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Gunn Diode
GUNN DIODE
Definition: Such type of semiconductor device which have only N type doped (semiconductor) material, is called Gunn Diode. Its a unique component. Gunn Diode is also known as: Transferred Electron Device (TED). Microwave Semiconductor Device.
Construction: Gunn diodes are fabricated from a single piece of n-type semiconductor,
Source Material:
Tri-methylgallium and arsenic (10% in H2). Most Common Materials : Gallium Arsenide (GaAs) and Indium Phosphide (InP).
Middle area (Active layer) has a doping level between 1014 cm-3 to 1016 cm-3 .
density
n = 1.3x10 ^18 cm-.
frequency required.
Requirements:
Gallium arsenide for frequencies up to 200 GHz, Gallium nitride can reach up to 3 THz.
GUNN DIODE
(a)
GUNN DIODE
Gunn Effect
As
voltage on the Gunn diode is as illustrated in figure. The diode is said to be biased into the negative resistance region.
CHANGE IN ENERGY
R= RL + R(V)
WHEN
R
>0
WHEN
<0
COAXIAL CAVITY
In this case, each diode induced fluctuation travels up the cavity and reflected from the far end, returning to the diode after a time
that.
waves
n=1
The system won't oscillate at a lower frequency because the cavity is too short to permit it. It can't oscillate at a higher frequency because the diode is too slow,
Real Gunn devices have a response time which varies with the applied voltage, hence we can electronically tune the oscillation frequency by slightly adjusting the bias voltage
GUNN DIODE
Construction It only consists of N type semiconductor material It has N+ n N+ material No depletion region is formed
It consists of P & N type semiconductor material It has P type,N type and depletion region between these materials
GUNN DIODE
Applications
A Gunn diode can be used to amplify signals because of the apparent "negative resistance". Gunn diodes are commonly used as a source of high frequency and high power signals
Anti-lock brakes Sensors for monitoring the flow of traffic Pedestrian safety systems
MOTION DETECTOR
GUN OSCILLATOR
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