Beruflich Dokumente
Kultur Dokumente
Summer 2003
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
Molecular Electronics
The US Air Force/Westinghouse project in 1959 came to nothing, because they couldnt work out how to achieve their goal. Researchers from Hewlett-Packard and the University of California, Los Angeles, announced in July 1999 that theyve actually made logic circuits that use molecular level chemical processes. These rely on organic molecules called rotaxanes that contain a ring of atoms threaded on a central molecule, like a bead on a wire, with blocking elements at each end to keep it on. Indeed, the new era of moletronics is beckoning just as silicon-era technologists are reaching their own stunning levels of transistor density. [New York Times, July 1999] The field of molecular electronicsmoletronicsis growing fast, and while researchers are keeping their feet on the ground for now, the ideas are flowing thick and fast. [Personal Computer World. Nov. 1999]
http://www.quinion.com/words/turnsofphrase/tp-mol1.htm
Molecular Amplifier
The graphical view illustrates the C60 amplifier: an electrical signal through STM tip, C60 molecule and copper surface (left) is amplified by about five times when the tip is lowered by the tenth of a nanometer, which requires only 10 mV (right)
*The scientific report "An electromechanical amplifier using a single molecule" was published in Chemical Physics Letters, Vol. 265, Nos. 3-5, page 353, February 7, 1997. http://www.zurich.ibm.com/news/97/n-19970307-01.html
DARPA Moletronics
Logic Devices -The design, synthesis, and testing of two interconnected molecular logic gates connected to the outside world, which produce a correct truth table. The devices must operate at room temperature, and the demonstrated configuration must be scaleable to densities of greater than 10 12 gates per square centimeter. Memory Devices -The design, synthesis, and testing of low-power, highspeed circuit architectures for high-density, terabit-level memories based on molecular electronic devices. The devices must have a functional 16-bit molecular memory connected to the outside world at a density of 10 15 bits per cubic centimeter. The molecular memory must be capable of performing a storage function at room temperature that is bistable and reversibly driven from one state to the other by an outside signal.
http://www.darpa.mil/MTO/mole/
http://cbd.cos.com/cgi-bin/eps/spg/ODA/DARPA/CMO/BAA03-12/listing.html?notice=MOD
http://cmliris.harvard.edu/html_natalya/research/device/device8.jpg
T. Rueckes, K. Kim, E. Joselevich, G.Y. Tseng, C.-L. Cheung, and C.M. Lieber "Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing", Science 289, 94-97 (2000). http://cmliris.harvard.edu/html_natalya/research/device/device.html
http://cmliris.harvard.edu/html_natalya/research/device/device2.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device3.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device5.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device6.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device9.jpg
Envisioned as arising from the interplay of the elastic energy, which produces a potential energy minimum at finite separation (when the upper nanotube is freely suspended), and the attractive van der Waals (vdW) energy, which creates a second energy minimum when the suspended SWNT is deflected into contact with the lower nanotube.
These two minima correspond to well-defined OFF and ON states, respectively; that is, the separated upper-to-lower nanotube junction resistance will be very high, while the contact junction resistance will be orders of magnitude lower.
http://cmliris.harvard.edu/html_natalya/research/device/device.html
http://cmliris.harvard.edu/html_natalya/research/device/device12.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device14.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device13.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device7.jpg
http://cmliris.harvard.edu/html_natalya/research/device/device15.jpg
IBM team made a " voltage inverter " Aug 26, 2001
Atomic Force Microscope image showing the design of an intra-molecular logic gate. A single carbon nanotube (shaded in blue) is positioned over gold electrodes to produce two p-type carbon nanotube field-effect transistors in series. The device is covered by an insulated layer (called PMMA) and a window is opened by ebeam lithography to expose part of the nanotube. Potassium is then evaporated through this window to convert the exposed p-type nanotube transistor into an n-type nanotube transistor, while the other nanotube transistor remains p-type.
