ELECTRONIC DEVICES AND CIRCUITS 1

(LECTURES)

INTRODUCTION TO ELECTRONICS
Electronics study of electrons Voltage electric pressure Atom the smallest particle of an element that retains the characteristics of that element. Each of the known 109 elements has atoms that are different from about of all other elements. Protons positively charged Neutrons uncharged particles Electrons negatively charged 1.836 electron 1 proton

Positive Ion losses electron; Negative ion gain electron Valence electrons electrons that are in orbits farther from the nucleus have higher energy and are less tighly band the atom that those closer to the nucleus Valence shell outermost shell Valence electron electrons in the valence shell Free electron the escaped valence electron losses energy and falls into the outer shell of a neutral atom, the atom becomes a negative ion (ionization) Number of Electrons in Each Shell n shell number Ne 2n2

Semiconductor, Insulator, and Conductors

Conductor (1-3 Valence Electron) Material that easily conducts electrical current The best conductor are single elements material such as copper, silver, gold, and aluminum Current electrons that are free, moves in the same direction Insulator (5-8 Valence Electron) A material that does not conduct electric current under normal conditions Good insulators are compounds Valence electrons are lightly band to the atoms with very few electrons Semiconductor (4 Valence Electron) Materials between conductors and insulators Most common semiconductors are silicon, germanium and carbon

Energy Bands When an electron acquires additional energy, it can leave the valence shell, becomes a free electron and exist as conduction band Energy Gap Difference in energy between valence band and conduction band Once in the conduction band the electron is free to move throughout the material

*Silicon and Germanium common semiconductors *Silicon most widely used material in diodes

silicon atoms shares an electron with each other Silicon 0.7V(On Condition) Germanium 0.3V(On Condition)

Conduction in Semiconductors

Conduction in Electron and Holes

Hole neutral; vacancy when electron jumps to the conduction band Free electrons also called conduction elements Energy band diagram for an unexcited atom in a pure silicon crystal. There are no electrons in the conduction band

Recombination when a conduction band electron loses energy and falls back into a hole in the valence band Doping adding impurities to the intrinsic (pure) semiconductor to increase conductivity *Categories are n-type and p-type Pentavalent five valence electrons, Phosphorous(P), Arsenic(As), Antimony(Sb), Bismuth(Bi)

n--type electrons are majority charge carriers, holes are minority n-type - electrons p-type holes

Trivalent Three valence electrons Boron(B), Indium(In), Gallium(Ga)

Acceptor atom trivalent atom takes an electron

The Diode
A semiconductor device that allow current to flow in one direction A p-type material consists of silicon atoms and trivalent impurity A n-type material consists of silicon and pentavalent impurity PN Junction a piece of intrinsic material that is doped and formed at the boundary between two regions Unidirectional device

Depletion Region region near the pn junction where charge carriers are depleted due to the difference across the junction. Barrier potential the potential difference of the electric field across the depletion region is the amount of voltage required to move electrons through the electric field Biasing a Diode Forward Biasing condition that allows current through the pn junction Forward bias on Reverse bias - off Barrier Potential triggering voltage Silicon 06V 0.8V

Electron current flow of free electron Hole current effective flow of holes Electron flow (-) to (+) Convention flow (+) to (-) Reverse Bias conditions that essentially prevents current through the diode A diode connected for reverse bias. A limiting resistor is shown although it is not important in reverse bias because there is essentially no current Reverse Circuit the extremely small current that exists in the reverse bias after the reverse bias the transition current disappear

Forward Current current when a forward bias voltage is applied across a diode

Forward voltage (Vf) Barrier Potential Dynamic Resistance resistance change as you have along the V-I curve

V-I characteristic curve for a reverse biased diode

The complete V-I characteristic curve

Diode Models
Diode a single pn junction which is conductive contacts wire leads connected to each region p-type anode n-type - cathode

(a)Forward bias when the positive (b)Reverse bias when the terminal of the source is connected negative terminal of the source to the anode is connected to the anode

Ideal Diode Model Is a simple switch It acts like a closed (on) switch in forward bias Acts like an open (off) switch in reverse bias

Complete Diode Model Consists of a barrier potential, small forward resistance (rd) and a larage internal resistance (rR)

Example: Determine the forward voltage and forward current for the diode a) For each of the diode models, also dind the voltage across the limiting resistor in each case assume rd=10 at the determined value of forward current b) Determine the reverse voltage and reverse current for the diode, for each of the diode models. Also find the voltages across the limiting resistor in each case. Assume IR=1 A.

