Department Of Technical Education

Andhra Pradesh

Name : G Sudhakar Reddy.

Designation : Senior Lecturer.
Branch: : ECE
Institute : Government Polytechnic Narsipatnam.
Year/Semester : III semester.
Subject : ELECTRONICS CIRCUITS-I.
Subject Code : EC-302.
Topic : FET&UJT.
DURATION : 50 MIN
SUB TOPIC : CONSTRUCTION OF UJT

TEACHING AIDS : PHOTOGRAPHS

EC302.41 1
Objectives

On completion of this period you would be able to know

• Layer diagram of UJT

• Constructional features of UJT
• Terminals of UJT.

• Specifications of UJT.

EC302.41 2
2
 CONSTRUCTION OF UJT

UJT consists of lightly doped

1
n-type silicon bar with an electrical B2 PN Junction

connection on each end

E P
These connections are called N type
Silicon bar
base1 (B1)and base2(B2 )
N
Along the bar between two bases,
nearer to base2 a P-N junction B1

is formed by doping P-type

material
EC302.41 3
3
 CONSTRUCTION OF UJT(contd.)

• The lead connected to the P-type

1

B2 PN Junction
material is called emitter

E P
• UJT is a three terminal device. N type
Silicon bar

N
• since the device has one
p-n junction and three leads, it is
B1
called as unijunction transistor
EC302.41 4
4
 CONSTRUCTION OF UJT (contd.)

With only one p-n junction, the B2 PN

1
device is really a form of diode Junction
because two base terminal are
taken from one section of the E P
diode this device is also called N type
double-based diode Silicon bar

The emitter is heavily doped the N

n-region, is lightly doped for
this reason the resistance B1
between the base terminals is
very high (5to10 kohms) when
emitter lead is open
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5
UNI JUNCTION TRANSISTOR

DEVICE CIRCUIT SYMBOL

EC302.41 6
6
 Equivalent circuit of UJT

• The PN junction behaves 0

like a diode

• The lightly doped silicon

bar has high resistance
can be represented by
two resistors connected
in series RB1 and RB2.

EC302.41 7
7
 Equivalent circuit of UJT(contd.)
0

• The Resistance offered

by N-type bar between
0

Base-1 and Emitter is

referred as RB1.

• The Resistance offered

by N-type bar between
Base-2 and Emitter is
referred as RB2.

EC302.41 8
8
 Equivalent circuit of UJT(contd.)

• The Resistance of N-type

bar is known as Base
spreading resistance RBB.

• RBB = RB1 + RB2

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 Intrinsic stand of ratio

• The intrinsic stand-off

ratio is denoted by η.
0

• η = RB1/(RB1+RB2)

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10
 Intrinsic stand of ratio

• The intrinsic stand-off

ratio is the property of a
0

UJT is always less than

unity

• Typical range of η is lies

between 0.5 to 0.8

EC302.41 11
11
Summary
• The device has only one PN junction hence it
is Unijunction device.
• It differ by ordinary diode that it has three
terminals.
• The unijunction transistor Emitter is heavily
doped where N-region is lightly doped.

EC302.41 12
12
Summary

• The resistance between base terminals is

high typically 4 to 10 k-ohms.
• Intrinsic stand-off ratio η = RB1/(RB1+RB2).
• Typical values of Intrinsic stand-off ratio( η ) is
0.5 to 0.8.

EC302.41 13
13
Quiz

2. The P-region in UJT is

a) Lightly doped.
b) Randomly doped.
c) Heavily doped.
d) None.

EC302.41 14
2.The circuit symbol of Unijunction transistor is
a b

c d

EC302.41 15
 FREQUENTLY ASKED QUESTION

1. Explain the constructional details of UJT.

2. Draw the equivocate circuit of UJT.

3. Explain the terms Rbb, Rb1 and Rb2.

4. Explain the term intrinsic and off ratio.

EC302.41 16