EE8407

Power Converter Systems

Graduate Course EE8407

Topic 2

Bin Wu

PhD, PEng

Professor
ELCE Department Ryerson University

Contact Info
Office: ENG328 Tel: (416) 979-5000 ext: 6484 Email: bwu@ee.ryerson.ca http://www.ee.ryerson.ca/~bwu/

Ryerson Campus
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

EE8407

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Topic 2 High-Power Semiconductor Devices

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Lecture Topics
Power Diode SCR Thyristor Gate Turn-Off Thyristor (GTO) Integrated Gate Commutated Thyristor (GCT) Insulated Gate Bipolar Transistor (IGBT) Switch Series Operation

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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High-Power Semiconductor Devices

Device Rating
V (V) 12000

SCR

12000V/1500A (M itsubishi)

10000 6500V/600A (Eupec)

7500V/1650A (Eupec) 6000V/3000A (ABB)

27M VA SCR: GTO/GCT: 36M VA 6M VA IGBT:

8000

6500V/4200A (ABB)

6000V/6000A (M itsubishi)

6000
6500V/1500A (Mitsubishi)

GTO/GCT

4000
4500V/900A (Mitsubishi)

3300V/1200A (Eupec) 2500V/1800A (Fuji)

4800V 5000A (Westcode)

2000

1700V/3600A (Eupec)

IGBT
0 0 1000 2000 3000 4000 5000 6000 I (A)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode

4500V/800A press pack and 1700V/1200A module diodes

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Power Diode
Heatsink Assembly
P P Heatsink P

A B C N N (a) Diode Rectifier (b) Press pack N (c) Module Vd A A

Press pack device: Double sided cooling Low assembly cost and high power density Preferred choice for high voltage high power applications
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor

4500V/800A and 4500V/1500A SCRs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor
Switching Characteristics
iG 0 . 1I GM iT I GM

iT
0 .9 I D 0 .1I D ID I rr VD

t rr
0 .1I rr Q rr

iG

vT
t

vT
V on

0 .1V D

t don t r t on

t off
Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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SCR Thyristor
Main Specifications
12000V/1500A SCR Thyristor
Maximum Rating Switching Characteristics V DRM 12000V Turn-on Time V RRM 12000V Turn-off Time t off ! 1200Q s I TAVM 1500A di T /dt 100 A / Q s I TRMS 2360A dv T /dt 2000V / Q s Q rr 7000Q C

t on ! 14Q s

V DRM Repetitive peak off-state voltage I TAVM Maximum average on-state current Qrr ! t rr I rr Reverse recovery Charge 2

V RRM Repetitive peak reverse voltage I RRMS Maximum rms on-state current Part number FT1500AU-240 (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

4500V/800A and 4500V/1500A GTOs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Symmetrical versus Asymmetrical GTOs
Type Blocking Voltage
V RRM V DRM

Example
(6000V GTOs)

Applications For use in voltage source inverters with anti-parallel diodes. For use in current source inverters.

Asymmetrical GTO

V DRM ! 6000V V RRM ! 22V V DRM ! 6000V VRRM ! 6500V

Symmetrical GTO

V RRM } V DRM

VDRM - Maximum repetitive peak (forward) off-state voltage V RRM - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Switching Characteristics
vT , iT vT 0 .9V D iT

0 .9 I D ID 0 .1I D

VD
0

0 .1V D

t t don t r t doff tf t tail iT iG vT t

IG 2M

iG

diG 1 / dt
I G 1M

0 . 1I G 1 M

0 .1I G 2 M

diG 2 / dt

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Gate Turn-Off (GTO) Thyristor

Main Specifications
4500V/4000A Asymmetrical GTO Thyristor
Maximum Rating
V DRM V RRM I TGQM I TAVM I TRMS

di G2 /dt 40 A / Q s

Switching Characteristics

4500V Turn-on Switching

t don ! 2.5Q s t r ! 5.0Q s

17V Turn-off Switching t doff ! 25.0 Q s

4000A
diT /dt 500 A / Q s

1000A
dv T /dt 1000V / Q s

1570A
di G1 /dt 40 A / Q s

t f ! 3.0Q s

On-state Voltage

VT ( on  state ) ! 4.4V at I T ! 4000 A V RRM - Repetitive peak reverse voltage I TAVM - Maximum average on-state current

V DRM - Repetitive peak off-state voltage I TGQM - Repetitive controllable on-state current I RRMS - Maximum rms on-state current

Part number - 5SGA 40L4501 (ABB)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor (GCT)

6500V/1500A Symmetrical GCT

GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

GCT Classifications
Anti-parallel Diode Excluded Blocking Voltage
V RRM V DRM

Type

Example
(6000V GCT)

Applications For use in voltage source inverters with anti-parallel diodes. For use in voltage source inverters. For use in current source Inverters.