Testing a Diode
A good diode will show an extremely high resistance (ideally open) with reverser bias and very low resistance with forward bias A defective diode will show an extremely high resistance (or open) for both forward and reverse bias A defective shorted/resistive diode will show zero or a low resistance for both forward or reverse bias

Half Wave Rectifier

Converts the standard 110V to 60Hz into constant DC voltage. Rectifiers can be either a half wave or full wave rectifier. Basic DC Power Supply Converts the standard 110V to 60Hz into constant DC voltage Rectifiers can be either a half wave or full wave rectifier Converts AC pulsating DC Regulates and maintain a constant DC voltage for variation in the input line or load

Resistors are devices that provide a certain amount of resistance. They are specifically designed to limit the current.

Average value of the Half-wave output voltage

Effect of Barrier Potential

Peak Inverse Voltage Equals the peak value of the input voltage and the diode must be capable of withstanding this amount of repetitive reverse voltage PIV = Vp(sec) Ideal PIV = Vp(sec) Practical

Example: Draw the output voltage of each rectifier for the indicated input voltages. The IN4001 & IN 4003 are specified rectifier diodes.

5V 0.7V = 4.3V 100V 0.7V = 99.3V

Example: Determine the peak value of the output voltage if the turns ration is 0.5

Vp(out) = Vp(sec) 0.7 Vp(sec) = nVp(pri) = 0.5(170) Vp(sec) = 85 0.7 = 84.3

Half Wave Rectifier with Transformer coupled Input Voltage

Full Wave Rectifier

Effect of the turns ratio on the Output Voltage

PIV of Full Wave (Center Tapped Rectifier)

Full Wave Bridge Rectifier

Power Supply Filter A power supply filter eliminates fluctuation in the output voltage of a half wave or full wave rectifier and provides a constant DC level Filtering necessary for a constant source of DC voltage to provide power and biasing for proper operation Ripple small amount of fluctuations in the filter Filter a capacitor connected from the rectifier output to the ground

 Electrolytic(polarized) capacitor

Ripple Voltage the variation in the capacitor voltage due to charging and discharging a. Larger ripple less effective filtering b. Smaller ripple more effective filtering

Voltage Regulators Prevents changes in the filtered DC voltage due to variations in the input voltage or load Most regulators are integrated circuit and have three terminals input form

Diode Limiter or Clipper

If R1 is small compared to Rl, then Vout=Vin

Biased Limiter Connect a Vbias in series with diode to clip input voltage

Example: Combining a positive limiter with a negative limiter, determine the output voltage waveform

Diode Clampers
Adds a DC level to a DC voltage Also known as DC restorers

Example: What is the output voltage that you expect to observe across R2 in the clamping circuit? Assure that RC is large enough to prevent significant capacitor discharge.

Voltage Multipliers
Uses clamping action to increase peak rectified voltages without increasing the input transformers voltage rating Uses in high voltage, low current applications Half Wave Voltage Doubler Clamping action can be used to increease peak rectified voltage Once C1 and C2 charges to increase peak voltage, they act like two(charges) batteries in series, effectively doubling the voltage output

Zener Diode
A type of voltage regulator for providing stable reference voltage for use in power supplies, voltmeter and other instruments A silicon pn junction device that is designed for peration in the reverse breakdown region Zener Breakdown Occurs in a zener diode at low reverse voltages Heavily doped due to breakdown Commercially available at 1.8V to 200V with tolerances from 1% to 20%

Breakdown Characteristics
As the reverse voltage is increased the reverse current remains extremely small up to the knee of the curve

Zener Regulation Ability to keep the reverse voltage across its terminals essentially constant is the key feature of the zener diode Acts as voltage regulator because it maintians a nearly constant voltage across its terminals over a specified range

Example a) For a zener diode determine Vl, Vr, Iz & Pz b) Repeat (a) with Rl = 3k

Bipolar Junction Transistor

Transistor Invented by Bell laboratories Two basic types BJT and FET Constructed with three doped semiconductor regions separated by two PN junctions The three regions are called: emitter, base, and collector

Bipolar Junction Transistor

Schematic Diagram

PNP

NPN

Linear Region Operation Base emitter Junction forward Biased Base collector Junction reversed Biased Cut-off Base emitter junction reversed biased Base collector junction Reversed biased

BJT (Circuits of Operation)

Transistor Saturation
Saturation - where levels have reached their maximum values - such conditions are authorized because the base collector junction is no longer reversed - biased and the output amplified signal is distorted. Icsat = VCC / RC

LOAD LINE ANALYSIS

Emitter Stabilized Circuit

SATURATION LEVEL Apply a short between collector emitter terminals

Example: If VCC = 20V, RC is 2k; and RE is 1k;. Determine the saturation. IC = 20 / ( 2+1 ) = 6.67mA

