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DEPARTMENT OF TECHNICAL

EDUCATION,A.P.
Name : B.RAJARAO
Designation : Lecturer
Branch : Electronics & communication Engg
Institute : Govt. Polytechnic, Visakhapatnam
Year/Semester : III Semester
Subject : Electronics -I
Subject Code : EE-305
Topic : Special devices
Duration : 50Mts.
Sub Topic : Transfer characteristics of FET
Teaching Aids : Diagrams

EE-305.48
Recap

• Already we discussed about the drain characteristics of


FET.

• Functions of Drain, Source and Gate terminals of FET.

• Working principle of FET .

EE-305.48 2
Objectives

• Upon completion of this period the student will be able to


know

• On condition of FET.

• The Transfer characteristics of FET.

• The amplification factor of FET.

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Do you know

• Behavior of FET channel.

• Effect of channel width on working of FET.

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Junction field effect transistor

DEVICE CIRCUIT SYMBOL

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Transfer characteristics of FET

• Source :It is the terminal from


which the majority carriers enter
the bar.

• Drain : It is the terminal from


which the majority carriers leave
the bar.

• Gate: The two sides of a N-type


bar contains heavily doped P-
region called gate.

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Transfer characteristics of FET

• The gate and channel


form a P-N junction.

• Circuit Symbols: Arrow


indicates direction of
current flowing.

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Working principle of JFET using simulation

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Circuit diagram for Transfer characteristics
of N-Channel FET
- (0-10) mA
+
D Id

+
G Vds
- _ VDD
Vgs S (0-30) V (0-30) V
VGG
+ (0-10) V
(0-10) V

CIRCUIT DIAGRAM

9
Transfer characteristics of FET

• Fig. shows the transfer


characteristics of
N-channel JFET.

• The variation of drain


current ID, with Gate to
Source voltage VGS is
plotted for constant value of
VDS.

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Transfer characteristics of FET

• The curve is plotted


between gate to source Id
voltage Vgs, and drain
current Id as shown in fig.

-3 -2 -1 0
Vgs

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Transfer characteristics of FET

Idss
• Drain current decreases
with the increase in – ve
gate to source bias. Id

Vp
• Drain current Id=Idss
,when Vgs= 0 -3 -2 -1 0
Vgs

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Transfer characteristics of FET

Idss

• Drain current Id =0 Id

when Vgs= Vp

Vp
-3 -2 -1 0
Vgs

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Transfer characteristics of FET

• Drain resistance rd: It is defined as the ratio of change in


drain- source voltage to change in drain current at
constant Gate –source voltage.

• rd = Δ Vds/ Δ Ids

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Transfer characteristics of FET

• Trans conductance gm : It is defined as the ratio of


change in drain current to corresponding change in Gate
–source voltage at constant drain- source voltage.

• gm = Δ Id / Δ Vgs

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Transfer characteristics of FET
• Amplification factor µ:It is defined as the ratio of change
in drain- source voltage to corresponding change in Gate
–source voltage at constant drain current .

µ = Δ Vds / Δ Vgs at constant Id.

= Δ Vds / Δ Id * Δ Id/Vgs

= rd * gm

= rd gm
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Summary

• The trans conductance is defined as the ratio of change


in drain current to change in gate to source voltage at
constant drain to source voltage.

• The amplification factor of FET is product of drain


resistance and trans conductance.

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Quiz

• 1) The trans conductance is the ratio of

(a) The change in VGS to IG at constant VDS

(b) The change in VDS to IG at constant VGS

(c) The change in ID to VGS at constant VDS

(d) The change in VDS to IG at constant VGS


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Frequently asked questions

1. Draw the transfer characteristics of JFET?

3. Define drain resistance , trans conductance


and amplification factor?

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