Characteristics of the resulting intra-molecular voltage inverter. Open red circles are raw data for five different measurements on the same device (V=2V). The blue line is the average of these five measurements. The thin straight line corresponds to an output/input gain of one.
http://researchweb.watson.ibm.com/resources/news/20010827_logiccircuit.shtml
Dekker's group made their SET of one nanometer wide and 20 nanometers long. They used the tip of an atomic force microscope to put sharp bends in a single carbon nanotube. These bends served the same purpose as the barriers regulating the number of electrons passing through the carbon nanotube SET.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/nanotubes.htm
IBM, 20020930
Researchers take a crystal of silicon carbide and heat it to about 1600 degrees centigrade in a vacuum. The heat causes the silicon to evaporate and the silicon's absence frees the carbon atoms to bond with other atoms. They bond to neighboring carbon atoms forming fragments of graphite which curl up to form nanotube seeds that grow with the addition of new carbon atoms. At the high temperature of the experiment it was found that the nanotubes become mobile and align themselves with the crystallographic structure of the substrate. Atonomic resolution STM image of a single carbon nanotube
http://www.research.ibm.com/resources/news/20020930_nanotube.shtml
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/nanotubes.htm
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/nanotubes.htm
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/nanotubes.htm
http://nemo.physics.ncsu.edu/~nardelli/My%20Papers/science.pdf
Schematic of experiment. (left) A conducting AFM tip is used to measure the resistance of the NT-HOPG interface. (right) View of the interface from inside the tube. (B) The NT is in registry. Notice the ordered AB stacking of graphite lattices. In this geometry, the electronic wave function of allowed states in the NT (along tube axis) and the graphite (zigzag directions) are parallel. (C) The NT is out of registry. The NT Fermi-level States (dotted arrow) are no longer parallel to those in the graphite (solid arrow), and the momentum mismatch causes an increased interface resistance.
http://nemo.physics.ncsu.edu/~nardelli/My%20Papers/science.pdf
http://nemo.physics.ncsu.edu/~nardelli/My%20Papers/science.pdf
Buckyball-filled nanotube
The metallofullerenes (Gd@C82) and single-walled carbon nanotubes (SWNTs) were first formed. The nanotube was heated in dry air at 420 degrees Celsius to open both ends of the nanotube. The Gd@C82, once heated to a vapor, readily entered the opened tubes, and lined up inside the tubes at roughly 1 nanometer intervals.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/nanotubes.htm
Nanotube electronics
Semiconducting with bandgap ~20 meV to ~2eV Metallic capable of sustaining hundreds times electrical current than a metal
Can be a superconductor
Strong electro-mechanical coupling properties beyond electronics: Mechanically many times stronger than steel, but a few times lighter. Thermally more conductive than most crystals. Upon charge injection length changes much more than piezoelectrics does (not piezoelectricity).
http://optics.org/articles/news/9/5/5/1
http://www.cise.columbia.edu/NSEC/Downloads/NSECnanotech.pdf
Nanopore
Nanopore is a nanoscale metal / self-assembled monolayer / metal heterostructure. It provides well defined, stable and reproducible metallic contacts to a SAM within nanoscale area. Compared to STM and MCB, devices of this type are intrinsically stable and can be easily loaded into cryogenic systems and measurements at different temperatures can be easily carried out.
http://www.eng.yale.edu/reedlab/research/measure/mol_measure.html#nanopore
http://www.eng.yale.edu/posters150/pdf/reed4.pdf
http://www.eng.yale.edu/reedlab/research/measure/mol_measure.html#nanopore
The connections between three benzene rings, in which the orbitals overlapped (were conjugated) throughout, were made structurally weak, so that slight twists or kinks weakened or strengthened the conjugation of the orbitals. To the center benzene ring in the molecule, NO2 and NH2 groups were added, projecting outward from the string on opposite sides of the center ring. This asymmetrical configuration left the molecule with a strongly perturbed electron cloud. That asymmetric, perturbed cloud in turn made the molecule very susceptible to distortion by an electric field: applying an electric field to the molecule twisted it. Every time when a voltage is applied to the molecule, an electric field was set up that twisted the molecule and blocked current flow. With the voltage removed, the molecule sprang back to its original shape, and the current flowed again. This three-benzene-ring molecule acts like a voltage controlled switch.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/molec_computer.htm
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/molec_computer.htm
The methods used to produce molecular devices are the same as those of the pharmaceutical industry. Chemists start with a compound and then gradually transform it by adding prescribed reagents whose molecules are known to bond to others at specific sites.
