What Are Diodes Made Out Of? What Are Diodes Made Out Of?

W W SiIicon (Si) and Germanium (Ge) are the two most SiIicon (Si) and Germanium (Ge) are the two most
common singIe eIements that are used to make Diodes. common singIe eIements that are used to make Diodes.
A compound that is commonIy used is GaIIium A compound that is commonIy used is GaIIium
Arsenide (GaAs), especiaIIy in the case of LEDs Arsenide (GaAs), especiaIIy in the case of LEDs
because of it's Iarge bandgap. because of it's Iarge bandgap.
W W SiIicon and Germanium are both group 4 eIements, SiIicon and Germanium are both group 4 eIements,
meaning they have 4 vaIence eIectrons. Their meaning they have 4 vaIence eIectrons. Their
structure aIIows them to grow in a shape caIIed the structure aIIows them to grow in a shape caIIed the
diamond Iattice. diamond Iattice.
W W GaIIium is a group 3 eIement whiIe Arsenide is a group GaIIium is a group 3 eIement whiIe Arsenide is a group
5 eIement. When put together as a compound, GaAs 5 eIement. When put together as a compound, GaAs
creates a zincbIend Iattice structure. creates a zincbIend Iattice structure.
W W In both the diamond Iattice and zincbIend Iattice, each In both the diamond Iattice and zincbIend Iattice, each
atom shares its vaIence eIectrons with its four cIosest atom shares its vaIence eIectrons with its four cIosest
neighbors. This sharing of eIectrons is what uItimateIy neighbors. This sharing of eIectrons is what uItimateIy
aIIows diodes to be buiId. When dopants from groups aIIows diodes to be buiId. When dopants from groups
3 or 5 (in most cases) are added to Si, Ge or GaAs it 3 or 5 (in most cases) are added to Si, Ge or GaAs it
changes the properties of the materiaI so we are abIe changes the properties of the materiaI so we are abIe
to make the P to make the P- - and N and N- -type materiaIs that become the type materiaIs that become the
diode. diode.
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
Si Si
+4 +4
The diagram above shows the The diagram above shows the
2D structure of the Si crystaI. 2D structure of the Si crystaI.
The Iight green Iines The Iight green Iines
represent the eIectronic represent the eIectronic
bonds made when the vaIence bonds made when the vaIence
eIectrons are shared. Each Si eIectrons are shared. Each Si
atom shares one eIectron with atom shares one eIectron with
each of its four cIosest each of its four cIosest
neighbors so that its vaIence neighbors so that its vaIence
band wiII have a fuII 8 band wiII have a fuII 8
eIectrons. eIectrons.
N N- -Type MateriaI Type MateriaI
N N- -Type MateriaI: Type MateriaI:
When extra vaIence eIectrons are introduced When extra vaIence eIectrons are introduced
into a materiaI such as siIicon an n into a materiaI such as siIicon an n- -type type
materiaI is produced. The extra vaIence materiaI is produced. The extra vaIence
eIectrons are introduced by putting eIectrons are introduced by putting
impurities or dopants into the siIicon. The impurities or dopants into the siIicon. The
dopants used to create an n dopants used to create an n- -type materiaI type materiaI
are Group V eIements. The most commonIy are Group V eIements. The most commonIy
used dopants from Group V are arsenic, used dopants from Group V are arsenic,
antimony and phosphorus. antimony and phosphorus.
The 2D diagram to the Ieft shows the extra The 2D diagram to the Ieft shows the extra
