Lecture 9

Biomedical
Microtechnology
and
Nanotechnology
Microfabrication and Nanofabrication
applied to Biomedical Instrumentation
 Why Micro/Nano ?
SCALING OF PARAMETERS
The values of various parameters depends on the dimensions of the system
and this proves to be helpful in a number of cases.

Example : Cantilever bending (Mechanical Parameters)

Force F
Density of Material = 3.5 x 103 kg/m3

Young’s Modulus = 1012 N/m2 Deflection d

Material properties such as Young’s modulus remain approximately the

same in the micro and macro versions.
However, they are relatively more different in case of nano dimensions
because nano dimensions come closer to molecular level.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Consider that the dimensions of the cantilever are reduced 10000 times, i.e
the length, breadth and thickness change from 100 cm, 10cm and 1cm to
100microns, 10 microns and 1 micron respectively.

If S represents any dimension in general then,

Mass
Mass = Density x Volume = Constant x S3
Therefore mass goes down (104)3 or is reduced 1012 times as the original beam

Strength to Mass Ratio

Total strength scales with its cross-sectional area. Hence, total strength scales
as S2. Hence, total strength to mass ratio scales as S-1.
As a result, the micro cantilever is 104 times stronger than the macro model.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Force
Deflection Fl 3 4 Fl 3 length

d= =
3EI Ebt 3 thickness
breadth
Young’s Modulus
Moment of Inertia

Force will vary with cross-sectional area if the stress is to be kept constant
Therefore, deflection is proportional to S1. Therefore, the same stress is
generated in the two models if the deflection in the microcantilever is 10-4
times the deflection in the macro model, thus maintaining the bending shape.

A much smaller force can be sensed (10-8 times) with the micro cantilever.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Frequency
Frequency scales as the square root of the ratio of the stiffness and
mass. Thus, frequency scales as S-1. Hence, micro and nano
applications can be high frequency applications.

Huang et al have achieved a

nanomechanical silicon carbide
resonator for ultra high frequency
applications.

Resonant frequencies have been as high

as 632 MHz.

Reference :
http://www.bu.edu/nems/SiC%20high%20frequency%20Henry.pdf
 Why Micro/Nano ?
SCALING OF PARAMETERS
Example : Capacitor (Electrical Parameters)
If the same electric field E = 108 V/m needs to be mainitained between
the plates of a micro sized capacitor and a macro sized capacitor, then

Voltage
Voltage = E x gap
Thus, voltage will scale as the gap between the plates. Therefore a
much smaller voltage will be required in the micro case to produce the
same effect.

+V
gap

gnd
 Why Micro/Nano ?
SCALING OF PARAMETERS
Electrostatic Force
Electrostatic force = Area x (electrostatic field)2
Thus, electrostatic force scales as S2 if electrostatic field is maintained same.
However, if voltage is to be maintained same, electrostatic force would be
independent of scaling. However, its effect in the micro case would be more
pronounced because relatively, inertial forces are very low.
Electromagnetic force scales as S4 if magnetic field is to be constant and thus,
the world of mems relies on electrostatic motors as opposed to electromagnetic
motors .

Capacitance
Capacitance scales as S1.
 Why Micro/Nano ?
SCALING OF PARAMETERS

An electrostatic micromotor An electrostatic comb drive actuator

 Advantages of Micro/Nano Fluidics
for Biomedical Applications
• Device size for hand-held instrumentation and point-of-care
testing is minimal.
• Provides for efficient use of expensive chemical reagents and
low production costs per device allowing disposable
microfluidic systems.
• Precise volumetric control of samples and reagents is possible,
which leads to higher sensitivities.
• High-throughput biological screening is made possible by
faster sampling times through parallel processing of samples.
• In-situ production of unstable compounds for biological assays
is also possible.
• Ratio of surface area to volume is high and thus, the sensing is
more effective in case of electrochemical sensors etc.
 Disadvantages of Micro/Nano
Fluidics for Biomedical Applications
• Bubbles block exits.
This could be controlled by either priming at high pressures or
by using different priming agents such as ethanol or carbon
dioxide.
• Unwanted particles
Fine filtering of solutions becomes important.
• Surface tension plays funny.
Microscale modeling needs to be done and mechanics is not
particularly intuitive. However, surface tension forces could be
exploited as well !
• Interfacing with the macroscale equipment is not easy.
 Micro/Nano applied to BME

Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm

Micro/Nano applied to BME

Taken from : www.heartcenteronline.com

 Micro/Nano applied to BME
Balloon Angioplasty

Stent Procedure
and

Stent Procedure
Balloon Angioplasty
http://www.med.umich.edu/1libr/aha/aha_dil http://www.mdmercy.com/vascular/discoveries/bal
ation_art.htm
 Micro/Nano applied to BME

Micromachined silicon neural probe arrays Michigan Probe

Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Micro/Nano applied to BME

Drug Delivery Probes

Micro/Nano applied to BME
 Micro/Nano applied to BME

An implantable blood Surgical microgripper actuated by SMA

Taken from
pressure sensor developed
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pd
by CardioMEMS f
 Micro/Nano
Fabrication Techniques
Generalized Microfabrication

Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm

 Photolithography
Clean wafer : to remove particles on the surface as well as any
traces of organic, ionic, and metallic impurities
Dehydration bake: to drive off the absorbed water on the surface
to promote the adhesion of PR
Coating :
a) Coat wafer with adhesion promoting film (e.g., HMDS) (optional)
b) Coat with photoresist
Soft bake : to drive off excess solvent and to promote adhesion
Exposure
Post exposure bake (optional): to suppress standing wave-effect
Develop
Clean, Dry
Hard bake: to harden the PR and improve adhesion to the
substrate
 Photolithography

Taken from : http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_PhotolithographyI.pdf

 Additive Processes
Oxidation
Thermal Oxidation of Silicon is done in a furnace in wet or dry conditions
 Additive Processes
Doping
Purpose of Doping in MEMS
- Make P++ etch stop
- Change restivity of the film (e.g. make piezoresistor,connecting wire)
Dopants : N type (Phosphorous, Arsenic), P type (Boron)

Doping Methods
2. Diffusion
Dopants are diffused thermally into the
substrate in furnace at 950 – 1280 0C.
It is governed by Fick’s Laws of Diffusion.

2. Ion Implantation
Dopant ions bombarded into targeting
substrate by high energy.
Ion implantation are able to place any ion at
any depth in sample.
 Additive Processes
Physical Vapor Deposition (PVD)
1. Evaporation
Deposition is achieved by evaporation
or sublimation of heated metal onto
substrate.
This can be done either by resistance
heating or by e-beam bombardment.

Thermal Evaporator
 Additive Processes
Physical Vapor Deposition (PVD)
2. Sputtering

Sputtering is achieved by accelerated

inert ion (Ar+) by DC or RF drive in
plasma through potential gradient to
bombard metallic target.

Then the targeting material is

sputtered away and deposited onto
substrate placed on anode.
 Additive Processes
Physical Vapor Deposition (PVD)
 Additive Processes
Chemical Vapor Deposition (CVD)
Materials deposited
Polysilicon, silicon nitride (Si3N4), silicon oxide (SiOx), silicon carbide (SiC) etc.

How does CVD Work?

Gaseous reactants are introduced into chamber at elevated temperatures.
Reactant reacts and deposits onto substrate

Types of CVD
LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD)

Salient Features
CVD results depend on pressure, gas, and temperature
Can be diffusion or reaction limited
Varies from film composition, crystallization, deposition rate and electrical and
mechanical properties
 Subtractive Processes
Dry Etching
1. Dry Chemical Etching
HF Etching
HF is a powerful etchant and hence, highly dangerous.
XeF2 Etching
2XeF2+Si→2Xe+SiF4
Isotropic etching (typically 1-3µm/min)
Does not attack aluminum, silicon dioxide, and silicon nitride
 Subtractive Processes
Dry Etching
Plasma Etching

Reaction Mechanism
Produce reactive species in gas-phase Reactive species diffuse to the solid
Adsorption, and diffuse over the surface Reaction Desorption Diffusion
 Subtractive Processes
Dry Etching
3. Deep Reactive Ion Etching (DRIE)
A very high-aspect-ratio silicon etch method
(usually > 30:1)

BOSCH Process
Etch rate is 1.5 – 4 µm/min
SF6 to etch silicon
Approx. 10nm flourcarbon polymer (similar
is plasma deposited using C4H8
Energetic ions (SF6+) remove protective
polymer at the bottom trench
Subtractive Processes

DRIE Etched Pillars

 Subtractive Processes
Wet Etching

Isotropic Wet Etching

Isotropic etchants etch in all directions
at nearly the same rate.

