Beruflich Dokumente
Kultur Dokumente
Betul Arda
Huizi Diwu
Department of Electrical
and Computer Engineering
University of Rochester
Outline
Quantum Dots (QD)
Confinement Effect
Fabrication Techniques
Quantum Dot Lasers (QDL)
Historical Evolution
Predicted Advantages
Basic Characteristics
Application Requirements
Q. Dot Lasers vs. Q. Well Lasers
Market demand of QDLs
Comparison of different types of QDLs
Bottlenecks
Breakthroughs
Future Directions
Conclusion
Quantum Dots (QD)
Semiconductor nanostructures
Size: ~2-10 nm or ~10-50 atoms
in diameter
Unique tunability
Motion of electrons + holes = excitons
Confinement of motion can be created by:
Electrostatic potential
e.g. in e.g. doping, strain, impurities,
external electrodes
the presence of an interface between different
semiconductor materials
e.g. in the case of self-assembled QDs
the presence of the semiconductor surface
e.g. in the case of a semiconductor nanocrystal
or by a combination of these
Quantum Confinement Effect
E = Eq1 + Eq2 + Eq3, Eqn = h2(q1π/dn)2 / 2mc
Quantization of density of states: (a) bulk (b) quantum well (c) quantum wire (d) QD
QD – Fabrication Techniques
Core shell quantum
structures
Self-assembled QDs
and Stranski-
Krastanov growth
MBE (molecular beam
epitaxy)
MOVPE
(metalorganics vapor
phase epitaxy)
Monolayer fluctuations
Gases in remotely Schematic representation of different approaches to
fabrication of nanostructures: (a) microcrystallites in
doped glass, (b) artificial patterning of thin film structures,
heterostructures (c) self-organized growth of nanostructures
QD Lasers – Historical Evolution
QDL – Predicted Advantages
Wavelength of light determined by the energy levels not by
bandgap energy:
improved performance & increased flexibility to adjust the
wavelength
Maximum material gain and differential gain
Small volume:
low power high frequency operation
large modulation bandwidth
small dynamic chirp
small linewidth enhancement factor
low threshold current
Superior temperature stability of I threshold
Datacom network
Telecom network
QD Lasers
Optics
Market demand of QD lasers
Earlier QD Laser Models Updated QD Laser Models
Temperature dependence of light-current characteristics Modulation waveform at 10Bbps at 20°C and 70 °C with no current adjustment
Breakthroughs
InP instead of GaAs
Zia Laser's quantum-dot laser structures comprise an active region that looks
like a quantum well, but is actually a layer of pyramid-shaped indium-arsenide
dots. Each pyramid measures 200 Å along its base, and is 70–90 Å high. About
100 billion dots in total would be needed to fill an area of one square
centimeter. -----www.fibers.org
Future Directions
Widening to Reduce inhomogeneous
parameters range linewidth broadening
Further controlling using
the position and Surface Preparation
dot size Technology
by
Decouple the Allowing the injection of
carrier capture cooled carriers
from the escape
procedure
In term of
Combination of QD Raised gain at the
lasers and QW fundamental transition
lasers
energy
Conclusion
During the previous decade, there was an
intensive interest on the development of quantum
dot lasers. The unique properties of quantum dots
allow QD lasers obtain several excellent
properties and performances compared to
traditional lasers and even QW lasers.