eIectron that wiII be present when a Group V eIectron that wiII be present when a Group V
dopant is introduced to a materiaI such as dopant is introduced to a materiaI such as
siIicon. This extra eIectron is very mobiIe. siIicon. This extra eIectron is very mobiIe.
+4 +4 +4 +4
+5 +5
+4 +4
+4 +4 +4 +4 +4 +4
+4 +4 +4 +4
PP- -Type MateriaI Type MateriaI
PP- -Type MateriaI: Type MateriaI:
PP- -type materiaI is produced when the dopant type materiaI is produced when the dopant
that is introduced is from Group III. Group that is introduced is from Group III. Group
III eIements have onIy 3 vaIence eIectrons III eIements have onIy 3 vaIence eIectrons
and therefore there is an eIectron missing. and therefore there is an eIectron missing.
This creates a hoIe (h+), or a positive charge This creates a hoIe (h+), or a positive charge
that can move around in the materiaI. that can move around in the materiaI.
CommonIy used Group III dopants are CommonIy used Group III dopants are
aIuminum, boron, and gaIIium. aIuminum, boron, and gaIIium.
The 2D diagram to the Ieft shows the hoIe The 2D diagram to the Ieft shows the hoIe
that wiII be present when a Group III dopant that wiII be present when a Group III dopant
is introduced to a materiaI such as siIicon. is introduced to a materiaI such as siIicon.
This hoIe is quite mobiIe in the same way the This hoIe is quite mobiIe in the same way the
extra eIectron is mobiIe in a n extra eIectron is mobiIe in a n- -type materiaI. type materiaI.
+4 +4 +4 +4
+3 +3
+4 +4
+4 +4 +4 +4 +4 +4
+4 +4 +4 +4
The PN Junction The PN Junction
Steady State Steady State
1 1
PP
nn
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
- - - - - - - - - - - -
+ + + + + + + + + + + +
+ + + + + + + + + + + +
+ + + + + + + + + + + +
+ + + + + + + + + + + +
+ + + + + + + + + + + +
Na Na Nd Nd
MetaIIurgicaI MetaIIurgicaI
Junction Junction
Space Charge Space Charge
Region Region ionized ionized
acceptors acceptors
ionized ionized
donors donors
EE- -FieId FieId
++ ++
_ _ _ _
h+ drift h+ drift h+ diffusion h+ diffusion e e- - diffusion diffusion e e- - drift drift == ==
The PN Junction The PN Junction
Steady State Steady State
PP
nn
- - - - - - - - - -
- - - - - - - - - -
- - - - - - - - - -
- - - - - - - - - -
+ + + + + + + + + +
+ + + + + + + + + +
+ + + + + + + + + +
+ + + + + + + + + +
Na Na Nd Nd
MetaIIurgicaI MetaIIurgicaI
Junction Junction
Space Charge Space Charge
Region Region ionized ionized
acceptors acceptors
ionized ionized
donors donors
EE- -FieId FieId
++ ++
_ _ _ _
h+ drift h+ drift h+ diffusion h+ diffusion e e- - diffusion diffusion e e- - drift drift == == == ==
When no externaI source When no externaI source
is connected to the pn is connected to the pn
junction, diffusion and junction, diffusion and
drift baIance each other drift baIance each other
out for both the hoIes out for both the hoIes
and eIectrons and eIectrons
Space Charge Region: Space Charge Region: AIso caIIed the depIetion region. This region incIudes AIso caIIed the depIetion region. This region incIudes
the net positiveIy and negativeIy charged regions. The space charge region the net positiveIy and negativeIy charged regions. The space charge region
does not have any free carriers. The width of the space charge region is does not have any free carriers. The width of the space charge region is
denoted by W in pn junction formuIa's. denoted by W in pn junction formuIa's.