Commonly use chemical for Silicon is

HNA (HF/HNO3/Acetic Acid)

This results in a finite amount of

undercutting
 Subtractive Processes
Wet Etching
Anisotropic Wet Etching
Anisotropic etchants etch much faster
in one direction than in another.
Etchants are generally Alkali
Hydroxides (KOH, NaOH, CeOH, ..)
KOH on silicon
Slower etch rate on (111) planes
Higher etch rate on (100) and (110)
planes (400 times more faster than
the (111) plane)
Typical concentration of KOH
is around 40 wt%
Reaction :
Silicon (s) + Water + Hydroxide Ions → Silicates + Hydrogen
Metal Patterning
Surface Micromachining
 Example

1. Pumping membrane 2. Pumping chamber

3. Inlet 4. Outlet
5. Large mesa 6. Upper glass plate
7. Bottom glass plate 8. patterned thin layer (for improved fluidics)
An insulin pump fabricated by classic MEMS technology
(Surface Micromachining)
MEMS Packaging
 Fabrication of
Microfluidic Channels
 Materials
• Silicon / Si compounds
- Classical MEMS approach
- Etching involved
• Polymers / Plastics
- Newer methods
- primary die yet needed
- easy fabrication of subsequent
components
 Etching Methods
Step 1 : Etching of Si
- Isotropic / Anisotropic
- HNA for isotropic
- KOH/EDP/TMAH for
anisotropic
- RIE can also be used
for high aspect ratios
 Etching Methods
Step 2 : Closure of channel
b) Bonding another
substrate
c) LPCVD coating
d) Ground Plate Supported
Insulating Channels
 Etching Methods
Step 2 : Closure
d) Closing Holes in the
mask material
- channel is defined
by a sequence of
holes.
- channel formed by
underetching
 Etching Methods
Step 2 : Closure
e) Burying channels
beneath surface
- Trench made using
RIE.
- KOH etching to form
microchannels
- Oxide fills trench
Surface Micromachining
A Comparative study
 Using Polymers/Plastics

• Imprinting and Hot Embossing

• Injection Molding
• Laser Photoablation
• Soft Lithography
• X ray Lithography (LIGA)
 Imprinting/Embossing
• Stamp made in Si or
metal
• Stamp pressed on
Plastic to form
microfluidic channels
• Many common
plastics successfully
imprinted
 Soft Lithography
• Elastomeric polymer
cast in a Si stamp and
cured
• Polymer is peeled off
• Channel architecture
thus transferred to the
polymer
• PDMS technology is
becoming popular
 Laser Photoablation
• High aspect ratio
channels achievable
• Laser pulses in the
UV region used
• Sealing by thermal
lamination with a
PET/PE film at 1250C
• Depth controllable
 References
http://www.kuos.org/archives/MEMS%20Short%20Course.pdf
http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
http://mems.cwru.edu/shortcourse/
http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_Ph
otolithographyI.pdf
http://www.memsnet.org
 Lecture 9
Biomedical
Microtechnology
and
Nanotechnology
Microfabrication and Nanofabrication
applied to Biomedical Instrumentation
 Why Micro/Nano ?
SCALING OF PARAMETERS
The values of various parameters depends on the dimensions of the system
and this proves to be helpful in a number of cases.

Example : Cantilever bending (Mechanical Parameters)

Force F
Density of Material = 3.5 x 103 kg/m3

Young’s Modulus = 1012 N/m2 Deflection d

Material properties such as Young’s modulus remain approximately the

same in the micro and macro versions.
However, they are relatively more different in case of nano dimensions
because nano dimensions come closer to molecular level.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Consider that the dimensions of the cantilever are reduced 10000 times, i.e
the length, breadth and thickness change from 100 cm, 10cm and 1cm to
100microns, 10 microns and 1 micron respectively.

