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# DEPARTMENT OF TECHNICAL

EDUCATION,A.P.
Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code :EE-305
Topic : Special devices
Duration : 50Mts.
Sub Topic : Drain characteristics of FET
Teaching Aids : Diagrams

EE-305.47
Recap

EE-305.47 2
Objectives

## • Upon completion of this period the student will be

able to know

• On condition of FET.

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Do you know

## • Effect of channel width on working of FET.

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JUNCTION FIELD EFFECT TRANSISTOR

## DEVICE CIRCUIT SYMBOL

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Drain characteristics of FET

## • Source :It is the terminal from

which the majority carriers enter
the bar.

## • Drain : It is the terminal from

which the majority carriers leave
the bar.

## • Gate: The two sides of a N-type

bar contains heavily doped P-
region called gate.

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Drain characteristics of FET

## • The gate and channel

form a P-N junction.

## • Circuit Symbols: Arrow

indicates direction of
current flowing.

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Circuit diagram for Drain characteristics of

N-Channel FET
- (0-10) mA
+
D Id

+
G Vds
- _ VDD
Vgs S (0-30) V (0-30) V
VGG
+ (0-10) V
(0-10) V

CIRCUIT DIAGRAM

8
Drain characteristics of FET

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Working principle of JFET using simulation

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Drain characteristics of FET

## • Fig. shows the drain

characteristics of N-
channel JFET.

## • The variation of drain

current Id, with Drain to
source voltage Vds is
plotted for different values
of Vgs.

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Drain characteristics of FET

## • Let us consider the curve

for Vgs = 0. When Vds =
0, Id is also zero.

## • When Vds is increased,

small drain current flows.

## • This current produce

small voltage drop along
the channel.

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Drain characteristics of FET

## • This reverse biases the

gate-channel junctions by
a small amount causing
little penetration of
depletion region into the
channel.

## • This does not cause

much effect on the
channel resistance.

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Drain characteristics of FET

## • At the initial stage,

current Id varies almost
linearly with Vds. A

## • This region is called

“Channel ohmic region”
(from point O to A)
because the channel o

behaves as a resistance

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Drain characteristics of FET

## • After the channel ohmic

region, when Vds is
increased the current Id
doesn’t increase with
Vds.

• That is maintains a
constant value

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Drain characteristics of FET

## • The drop along the

channel which provides
more reverse bias for the
junctions causing
considerable penetration
by the depletion regions.

## • Due to this the

resistance of the channel
is increased which
causes decrease in drain
current Id.
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Drain characteristics of FET

## • Therefore even though

the current is increased
by increase in Vds.

## • it is again reduced by the

increase in reverse bias
of the junctions.

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Drain characteristics of FET

## • At one stage, a saturation

level of Id is reached
where it maintains an
almost constant value.

## • The drain current at this

point (A) is known as
drain-source saturation
current, designated as
Idss.

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Drain characteristics of FET

## • The value of Vds at which Id

levels off is called “Pinch Off A
Voltage” (Vp).

## • The region of the curve for

which Id is almost constant
is called “Pinch Off Region”.
O

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Ohmic Pinch-off Breakdown
region region region

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Drain characteristics of FET

## • When Vds is increased beyond a certain level, the gate-

channel junctions break down and the drain current
shoots to a high value and the device may be destroyed.

## • This region is called ‘Avalanche Bread down Region’

For normal applications this region is to be avoided.

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Drain characteristics of FET

## • When a negative voltage is

applied to the gate, it causes
more reverse bias for the
junctions than Vgs = 0.

## • Therefore pinch off and

breakdown occurs for small
values of Vds as shown in
the fig.

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Drain characteristics of FET

## • It is to be noted that when

curve is shifted down-
ward .

## • The saturation drain

current becomes smaller
due to the narrow
conducting channel.

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Summary

## • At the initial stage of the characteristic the current Id

varies almost linearly with Vds.

region.

## • When Vds is increased beyond a certain level, the gate-

channel junctions break down and the drain current
shoots to a high value and the device may be destroyed.

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Quiz

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