MetaIIurgicaI Junction: MetaIIurgicaI Junction: The interface where the p The interface where the p- - and n and n- -type materiaIs meet. type materiaIs meet.
Na & Nd: Na & Nd: Represent the amount of negative and positive doping in number of Represent the amount of negative and positive doping in number of
carriers per centimeter cubed. UsuaIIy in the range of 10 carriers per centimeter cubed. UsuaIIy in the range of 10
15 15
to 10 to 10
20 20
..
The Biased PN Junction The Biased PN Junction
PP nn
++
_ _
AppIied AppIied
EIectric FieId EIectric FieId
MetaI MetaI
Contact Contact
"Ohmic "Ohmic
Contact" Contact"
(Rs~0) (Rs~0)
++
_ _
VV
appIied appIied
I I
The pn junction is considered biased when an externaI voItage is appIied. The pn junction is considered biased when an externaI voItage is appIied.
There are two types of biasing: Forward bias and Reverse bias. There are two types of biasing: Forward bias and Reverse bias.
These are described on then next sIide. These are described on then next sIide.
The Biased PN Junction The Biased PN Junction
Forward Bias: Forward Bias:
In forward bias the depIetion region shrinks sIightIy in In forward bias the depIetion region shrinks sIightIy in
width. With this shrinking the energy required for width. With this shrinking the energy required for
charge carriers to cross the depIetion region decreases charge carriers to cross the depIetion region decreases
exponentiaIIy. Therefore, as the appIied voItage exponentiaIIy. Therefore, as the appIied voItage
increases, current starts to fIow across the junction. increases, current starts to fIow across the junction.
The barrier potentiaI of the diode is the voItage at which The barrier potentiaI of the diode is the voItage at which
appreciabIe current starts to fIow through the diode. appreciabIe current starts to fIow through the diode.
The barrier potentiaI varies for different materiaIs. The barrier potentiaI varies for different materiaIs.
Reverse Bias: Reverse Bias:
Under reverse bias the depIetion region widens. This Under reverse bias the depIetion region widens. This
causes the eIectric fieId produced by the ions to canceI causes the eIectric fieId produced by the ions to canceI
out the appIied reverse bias voItage. A smaII Ieakage out the appIied reverse bias voItage. A smaII Ieakage
current, Is (saturation current) fIows under reverse bias current, Is (saturation current) fIows under reverse bias
conditions. This saturation current is made up of conditions. This saturation current is made up of
eIectron eIectron- -hoIe pairs being produced in the depIetion hoIe pairs being produced in the depIetion
region. Saturation current is sometimes referred to as region. Saturation current is sometimes referred to as
scaIe current because of it's reIationship to junction scaIe current because of it's reIationship to junction
temperature. temperature.
VV
appIied appIied
> 0 > 0
VV
appIied appIied
< 0 < 0
Properties of Diodes Properties of Diodes
Figure 1.10 Figure 1.10 - - The Diode Transconductance Curve The Diode Transconductance Curve
2 2
W W VV
D D
= Bias VoItage = Bias VoItage
W W II
D D
= Current through = Current through
Diode. I Diode. I
D D
is Negative is Negative
for Reverse Bias and for Reverse Bias and
Positive for Forward Positive for Forward
Bias Bias
W W II
SS
= Saturation = Saturation
Current Current
W W VV
BR BR
= Breakdown = Breakdown
VoItage VoItage
W W VV