The procedure may take many steps, but gradually the pieces come together to form a new potential molecular device with a desired orbital structure.
After the molecules are made, we use analytical technologies such as infrared spectroscopy, nuclear magnetic resonance and mass spectrometry to determine or confirm the structure of the molecules. The various technologies contribute different pieces of information about the molecule, including its molecular weight and the connection point or angle of a certain fragment. By combining the information, we determine the structure after each step as the new molecule is synthesized.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/molec_computer.htm
2. For the nitro-amine molecule, we observed strong NDR(negative differential resistance) behavior at low temperature:
Nitro-amine Molecule
3. The "nitro-only" molecule shows NDR at both low and room temperature: Nitro-only Molecule
Break Junction
A quantum point contact consisting of a few atoms can be realized with break junctions and pronounced conductance quantization is observed at room temperature. Molecules of benzene-1,4-dithiol are self-assembled onto the two facing gold electrodes of a conventional mechanically controllable break junction to form a statically stable gold-sulfur-aryl-sulfur-gold system, which allows for direct observation of charge transport through the molecules. Current-voltage I(V) measurements at room temperature demonstrate a highly reproducible apparent Coulomb blockade gap of ~0.7V. The conductance-voltage G(V) curves show two steps in both bias directions with the first step ~0.045 5S (22 M) and the second step ~0.075 5S (13.3 M).
http://www.eng.yale.edu/reedlab/research/measure/mol_measure.html#nanopore
http://www.eng.yale.edu/posters150/pdf/reed4.pdf
The molecule does not conduct electrical current well at low applied voltages. When the applied voltage is increased to a specific level, the applied electric field twists the molecule and makes it become electrically conductive.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/molec_computer.htm
http://www.eng.yale.edu/reedlab/research/measure/mol_measure.html#nanopore
Diode
Cross section schematic of the Au-SAM-Ti-Au structure which is fabricated and probed using the nanopore process.
I-V plot of the 4thioacetatebiphenyl nanopore at 300k. The prominent rectifying behavior is due to the asymmetry
The conduction path in a conventional microelectronics transistor is turned on using an applied voltage at the gate electrode. Similarly, the conduction path thru a molecular switch is turned on by an applied voltage. The applied voltage is believed to cause a conformational shift which, in concert with the charging of the molecule, opens the conduction pathway. http://www.eng.yale.edu/reedlab/research/device/mol_devices.html#memory
Switches
Using the nanopore process and a 2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1benzenethiolate SAM low
resistance (NDR) and using a 4,4'-di(ethynylphenyl)-2'-nitro-1benzenethiolate SAM room temperature NDR have been
demonstrated. These devices work as two terminal switches: at
a specific applied voltage current will flow (device ON) at all other voltage values current does not flow (device OFF). Molecules:
2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1-benzenethiolate ("nitroamine" for short):
I-V plot of nitro-amine nanopore at 60K. Shows very strong NDR with a peak to valley ratio of 1000:1 and a current density of 50 Amps/cm2.
I-V plot of nitro nanopore at 300K. Shows NDR with a peak to valley ratio of 1.5:1 and a current density of 16 Amps/cm2.
http://www.eng.yale.edu/reedlab/research/device/mol_devices.html#memory
Series of room temperature I-V characteristics of a Au/biphenyldinitro SAM/Au device. The 1st sweep shows high conductivity On-state. The subsequent sweep shows low conductivity OFF-state. After a negative bias is applied, the high conductivity On-state is recovered.
http://www.eng.yale.edu/posters150/pdf/reed4.pdf
Memory Cell
Using the nanopore process and a 4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate SAM a room temperature memory cell which can be configured as a RAM is demonstrated. These are two terminal devices that can be toggled between two conductivity states. The devices are written to the low conductivity state or "1" by applying a positive bias (+1.5V) and are erased to the high conductivity state or "0" by applying a negative bias (-1.5V). A device is read by applying a positive bias and measuring the resulting current.