If S represents any dimension in general then,

Mass
Mass = Density x Volume = Constant x S3
Therefore mass goes down (104)3 or is reduced 1012 times as the original beam

Strength to Mass Ratio

Total strength scales with its cross-sectional area. Hence, total strength scales
as S2. Hence, total strength to mass ratio scales as S-1.
As a result, the micro cantilever is 104 times stronger than the macro model.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Force
Deflection Fl 3 4 Fl 3 length

d= =
3EI Ebt 3 thickness
breadth
Young’s Modulus
Moment of Inertia

Force will vary with cross-sectional area if the stress is to be kept constant
Therefore, deflection is proportional to S1. Therefore, the same stress is
generated in the two models if the deflection in the microcantilever is 10-4
times the deflection in the macro model, thus maintaining the bending shape.

A much smaller force can be sensed (10-8 times) with the micro cantilever.
 Why Micro/Nano ?
SCALING OF PARAMETERS
Frequency
Frequency scales as the square root of the ratio of the stiffness and
mass. Thus, frequency scales as S-1. Hence, micro and nano
applications can be high frequency applications.

Huang et al have achieved a

nanomechanical silicon carbide
resonator for ultra high frequency
applications.

Resonant frequencies have been as high

as 632 MHz.

Reference :
http://www.bu.edu/nems/SiC%20high%20frequency%20Henry.pdf
 Why Micro/Nano ?
SCALING OF PARAMETERS
Example : Capacitor (Electrical Parameters)
If the same electric field E = 108 V/m needs to be mainitained between
the plates of a micro sized capacitor and a macro sized capacitor, then

Voltage
Voltage = E x gap
Thus, voltage will scale as the gap between the plates. Therefore a
much smaller voltage will be required in the micro case to produce the
same effect.

+V
gap

gnd
 Why Micro/Nano ?
SCALING OF PARAMETERS
Electrostatic Force
Electrostatic force = Area x (electrostatic field)2
Thus, electrostatic force scales as S2 if electrostatic field is maintained same.
However, if voltage is to be maintained same, electrostatic force would be
independent of scaling. However, its effect in the micro case would be more
pronounced because relatively, inertial forces are very low.
Electromagnetic force scales as S4 if magnetic field is to be constant and thus,
the world of mems relies on electrostatic motors as opposed to electromagnetic
motors .

Capacitance
Capacitance scales as S1.
 Why Micro/Nano ?
SCALING OF PARAMETERS

An electrostatic micromotor An electrostatic comb drive actuator

 Advantages of Micro/Nano Fluidics
for Biomedical Applications
• Device size for hand-held instrumentation and point-of-care
testing is minimal.
• Provides for efficient use of expensive chemical reagents and
low production costs per device allowing disposable
microfluidic systems.
• Precise volumetric control of samples and reagents is possible,
which leads to higher sensitivities.
• High-throughput biological screening is made possible by
faster sampling times through parallel processing of samples.
• In-situ production of unstable compounds for biological assays
is also possible.
• Ratio of surface area to volume is high and thus, the sensing is
more effective in case of electrochemical sensors etc.
 Disadvantages of Micro/Nano
Fluidics for Biomedical Applications
• Bubbles block exits.
This could be controlled by either priming at high pressures or
by using different priming agents such as ethanol or carbon
dioxide.
• Unwanted particles
Fine filtering of solutions becomes important.
• Surface tension plays funny.
Microscale modeling needs to be done and mechanics is not
particularly intuitive. However, surface tension forces could be
exploited as well !
• Interfacing with the macroscale equipment is not easy.
 Micro/Nano applied to BME

Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm

Micro/Nano applied to BME

Taken from : www.heartcenteronline.com

 Micro/Nano applied to BME
Balloon Angioplasty

Stent Procedure
and

Stent Procedure
Balloon Angioplasty
http://www.med.umich.edu/1libr/aha/aha_dil http://www.mdmercy.com/vascular/discoveries/bal
ation_art.htm
 Micro/Nano applied to BME

Micromachined silicon neural probe arrays Michigan Probe

Taken from
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pdf
Micro/Nano applied to BME

Drug Delivery Probes

Micro/Nano applied to BME
 Micro/Nano applied to BME

An implantable blood Surgical microgripper actuated by SMA

Taken from
pressure sensor developed
http://www.ee.ucla.edu/~jjudy/publications/conference/msc_2000_judy.pd
by CardioMEMS f
 Micro/Nano
Fabrication Techniques
Generalized Microfabrication