Asymmetrical GCT Reverse Conducting GCT Symmetrical GCT (Reverse Blocking)

V DRM ! 6000V V RRM ! 22V V DRM ! 6000V VDRM ! 6000V V RRM ! 6500V

Included Not required

V RRM } 0 V RRM } V DRM

V DRM - Maximum repetitive peak forward off-state voltage V RRM - Maximum repetitive peak reverse voltage

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

Switching Characteristics
vT , iT

vT
0 .9V D VD
0

iT
0 .9 I D ID 0 .4 I D

0 .1V D

t t doff tf iG
iT vT

t don iG
0

tr iG

diG 1 / dt

t vG
diG 2 / dt vG

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Integrated Gate Commutated Thyristor

Main Specifications
6000V/6000A Asymmetrical GCT
Maximum Rating
V DRM V RRM I TQRM I TAVM I TRMS

di G2 /dt

Switching Characteristics On-state Voltage

6000V Turn-on Switching

t don 1.0 Q s 2.0Q s

22V Turn-off Switching

6000A
di T /dt 1000 A / Q s

2000A
dv T /dt 3000V / Q s

3100A
di G1 /dt 200 A / Q s

t doff

3.0 Q s

tr

t f - N/A
4V at I T ! 6000 A

10,000 A/ Qs

VT ( on state)

V DRM - Repetitive peak off-state voltage I RRMS - Maximum rms on-state current

V RRM - Repetitive peak reverse voltage

I TGRM - Repetitive controllable on-state current I TAVM - Maximum average on-state current

Part number FGC6000AX120DS (Mitsubishi)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

1700V/1200A and 3300V/1200A IGBT modules

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

IGBT Characteristics
iC
G E IC VGE 5 V GE 4 V GE 3 VGE 2 V GE 1
0

vG

vCE

+15V 0

v GE
0

90% +15V

iC
90%

10%

2V

VCE
t don t r t doff tf

Static V-I Characteristics

Switching characteristics
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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Insulated Gate Bipolar Transistor (IGBT)

Main Specifications
3300V/1200A IGBT
Maximum Rating Switching Characteristics
V CE IC I CM

3300V

1200A

2400A

t don
0.35 Q s

tr
0.27 Q s

t doff
1.7 Q s

tf
0.2 Q s

Saturation I CE sat ! 4.3V at I C ! 1200 A Voltage VCE - Rated collector-emitter voltage

I C - Rated dc collector current I CM - Maximum repetitive peak collector current

Part number FZ1200 R33 KF2 (Eupec)

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Cause of Voltage Imbalance
Type Static Voltage Sharing Causes of Voltage Imbalance
(I lk Device off-state leakage current

v1

S1

(T j Junction temperature
( t don Turn-on delay time

( t doff Device
(Qrr

Turn-off delay time Reverse recovery charge of anti-parallel diode Junction temperature

v2

S2
Dynamic Voltage Sharing

(T j

( t GDon Gate driver turn-on delay time

v3

S3

Gate Driver

( t GDoff Gate driver turn-off delay time

(Lwire Wiring inductance between the

the gate driver and the device gate

( Differences between series connected devices.

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Equal Voltage Sharing
S1 , S2 , S3 :

v1

S1

Rs Cs

GTO, GCT or IGBT

Rv

Voltage Sharing:

v2

S2

v1 = v2 = v3
Rv

in steady state

Rs Cs

and transients Static Voltage Sharing:

v3

S3

Rs Cs

Rv

Rv
Dynamic Voltage Sharing: Rs and Cs

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Device Series Operation

Active Overvoltage Clamping (AOC)
- Suitable for series IGBTs - Not applicable to GCTs
v in
Active Overvoltage Clamping
Vm

Gate Signal Conditioning

S1 Amp Rg AOC
Vm

v CE 1

S2 Rg

Vm iC

v CE 1 v CE 2

Gate Signal Conditioning

Amp

v CE 2

Assumption: S1 is turned off earlier than S2

t

td

VCE1 is clamed to Vm due to active clamping.

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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Summary
Item
Maximum switch power (Device V v I ) Active di/dt and dv/dt control Active short circuit protection Turn-off (dv/dt) snubber Turn-on (di/dt) snubber Parallel connection Switching speed Behavior after destruction On-state losses Switching losses Gate Driver Gate Driver Power Consumption

GTO
36MVA No No Required Required No Slow Shorted Low High Complex, separate High

IGCT
36MVA No No Not required Required No Moderate Shorted Low Low Complex, integrated High

IGBT
6MVA Yes Yes No required No required Yes Fast Open in most cases High Low Simple, compact Low

Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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Textbook: Bin Wu, High-Power Converters and AC Drives, Wiley - IEEE Press, 2006

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