Barrier Potential Barrier Potential

Voltage Voltage
VV
D D
II
D D
(mA) (mA)
(nA) (nA)
VV
BR BR
~V ~V

II
SS
Properties of Diodes Properties of Diodes
The ShockIey Equation The ShockIey Equation
W W The transconductance curve on the previous sIide is characterized by The transconductance curve on the previous sIide is characterized by
the foIIowing equation: the foIIowing equation:
II
D D
= I = I
SS
(e (e
VV
D D
// VV
TT
- - 1) 1)
W W As described in the Iast sIide, I As described in the Iast sIide, I
D D
is the current through the diode, I is the current through the diode, I
SS
is is
the saturation current and V the saturation current and V
D D
is the appIied biasing voItage. is the appIied biasing voItage.
W W VV
TT
is the thermaI equivaIent voItage and is approximateIy 26 mV at room is the thermaI equivaIent voItage and is approximateIy 26 mV at room
temperature. The equation to find V temperature. The equation to find V
TT
at various temperatures is: at various temperatures is:
VV
TT
= = kT kT
qq
k = 1.38 x 10 k = 1.38 x 10
- -23 23
J/K T = temperature in KeIvin q = 1.6 x 10 J/K T = temperature in KeIvin q = 1.6 x 10
- -19 19
C C
W W is the emission coefficient for the diode. It is determined by the way is the emission coefficient for the diode. It is determined by the way
the diode is constructed. It somewhat varies with diode current. For a the diode is constructed. It somewhat varies with diode current. For a
siIicon diode siIicon diode is around 2 for Iow currents and goes down to about 1 at is around 2 for Iow currents and goes down to about 1 at
higher currents higher currents
Diode Circuit ModeIs Diode Circuit ModeIs
The IdeaI Diode The IdeaI Diode
ModeI ModeI
The diode is designed to aIIow current to fIow in The diode is designed to aIIow current to fIow in
onIy one direction. The perfect diode wouId be a onIy one direction. The perfect diode wouId be a
perfect conductor in one direction (forward bias) perfect conductor in one direction (forward bias)
and a perfect insuIator in the other direction and a perfect insuIator in the other direction
(reverse bias). In many situations, using the ideaI (reverse bias). In many situations, using the ideaI
diode approximation is acceptabIe. diode approximation is acceptabIe.
ExampIe: Assume the diode in the circuit beIow is ideaI. Determine the ExampIe: Assume the diode in the circuit beIow is ideaI. Determine the
vaIue of I vaIue of I
D D
if a) V if a) V
A A
= 5 voIts (forward bias) and b) V = 5 voIts (forward bias) and b) V
A A
= = - -5 voIts (reverse 5 voIts (reverse
bias) bias)
++
_ _
VV
A A
II
D D
R R
S S
= 50 = 50
a) With V a) With V
A A
> 0 the diode is in forward bias > 0 the diode is in forward bias
and is acting Iike a perfect conductor so: and is acting Iike a perfect conductor so:
II
D D
= V = V
A A
/R /R
SS
= 5 V / 50 = 5 V / 50 = 100 mA = 100 mA
b) With V b) With V
A A
< 0 the diode is in reverse bias < 0 the diode is in reverse bias
and is acting Iike a perfect insuIator, and is acting Iike a perfect insuIator,
therefore no current can fIow and therefore no current can fIow and II
D D
= 0. = 0.
Diode Circuit ModeIs Diode Circuit ModeIs
The IdeaI Diode with The IdeaI Diode with
Barrier PotentiaI Barrier PotentiaI
This modeI is more accurate than the simpIe This modeI is more accurate than the simpIe
ideaI diode modeI because it incIudes the ideaI diode modeI because it incIudes the
approximate barrier potentiaI voItage. approximate barrier potentiaI voItage.
Remember the barrier potentiaI voItage is the Remember the barrier potentiaI voItage is the
voItage at which appreciabIe current starts to voItage at which appreciabIe current starts to
fIow. fIow.
ExampIe: To be more accurate than just using the ideaI diode modeI ExampIe: To be more accurate than just using the ideaI diode modeI
incIude the barrier potentiaI. Assume V incIude the barrier potentiaI. Assume V

= 0.3 voIts (typicaI for a = 0.3 voIts (typicaI for a

germanium diode) Determine the vaIue of I germanium diode) Determine the vaIue of I
D D
if V if V
A A
= 5 voIts (forward bias). = 5 voIts (forward bias).
++
_ _
VV
A A
II
D D
R R
S S
= 50 = 50
With V With V
A A
> 0 the diode is in forward bias > 0 the diode is in forward bias
and is acting Iike a perfect conductor and is acting Iike a perfect conductor
so write a KVL equation to find I so write a KVL equation to find I
D D
: :
0 = V 0 = V
A A
- - II
D D
R R
SS
- - VV

II
D D
= V = V
A A
- - VV

= 4.7 V = 4.7 V = 94 mA = 94 mA
R R
SS
50 50
VV

++
VV

++
Diode Circuit ModeIs Diode Circuit ModeIs
The IdeaI Diode The IdeaI Diode
with Barrier with Barrier
PotentiaI and PotentiaI and
Linear Forward Linear Forward
Resistance Resistance
This modeI is the most accurate of the three. It incIudes a This modeI is the most accurate of the three. It incIudes a
Iinear forward resistance that is caIcuIated from the sIope of Iinear forward resistance that is caIcuIated from the sIope of
the Iinear portion of the transconductance curve. However, the Iinear portion of the transconductance curve. However,
this is usuaIIy not necessary since the R this is usuaIIy not necessary since the R
FF
(forward (forward
resistance) vaIue is pretty constant. For Iow resistance) vaIue is pretty constant. For Iow- -power power
germanium and siIicon diodes the R germanium and siIicon diodes the R
FF
vaIue is usuaIIy in the vaIue is usuaIIy in the
2 to 5 ohms range, whiIe higher power diodes have a R 2 to 5 ohms range, whiIe higher power diodes have a R
FF
vaIue cIoser to 1 ohm. vaIue cIoser to 1 ohm.
Linear Portion of Linear Portion of
transconductance transconductance
curve curve
VV
D D
II
D D
VV
D D
II
D D
R R
FF
= = VV
D D
II
D D
++
VV