VOLTAGE DIVIDER BIAS

Approximate Analysis

Using the previous example. Repeat the analysis using approximate technique and compare solution for ICQ and VceQ. VB = [3.9 / (39+3.9)] 22 = 2V VE = 2 0.7 = 1.3V IE = 1.3 / 1.5 = 0.867 VCE = 22 - 0.867 (10+1.5) = 12.03V

DC Bias with Voltage Feedback

to improve level of stability VCC IC RC IB RB VBE IE RE = 0 VCC IE RC IB RB VBE IE RE = 0 VCC VBE = IB [RC (F+1) +RE (F+1)+ RB ] VCC VBE = IB + (F+1) (RC + RE ) IB = (VCC VBE ) / [RB + F(RC + RE )]

Collector-emitter Loop

Saturation Condition

Field Effect Transistor

- A three terminal device used for variety of applications - voltage controlled device - Amplifier device

Field Effect Transistor n-channel Electron dependent P-channel Hole dependent An electric field is established by the charges present that will control the conduction part of the output circuit without the need for the direct contact between the controlling and controlled quantities. Metal oxide semiconductor field effect transistor

Drain (D), Source (S), and Gate (G)

Pinch-off If is increased to a level where it appears that the two depletion regions maintains a saturation level dues not drop off at pinch off and maintains the saturation level

Maximum Drain Current for a JFET and is defined by conditions VGS=0V and VDS>IVpI

Shockleys equation

Transfer characteristics for BJT

Where:

- constant - control variable

Where:

- constant - control variable

ID = 0mA VGS = VP

When: VGS = 0V VGS = VP ID = IDSS ID = 0mA ID=IDSS If VGS=0V ID=0mA If VGS=VP If

Relationships

If BJT

Ex. Sketch the transfer curve defined by IDSS = 12 mA and Vp = - 6V.

ID =
I

( 1 - VGS /Vp )2

If ID = IDSS / 2 VGS = Vp (1 - IDSS / 2IDSS )

D / IDSS = ( 1 - VGS /Vp )

VGS /Vp = 1 - ID / IDSS VGS = Vp (1 - ID / IDSS ) VGS = Vp (1 - I/ 2 ) 0.3 Vp

Sketch the transfer curve with a P channel with IDSS = 4 mA Vp = 3V ID = IDSS /4 = 4mA /4 ID = 1 mA VGS = Vp / 2 = 3 V/2 = 1.5 V ID = IDSS /2 = 4 mA/2 ID = 2 mA VGS = 0.3(3) = 0.9 V

VDS = VD Vs VDS = VD VDD IDRD VDS = 0 VDS = VDD - IDRD

Ic = 0A

VGS = - VGG VGS = VG VS VGS = VG

Self Bias Configuration

VRS = IS Rs VRS = IS Rs

- VGS VRS = 0 VGS = VRS

VGS = IDRS

Since VGS = - 1pRs

ID = IDSS( 1 - VGS /Vp )-2 = IDSS( 1 - -ID RS / VP )2 ID = IDSS( 1 + ID RS / VP )2 If ID = IDSS /2 VGS = IDSS RS / 2

VDD IDRD VDS ISRS = 0 VDD IDRD VDS IDRS = 0 VDS = VDD ID (RD + RS ) VS = VRS = IDRS VG = 0V VDS = VD VS VD = VS + VDS = VDD - VRP

Determine the ff. for the network: a) VGSQ d) VS b) IDG e) VG c) VDS f) VD IDSS = 8mA VP = 8V

IDSS /4 = 8 mA /4 = 2 mA Vp / 2 = -6 / 2 = -3 V IDSS / 2 = 8 mA / 2 = 4 mA Vp = 0.3 Vp = 0.3(-6V) = - 1.8 V ID = IDSS/4 = 8mA/4 = 2mA VGS = VP/2 = -6/2 = -3

Voltage-divider Bias

Formulas: Getting VD VD = VDD IDRD Getting VG VG = ( R2 / R1 + R2 )VDD Getting VGS VGS = VG IDRS Getting VDS VDS = VDD ID (RD + RS)

DEPLETION type MOSFETs (D MOSFETS)

Permits operating points with positive values of And levels of That exceed

EXAMPLE 1. For an n-channel Depletion type MOSFET determine and

2.) Determine the following for the network. (a) IDQ and VGSQ (b) VD

Group 1: Abad, Joseph Alas, Meldeev Mark Aldea, Rene Apolinario, Darwin Aquino, Jhana Kimberly Section: EC31FB1 Instructor: Engr. Ryann A. Alimuin