Beruflich Dokumente
Kultur Dokumente
Andhra Pradesh
Name :G sudhakar reddy.
Designation :Senior lecturer.
Branch: :ECE
Institute :Government polytechnic
narsipatnam.
Year/semester :iii semester.
Subject :Electronics circuits-i.
Subject code :EC-302.
Topic :FET&UJT.
Duration :100min
Sub topic :Depletion MOSFETs
Teaching aids :animation & photographs
EC302.37 TO 38 1
OBJECTIVES
EC302.37 TO 38 2
DO YOU KNOW
ENHANCEMENT MOSFET
D D
substrate
G
G
S S
N channel
N channel
EC302.37 TO 38 3
CIRCUIT SYMBOLS OF DEPLETION TYPE MOSFET
DEPLETION MOSFET
D
D
substrate
G
G
S S
N channel N channel
EC302.37 TO 38 4
CONSTRUCTION
EC302.37 TO 38 5
CONSTRUCTION
EC302.37 TO 38 6
CONSTRUCTION OF P CHANNEL
DEPLETION MOSFET
•Depletion MOSFET may be
source Al layer Drain
Gate fabricated from the basic
Si o2 MOSFET structure.
layer
n+ n+
Diffused •An p-type channel is obtained
n channel
by diffusion between p+ type
source and drain in an p-
p-type substrate channel MOSFET.
EC302.37 TO 38 7
source Al layer Drain
Gate
Si o2
layer
n+ n+ •In p-channel depletion MOSFETs
Diffused are made by using n-type
n channel
substrate and diffusing a
lightly doped p-type channel
p-type substrate
between two heavily doped
P-type source & drain blocks
P channel Depletion MOSFET
EC302.37 TO 38 8
Symbols of p channel depletion MOSFET
D
D
substrate
G
G
S
S
P channel P channel
EC302.37 TO 38 9
Working • Negative gate operation of a
depletion MOSFET is called
Its depletion mode Operation
EC302.37 TO 38 10
Working
When negative voltage is
applied to the gate as shown
in Fig positive charges are
source Al layer induced in the channel by
V GS Gate Drain
Si o2 capacitor action
layer
The induced positive charges
n++++++++++ make the channel less
p-type substrate conductive and drain current
decreases as V GS is made
more negative.
EC302.37 TO 38 11
Working
source Al layer
V GS Gate Drain
Si o2
layer
n++++++++++
EC302.37 TO 38 12
• When positive voltage is applied to the gate free
EC302.37 TO 38 13
Drain Characteristics of depletion MOSFET
Id(ma)
}
VGS= +2V
• When the gate source
VGS= +1V Enhancement
voltage is zero
8 Mode considerable drain current
VGS= 0V flows.
6
VGS= -1V
• When the gate is applied
4 VGS= -3V } Depletion
Mode
with negative voltage,
positive charge are
2 induced in the n-channel
V ds through the SiO2 layer of
5 10 15 20 the gate capacitor.
0
Fig.38.3
EC302.37 TO 38 14
Drain Characteristics of depletion MOSFET
Id(ma)
• The conduction in n-
6
} Enhancement
Mode
channel FET is due to
electrons i.e., the
majority carriers.
}
in the channel results in
Enhancementdepletion of majority carriers.
8 Mode
• That is why this type of FET
6 is called depletion MOSFET.
4 } Depletion
Mode
• The voltage drop due to the
drain current causes the
2 channel region nearer to the
V ds drain to be more depleted
0 5 10 15 20 than the region due to the
source.
Fig. 38.3
EC302.37 TO 38 16
Drain Characteristics of depletion MOSFET
8
Id(ma)
6
} Enhancement
Mode
2
}Depletion
Mode
V ds
0 5 10 15 20
Fig. 38. 3
EC302.37 TO 38 18
Drain Characteristics of depletion MOSFET
EC302.37 TO 38 19
SUMMARY
EC302.37 TO 38 20
QUIZ
(d)Present
(e)Not present
(f) None
EC302.37 TO 38 21
Frequently asked questions
EC302.37 TO 38 22