Beruflich Dokumente
Kultur Dokumente
S
UNIT-III P-N JUNCTION-1
BY:- YASHU SWAMI ASST. PROF., DEPTT. OF EE DEI, DAYALBAGH
Since potential energy = potential x charge, the curve in (d) is proportional to potential energy of hole and curve (e) is proportional to the negative of (d) curve i.e. electron.
LAW OF JUNCTION
The forward bias V lowers the barrier height and allows more carrier to cross the junction. Pn(0) depends exponentially on V Expression is given by :
Pn(0) is the hole conc. At the edge of n region (x=0) and Pno is the hole conc. Away from the Junction edge.
Fig: Minority (solid line) and majority (dashed line) Current vs. distance in pn junction.
Breakdown Region
In reverse bias voltage Vz, large reverse current flows. Diode is said to be in Break down region. The Voltage at which the diode enters the breakdown region is called as reverse voltage, breakdown voltage (Vz).
BREAKDOWN VOLTAGE
There is a limit to how much reverse voltage a diode could withstand before it is damaged. If you continue to increase the reverse voltage, you will ultimately reach the breakdown voltage of the diode, at which the component will loose its characteristics and will allow the current to flow in either directions. This voltage is termed as breakdown voltage. Breakdown voltage may go up to 40 - 50V.
Breakdown Region
CUTIN VOLTAGE
Cutin, offset, breakpoint, knee or threshold voltage is the voltage below which the current is very small (< than 1% of the max.). Beyond this voltage current rises very rapidly. For Ge, cutin Voltage = 0.2 (approximately), For Si, cutin Voltage = 0.6 (approximately).
CUTIN VOLTAGE
Logarithmic Characteristics
Log (I) = log (Io)+ 0.434V/nVT
V-I Characteristics at three different temperatures for Si diode. The shaded area indicates 25*C limits of controlled conductance.