Taken from : http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm

 Photolithography
Clean wafer : to remove particles on the surface as well as any
traces of organic, ionic, and metallic impurities
Dehydration bake: to drive off the absorbed water on the surface
to promote the adhesion of PR
Coating :
a) Coat wafer with adhesion promoting film (e.g., HMDS) (optional)
b) Coat with photoresist
Soft bake : to drive off excess solvent and to promote adhesion
Exposure
Post exposure bake (optional): to suppress standing wave-effect
Develop
Clean, Dry
Hard bake: to harden the PR and improve adhesion to the
substrate
 Photolithography

Taken from : http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_PhotolithographyI.pdf

 Additive Processes
Oxidation
Thermal Oxidation of Silicon is done in a furnace in wet or dry conditions
 Additive Processes
Doping
Purpose of Doping in MEMS
- Make P++ etch stop
- Change restivity of the film (e.g. make piezoresistor,connecting wire)
Dopants : N type (Phosphorous, Arsenic), P type (Boron)

Doping Methods
2. Diffusion
Dopants are diffused thermally into the
substrate in furnace at 950 – 1280 0C.
It is governed by Fick’s Laws of Diffusion.

2. Ion Implantation
Dopant ions bombarded into targeting
substrate by high energy.
Ion implantation are able to place any ion at
any depth in sample.
 Additive Processes
Physical Vapor Deposition (PVD)
1. Evaporation
Deposition is achieved by evaporation
or sublimation of heated metal onto
substrate.
This can be done either by resistance
heating or by e-beam bombardment.

Thermal Evaporator
 Additive Processes
Physical Vapor Deposition (PVD)
2. Sputtering

Sputtering is achieved by accelerated

inert ion (Ar+) by DC or RF drive in
plasma through potential gradient to
bombard metallic target.

Then the targeting material is

sputtered away and deposited onto
substrate placed on anode.
 Additive Processes
Physical Vapor Deposition (PVD)
 Additive Processes
Chemical Vapor Deposition (CVD)
Materials deposited
Polysilicon, silicon nitride (Si3N4), silicon oxide (SiOx), silicon carbide (SiC) etc.

How does CVD Work?

Gaseous reactants are introduced into chamber at elevated temperatures.
Reactant reacts and deposits onto substrate

Types of CVD
LPCVD (Low Pressure CVD), PECVD (Plasma Enhanced CVD)

Salient Features
CVD results depend on pressure, gas, and temperature
Can be diffusion or reaction limited
Varies from film composition, crystallization, deposition rate and electrical and
mechanical properties
 Subtractive Processes
Dry Etching
1. Dry Chemical Etching
HF Etching
HF is a powerful etchant and hence, highly dangerous.
XeF2 Etching
2XeF2+Si→2Xe+SiF4
Isotropic etching (typically 1-3µm/min)
Does not attack aluminum, silicon dioxide, and silicon nitride
 Subtractive Processes
Dry Etching
Plasma Etching

Reaction Mechanism
Produce reactive species in gas-phase Reactive species diffuse to the solid
Adsorption, and diffuse over the surface Reaction Desorption Diffusion
 Subtractive Processes
Dry Etching
3. Deep Reactive Ion Etching (DRIE)
A very high-aspect-ratio silicon etch method
(usually > 30:1)

BOSCH Process
Etch rate is 1.5 – 4 µm/min
SF6 to etch silicon
Approx. 10nm flourcarbon polymer (similar
is plasma deposited using C4H8
Energetic ions (SF6+) remove protective
polymer at the bottom trench
Subtractive Processes

DRIE Etched Pillars

 Subtractive Processes
Wet Etching

Isotropic Wet Etching

Isotropic etchants etch in all directions
at nearly the same rate.

Commonly use chemical for Silicon is

HNA (HF/HNO3/Acetic Acid)

This results in a finite amount of

undercutting
 Subtractive Processes
Wet Etching
Anisotropic Wet Etching
Anisotropic etchants etch much faster
in one direction than in another.
Etchants are generally Alkali
Hydroxides (KOH, NaOH, CeOH, ..)
KOH on silicon
Slower etch rate on (111) planes
Higher etch rate on (100) and (110)
planes (400 times more faster than
the (111) plane)
Typical concentration of KOH
is around 40 wt%
Reaction :
Silicon (s) + Water + Hydroxide Ions → Silicates + Hydrogen
Metal Patterning
Surface Micromachining
 Example