R R

Diode Circuit ModeIs Diode Circuit ModeIs

The IdeaI Diode The IdeaI Diode
with Barrier with Barrier
PotentiaI and PotentiaI and
Linear Forward Linear Forward
Resistance Resistance
ExampIe: Assume the diode is a Iow ExampIe: Assume the diode is a Iow- -power diode power diode
with a forward resistance vaIue of 5 ohms. The with a forward resistance vaIue of 5 ohms. The
barrier potentiaI voItage is stiII: V barrier potentiaI voItage is stiII: V

= 0.3 voIts (typicaI = 0.3 voIts (typicaI

for a germanium diode) Determine the vaIue of I for a germanium diode) Determine the vaIue of I
D D
if if
VV
A A
= 5 voIts. = 5 voIts.
++
_ _
VV
A A
II
D D
R R
S S
= 50 = 50
VV

++
R R
FF
Once again, write a KVL equation Once again, write a KVL equation
for the circuit: for the circuit:
0 = V 0 = V
A A
- - II
D D
R R
SS
- - VV

- - II
D D
R R
FF
II
D D
= V = V
A A
- - VV

= 5 = 5 - - 0.3 = 85.5 mA 0.3 = 85.5 mA

R R
SS
+ R + R
FF
50 + 5 50 + 5
Diode Circuit ModeIs Diode Circuit ModeIs
VaIues of ID for the Three Different Diode Circuit ModeIs VaIues of ID for the Three Different Diode Circuit ModeIs
IdeaI Diode ModeI
IdeaI Diode ModeI
with Barrier
PotentiaI VoItage
IdeaI Diode ModeI
with Barrier PotentiaI
and Linear Forward
Resistance
100 mA 94 mA 85.5 mA
These are the vaIues found in the exampIes on previous These are the vaIues found in the exampIes on previous
sIides where the appIied voItage was 5 voIts, the barrier sIides where the appIied voItage was 5 voIts, the barrier
potentiaI was 0.3 voIts and the Iinear forward resistance potentiaI was 0.3 voIts and the Iinear forward resistance
vaIue was assumed to be 5 ohms. vaIue was assumed to be 5 ohms.
The Q Point The Q Point
The operating point or Q point of the diode is the quiescent or no The operating point or Q point of the diode is the quiescent or no- -
signaI condition. The Q point is obtained graphicaIIy and is reaIIy onIy signaI condition. The Q point is obtained graphicaIIy and is reaIIy onIy
needed when the appIied voItage is very cIose to the diode's barrier needed when the appIied voItage is very cIose to the diode's barrier
potentiaI voItage. The exampIe potentiaI voItage. The exampIe
3 3
beIow that is continued on the next beIow that is continued on the next
sIide, shows how the Q point is determined using the sIide, shows how the Q point is determined using the
transconductance curve and the Ioad Iine. transconductance curve and the Ioad Iine.
++
_ _
VV
A A
= 6V = 6V
II
D D
R R
S S
= 1000 = 1000
VV

++
First the Ioad Iine is found by substituting in First the Ioad Iine is found by substituting in
different vaIues of V different vaIues of V

into the equation for I into the equation for I

D D
using using
the ideaI diode with barrier potentiaI modeI for the the ideaI diode with barrier potentiaI modeI for the
diode. With R diode. With R
SS
at 1000 ohms the vaIue of R at 1000 ohms the vaIue of R
FF
wouIdn't have much impact on the resuIts. wouIdn't have much impact on the resuIts.
II
D D
= V = V
A A
- - V V

