grounded ( 0v )
• Gate-source voltage less than threshold voltage VGS < VTH
•  MOSFET is “OFF” ( Cut-off region )
•  No Drain current flows ( ID = 0 )
• VOUT = VDS = VDD = ”1″
•  MOSFET operates as an “open switch

• Circuit for MOSFET as closed switch is shown

•  The input and Gate are connected to VDD
• Gate-source voltage is much greater than
threshold voltage VGS > VTH
•  MOSFET is “ON” ( triode region )
•  Max Drain current flows ( ID = VDD / RL )
•  VDS = 0V (ideal saturation)
•  VOUT = VDS = ≅0.2V due to RDS(on)
•  MOSFET operates as a closed switch
• MOSFET acts as an ON switch in triode region of operation
and OFF switch in cut off region of operation

Voltage Transfer Characteristics of MOSFET