1. Pumping membrane 2. Pumping chamber

3. Inlet 4. Outlet
5. Large mesa 6. Upper glass plate
7. Bottom glass plate 8. patterned thin layer (for improved fluidics)
An insulin pump fabricated by classic MEMS technology
(Surface Micromachining)
MEMS Packaging
 Fabrication of
Microfluidic Channels
 Materials
• Silicon / Si compounds
- Classical MEMS approach
- Etching involved
• Polymers / Plastics
- Newer methods
- primary die yet needed
- easy fabrication of subsequent
components
 Etching Methods
Step 1 : Etching of Si
- Isotropic / Anisotropic
- HNA for isotropic
- KOH/EDP/TMAH for
anisotropic
- RIE can also be used
for high aspect ratios
 Etching Methods
Step 2 : Closure of channel
b) Bonding another
substrate
c) LPCVD coating
d) Ground Plate Supported
Insulating Channels
 Etching Methods
Step 2 : Closure
d) Closing Holes in the
mask material
- channel is defined
by a sequence of
holes.
- channel formed by
underetching
 Etching Methods
Step 2 : Closure
e) Burying channels
beneath surface
- Trench made using
RIE.
- KOH etching to form
microchannels
- Oxide fills trench
Surface Micromachining
A Comparative study
 Using Polymers/Plastics

• Imprinting and Hot Embossing

• Injection Molding
• Laser Photoablation
• Soft Lithography
• X ray Lithography (LIGA)
 Imprinting/Embossing
• Stamp made in Si or
metal
• Stamp pressed on
Plastic to form
microfluidic channels
• Many common
plastics successfully
imprinted
 Soft Lithography
• Elastomeric polymer
cast in a Si stamp and
cured
• Polymer is peeled off
• Channel architecture
thus transferred to the
polymer
• PDMS technology is
becoming popular
 Laser Photoablation
• High aspect ratio
channels achievable
• Laser pulses in the
UV region used
• Sealing by thermal
lamination with a
PET/PE film at 1250C
• Depth controllable
 References
http://www.kuos.org/archives/MEMS%20Short%20Course.pdf
http://mems.colorado.edu/c1.res.ppt/ppt/g.tutorial/ppt.htm
http://mems.cwru.edu/shortcourse/
http://www2.ece.jhu.edu/faculty/andreou/495/2003/LectureNotes/Handout3a_Ph
otolithographyI.pdf
http://www.memsnet.org
Applications
WPI’s Nitric Oxide
Nanosensor
 Nitric Oxide Sensor
• Developed at Dr.Thakor’s Lab, BME, JHU
• Electrochemical detection of NO

Left: Schematic of the 16-electrode sensor array. Right: Close-up of a

single site. The underlying metal is Au and appears reddish under the
photoresist. The dark layer is C (300µm-x-300µm)
 A

B
F

C G

D H

Cartoon of the fabrication sequence for the NO sensor array

A) Bare 4” Si wafer B) 5µm of photoresist was spin-coated on to the surface, followed by a pre-
bake for 1min at 90°C. C) The samples were then exposed through a mask for 16s using UV
light at 365nm and an intensity of 15mW/cm2. D) Patterned photoresist after development. E)
20nm of Ti, 150nm of Au and 50nm of C were evaporated on. F) The metal on the unexposed
areas was removed by incubation in an acetone bath. G)A 2nd layer of photoresist, which
serves as the insulation layer, was spun on and patterned. H) The windows in the second layer
also defined the microelectrode sites.
NO Sensor Calibration
NO Sensor Calibration
Multichannel NO
Recordings
Michigan Probes for Neural
Recordings
 Neural Recording
Microelectrodes

Reference :
http://www.acreo.se/acreo-rd/IMAGES/PUBLICATIONS/PROCEEDINGS/ABSTRACT-
KINDLUNDH.PDF
 Multi-electrode Neural
Recording

Reference :
http://www.cyberkineticsinc.com/technology.htm

Reference :
http://www.nottingham.ac.uk/neuronal-networks/mmep.htm
 Intraocular Stimulation
Electrodes
Reference : Lutz Hesse, Thomas Schanze, Marcus Wilms and Marcus Eger, “Implantation of retina stimulation
electrodes and recording of electrical stimulation responses in the visual cortex of the cat”, Graefe’s Arch Clin Exp
Ophthalmol (2000) 238:840–845