The Molecules:
4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate (nitro for short):
Sequential I-V plot of nitro nanopore at 300K. The first trace shows the high conductivity state (blue, "0") and the second trace shows the low conductivity state (red, "1").
http://www.eng.yale.edu/reedlab/research/device/mol_devices.html#memory
Molecular RAM:
The measured logic diagram of the molecular random access memory. The first input pulse configures the state of the cell, the second and third pulses read the cell and the fourth pulse resets the cell. These devices have been run continuously for many hours with no degradation in performance.
M. A. Reed, J. Chen, A. M. Rawlett, D. W. Price, and J. M. Tour, "Molecular random access memory cell", Appl. Phys.
Lett., 78, 3735 (2001). http://www.eng.yale.edu/reedlab/research/device/mol_devices.html#memory
Library of Molecules
Library of molecules that have been studied by the Yale University Group. Molecules of interest have various functional substitutes and end groups which affect molecular properties.
http://www.eng.yale.edu/posters150/pdf/reed4.pdf
Top: I-V characteristics of a Au-polyaniline-Au nanojunction. Bottom: Fluctuations near the onset of a switching from insulating to conducting states. The asymmetry of the fluctuation plateaus shown in the inset is due to the response of the Keithley 617 electrometer (slower than the STM preamplifier).
http://www.public.asu.edu/~ntao1/Publications/switch.pdf
Charge transport current vs electrochemical potential for polyaniline nanojunctions with two Au nanoelectrodes separated with ~50 nm (a) and ~1 nm (b and c). The bias voltage between the nanoelectrodes in each case is 20 mV.
http://www.public.asu.edu/~ntao1/Publications/switch.pdf
http://jerg.ee.psu.edu/moletronics/index.htm
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/Introduction/
http://jerg.ee.psu.edu/moletronics/index.htm
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
Self-assembly is a phenomenon in which atoms, molecules or groups of molecules arrange themselves spontaneously into regular patterns and even relatively complex systems without intervention from outside.
http://www.mtmi.vu.lt/pfk/funkc_dariniai/nanostructures/molec_computer.htm
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.trnmag.com/Stories/071801/HP_maps_molecular_memory_071801.html
http://www.cise.columbia.edu/NSEC/Downloads/NSECnanotech.pdf
http://www.phantomsnet.com/nidconference5/abstracts/Abstract_Dekker.pdf
There are basically four stages to the Technion team's lithography process. First, monomers of the protein RecA polymerize on a singlestranded DNA molecule to form a nucleoprotein filament. Then the nucleoprotein filament binds to an aldehydederivatized double-stranded DNA substrate molecule at a specific site where there is a homologous sequence. Treatment with a silver nitrate solution causes silver aggregates to form along the DNA substrate, everywhere apart from at sites protected by nucleoprotein filaments. Finally the silver aggregates act as catalysts for wet-chemical gold deposition, thus converting the unprotected regions of the substrate to conductive gold wires.
http://nanotechweb.org/articles/news/1/7/5/1
effective in achieving the positional control of nano-scale molecular memories and circuits. T.Kawai et al; Appl.Phys.Lett.,77,3848(2000), Appl.Phys.Lett., 77,3105(2000),
Surf.Sci.Lett,432,L611(1999), J.Vac.Sci.Technol.B17,1313(1999), Jpn.J.Appl.Phys. 39, 581(2000), 38,L606(1999), 38,L1211(1999)
http://www.iis.u-tokyo.ac.jp/Labs/spm/Tokyo2001/abstracts/Kawai-T.html
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
http://www.iop.org/EJ/S/UNREG/GjdY5f,DnzNFlA1BFYMkZQ/abstract/-featured=jnl/0957-4484/13/2/201
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
Thermodynamic Limit
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
Intramolecular Circuit
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
http://ej.iop.org/links/27/Arl1t9UvJOw3Mxx247ijXg/na22r1.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
http://www.nist.gov/speeches/SPIE_022601.pdf
Picotechnology?