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DEPARTMENT OF TECHNICAL

EDUCATION,A.P.
Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code :EE-305
Topic : Special devices
Duration : 50Mts.
Sub Topic : Drain characteristics of FET
Teaching Aids : Diagrams

EE-305.47
Recap

• Already we discussed about the terminals of FET.

• Functions of Drain,Source,Gate terminals of FET.

• Working principle of FET.

EE-305.47 2
Objectives

• Upon completion of this period the student will be


able to know

• On condition of FET.

• Drain characteristics of FET.

• Drain resistance of FET.

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Do you know

• Behavior of FET channel.

• Effect of channel width on working of FET.

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JUNCTION FIELD EFFECT TRANSISTOR

DEVICE CIRCUIT SYMBOL

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Drain characteristics of FET

• Source :It is the terminal from


which the majority carriers enter
the bar.

• Drain : It is the terminal from


which the majority carriers leave
the bar.

• Gate: The two sides of a N-type


bar contains heavily doped P-
region called gate.

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Drain characteristics of FET

• The gate and channel


form a P-N junction.

• Circuit Symbols: Arrow


indicates direction of
current flowing.

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Circuit diagram for Drain characteristics of

N-Channel FET
- (0-10) mA
+
D Id

+
G Vds
- _ VDD
Vgs S (0-30) V (0-30) V
VGG
+ (0-10) V
(0-10) V

CIRCUIT DIAGRAM

8
Drain characteristics of FET

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Working principle of JFET using simulation

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Drain characteristics of FET

• Fig. shows the drain


characteristics of N-
channel JFET.

• The variation of drain


current Id, with Drain to
source voltage Vds is
plotted for different values
of Vgs.

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Drain characteristics of FET

• Let us consider the curve


for Vgs = 0. When Vds =
0, Id is also zero.

• When Vds is increased,


small drain current flows.

• This current produce


small voltage drop along
the channel.

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Drain characteristics of FET

• This reverse biases the


gate-channel junctions by
a small amount causing
little penetration of
depletion region into the
channel.

• This does not cause


much effect on the
channel resistance.

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Drain characteristics of FET

• At the initial stage,


current Id varies almost
linearly with Vds. A

• This region is called


“Channel ohmic region”
(from point O to A)
because the channel o

behaves as a resistance

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Drain characteristics of FET

• After the channel ohmic


region, when Vds is
increased the current Id
doesn’t increase with
Vds.

• That is maintains a
constant value

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Drain characteristics of FET

• The drop along the


channel which provides
more reverse bias for the
junctions causing
considerable penetration
by the depletion regions.

• Due to this the


resistance of the channel
is increased which
causes decrease in drain
current Id.
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Drain characteristics of FET

• Therefore even though


the current is increased
by increase in Vds.

• it is again reduced by the


increase in reverse bias
of the junctions.

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Drain characteristics of FET

• At one stage, a saturation


level of Id is reached
where it maintains an
almost constant value.

• The drain current at this


point (A) is known as
drain-source saturation
current, designated as
Idss.

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Drain characteristics of FET

• The value of Vds at which Id


levels off is called “Pinch Off A
Voltage” (Vp).

• The region of the curve for


which Id is almost constant
is called “Pinch Off Region”.
O

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Ohmic Pinch-off Breakdown
region region region

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Drain characteristics of FET

• When Vds is increased beyond a certain level, the gate-


channel junctions break down and the drain current
shoots to a high value and the device may be destroyed.

• This region is called ‘Avalanche Bread down Region’


For normal applications this region is to be avoided.

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Drain characteristics of FET

• When a negative voltage is


applied to the gate, it causes
more reverse bias for the
junctions than Vgs = 0.

• Therefore pinch off and


breakdown occurs for small
values of Vds as shown in
the fig.

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Drain characteristics of FET

• It is to be noted that when


Vgs is made negative, the
curve is shifted down-
ward .

• The saturation drain


current becomes smaller
due to the narrow
conducting channel.

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Summary

• At the initial stage of the characteristic the current Id


varies almost linearly with Vds.

• The linear portion of the characteristic is called ohmic


region.

• When Vds is increased beyond a certain level, the gate-


channel junctions break down and the drain current
shoots to a high value and the device may be destroyed.

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Quiz

• 1) The drain resistance is the ratio of

(a) The change in VGS to IG at constant VDS

(b) The change in VDS to IG at constant VGS

(c) The change in VDS to ID at constant VGS

(d) The change in VDS to IG at constant VGS


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Frequently asked questions

3. Explain the drain characteristics of JFET?

5. Draw the drain characteristics of JFET and mark the


linear region ,saturation region and break down region?

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