MICROWAVE SOLID STATE DEVICES

The semiconductor devices that exhibit negative resistance are: 1. Uni Junction Transistor 2. Silicon Controlled Rectifier

3. Tunnel diode
4. Gunn diode 5. IMPATT diode 6. TRAPATT diode 7. BARIT diode

Introduction to Gunn Diode

In 1963 J. B. Gunn discovered the transferred electron mechanism, since then we are calling it as Gunn Effect. The device that uses Gunn Effect known as Gunn Diode or Transferred Electron Device. In the transferred electron mechanism, the conduction of electrons of some semiconductors is shifted from a state of high mobility to a state of low mobility by the influence of strong electric field. This process is known as Gunn Effect. During this process negative resistance occurs at some point of critical voltage.

Gunn diode basics

Gunn diode is only found in N-type semiconductor materials, so that it must be associated with electrons rather than with holes. Above some critical voltage, corresponding to an electric field of 2000~4000 V/cm, the current in every spectrum (GaAs) became a fluctuating function of time. This is known as RWH (RidleyHatkins-Hilsum) theory. This was explained by J.B. Gunn.

Gunn diode basics

Band structure of Gunn diode

Gunn diode operation

Gunn diode operation

In N-type GaAs the valence band is filled with electrons and conduction band is partly filled. The forbidden energy gap between valence band and conduction band is about 1.43 eV. In ordinary semiconductors conduction band is the highest energy band. But in N-type GaAs the conduction band consists of different energy levels. Here conduction band is referred to as central valley. Above the conduction band we have another higher empty energy band separated by 0.3 eV from conduction band. This empty energy band is referred as satellite valley. In the satellite valley mobility of electrons is less than central valley.

Gunn diode operation

Gunn diode operation

Gunn diode operation

1. On application of electric filed or voltage across the GaAs slice, electrons start travel from cathode to anode. 2. The greater the potential across the slice, the higher is the velocity of electrons and therefore greater the current. 3. Once the electrons have gained enough energy i.e. at the threshold level, they transferred to higher energy band that is to satellite valley from central valley 4. In the satellite valley electrons become less mobile and so get slowed down. Now there is a fall in current and thus negative resistance is exhibited 5. As the voltage rises further, the gradient become sufficient to remove electrons from the satellite valley so that current again starts rising with voltage