R R
SS
Using V Using V

vaIues of 0 voIts and 1.4 voIts we obtain vaIues of 0 voIts and 1.4 voIts we obtain
II
D D
vaIues of 6 mA and 4.6 mA respectiveIy. Next vaIues of 6 mA and 4.6 mA respectiveIy. Next
we wiII draw the Iine connecting these two points we wiII draw the Iine connecting these two points
on the graph with the transconductance curve. on the graph with the transconductance curve.
This Iine is the Ioad Iine. This Iine is the Ioad Iine.
The Q Point The Q Point
II
D D
(mA) (mA)
VV
D D
(VoIts) (VoIts)
2 2
4 4
6 6
8 8
10 10
12 12
0.2 0.2 0.4 0.4 0.6 0.6 0.8 0.8 1.0 1.0 1.2 1.2 1.4 1.4
The The
transconductance transconductance
curve beIow is for a curve beIow is for a
SiIicon diode. The SiIicon diode. The
Q point in this Q point in this
exampIe is Iocated exampIe is Iocated
at 0.7 V and 5.3 mA. at 0.7 V and 5.3 mA.
4.6 4.6
0.7 0.7
5.3 5.3
Q Point: Q Point: The intersection of the The intersection of the
Ioad Iine and the Ioad Iine and the
transconductance curve. transconductance curve.
Dynamic Resistance Dynamic Resistance
The dynamic resistance of the diode is mathematicaIIy determined The dynamic resistance of the diode is mathematicaIIy determined
as the inverse of the sIope of the as the inverse of the sIope of the transconductance transconductance curve. curve.
Therefore, the equation for dynamic resistance is: Therefore, the equation for dynamic resistance is:
r r
FF
= = VV
TT
II
D D
The dynamic resistance is used in determining the voItage drop The dynamic resistance is used in determining the voItage drop
across the diode in the situation where a voItage source is across the diode in the situation where a voItage source is
suppIying a sinusoidaI signaI with a dc offset. suppIying a sinusoidaI signaI with a dc offset.
The ac component of the diode voItage is found using the The ac component of the diode voItage is found using the
foIIowing equation: foIIowing equation:
v v
FF
= = v v
ac ac
r r
FF
r r
FF
+ R + R
SS
The voItage drop through the diode is a combination of the ac and The voItage drop through the diode is a combination of the ac and
dc components and is equaI to: dc components and is equaI to:
VV
D D
= V = V

+ + v v
FF
v v
FF
= = v v
ac ac
r r
FF
= sin( = sin(wt wt) V 4.9 ) V 4.9 = 4.88 sin( = 4.88 sin(wt wt) mV ) mV
r r
FF
+ R + R
SS
4.9 4.9 + 1000 + 1000
Therefore, V Therefore, V
D D
= 700 + 4.9 sin ( = 700 + 4.9 sin (wt wt) mV (the voItage drop across the ) mV (the voItage drop across the
diode) diode)
Dynamic Resistance Dynamic Resistance
ExampIe: ExampIe: Use the same circuit used for the Q point exampIe but change Use the same circuit used for the Q point exampIe but change
the voItage source so it is an ac source with a dc offset. The source the voItage source so it is an ac source with a dc offset. The source
voItage is now, v voItage is now, v
in in
= 6 + sin(wt) VoIts. It is a siIicon diode so the barrier = 6 + sin(wt) VoIts. It is a siIicon diode so the barrier
potentiaI voItage is stiII 0.7 voIts. potentiaI voItage is stiII 0.7 voIts.
++
v v
in in
II
D D
R R
S S
= 1000 = 1000
VV

++
The DC component of the circuit is the The DC component of the circuit is the
same as the previous exampIe and same as the previous exampIe and
therefore I therefore I
D D
= = 6V 6V - - 0.7 V 0.7 V = 5.2 mA = 5.2 mA
1000 1000
r r
FF
= = VV
T T
= = 1 * 26 mV 1 * 26 mV = 4.9 = 4.9
II
D D
5.3 mA 5.3 mA
= 1 is a good approximation if the dc = 1 is a good approximation if the dc
current is greater than 1 mA as it is in this current is greater than 1 mA as it is in this
exampIe. exampIe.
Types of Diodes and Their Uses Types of Diodes and Their Uses
PN Junction PN Junction
Diodes: Diodes:
Are used to aIIow current to fIow in one direction Are used to aIIow current to fIow in one direction
whiIe bIocking current fIow in the opposite whiIe bIocking current fIow in the opposite
direction. The pn junction diode is the typicaI diode direction. The pn junction diode is the typicaI diode
that has been used in the previous circuits. that has been used in the previous circuits.
A A K K
Schematic SymboI for a PN Schematic SymboI for a PN
Junction Diode Junction Diode
PP nn
Representative Structure for Representative Structure for
a PN Junction Diode a PN Junction Diode
Zener Diodes: Zener Diodes:
Are specificaIIy designed to operate under reverse Are specificaIIy designed to operate under reverse
breakdown conditions. These diodes have a very breakdown conditions. These diodes have a very
accurate and specific reverse breakdown voItage. accurate and specific reverse breakdown voItage.
A A K K
Schematic SymboI for a Schematic SymboI for a
Zener Diode Zener Diode
Types of Diodes and Their Uses Types of Diodes and Their Uses
Schottky Schottky
Diodes: Diodes:
These diodes are designed to have a very fast These diodes are designed to have a very fast
switching time which makes them a great diode for switching time which makes them a great diode for
digitaI circuit appIications. They are very common digitaI circuit appIications. They are very common
in computers because of their abiIity to be switched in computers because of their abiIity to be switched
on and off so quickIy. on and off so quickIy.
A A K K
Schematic SymboI for a Schematic SymboI for a
Schottky Diode Schottky Diode
ShockIey ShockIey
Diodes: Diodes:
The ShockIey diode is a four The ShockIey diode is a four- -Iayer diode whiIe other Iayer diode whiIe other
diodes are normaIIy made with onIy two Iayers. diodes are normaIIy made with onIy two Iayers.
These types of diodes are generaIIy used to controI These types of diodes are generaIIy used to controI
the average power deIivered to a Ioad. the average power deIivered to a Ioad.
A A K K
Schematic SymboI for a Schematic SymboI for a
four four- -Iayer ShockIey Diode Iayer ShockIey Diode
Types of Diodes and Their Uses Types of Diodes and Their Uses
Light Light- -Emitting Emitting
Diodes: Diodes:
Light Light- -emitting diodes are designed with a very Iarge emitting diodes are designed with a very Iarge
bandgap so movement of carriers across their bandgap so movement of carriers across their
depIetion region emits photons of Iight energy. depIetion region emits photons of Iight energy.
Lower bandgap LEDs (Light Lower bandgap LEDs (Light- -Emitting Diodes) emit Emitting Diodes) emit
infrared radiation, whiIe LEDs with higher bandgap infrared radiation, whiIe LEDs with higher bandgap
energy emit visibIe Iight. Many stop Iights are now energy emit visibIe Iight. Many stop Iights are now
starting to use LEDs because they are extremeIy starting to use LEDs because they are extremeIy
bright and Iast Ionger than reguIar buIbs for a bright and Iast Ionger than reguIar buIbs for a
reIativeIy Iow cost. reIativeIy Iow cost.
A A K K
Schematic SymboI for a Schematic SymboI for a
Light Light- -Emitting Diode Emitting Diode
The arrows in the LED The arrows in the LED
representation indicate representation indicate
emitted Iight. emitted Iight.
Types of Diodes and Their Uses Types of Diodes and Their Uses
Photodiodes: Photodiodes:
WhiIe LEDs emit Iight, Photodiodes are sensitive to WhiIe LEDs emit Iight, Photodiodes are sensitive to
received Iight. They are constructed so their pn received Iight. They are constructed so their pn
junction can be exposed to the outside through a junction can be exposed to the outside through a
cIear window or Iens. cIear window or Iens.
In Photoconductive mode the saturation current In Photoconductive mode the saturation current
increases in proportion to the intensity of the increases in proportion to the intensity of the
received Iight. This type of diode is used in CD received Iight. This type of diode is used in CD
pIayers. pIayers.
In PhotovoItaic mode, when the pn junction is In PhotovoItaic mode, when the pn junction is
exposed to a certain waveIength of Iight, the diode exposed to a certain waveIength of Iight, the diode
generates voItage and can be used as an energy generates voItage and can be used as an energy
source. This type of diode is used in the source. This type of diode is used in the
production of soIar power. production of soIar power.
A A K K
A A K K
Schematic SymboIs for Schematic SymboIs for
Photodiodes Photodiodes
22