INTRODUCTION

I-V RELATION SHIP

STRUCTURE

OPERATION

JFET
FUNCTION CURRENT DIRECTION

SYMBOL

INTRODUCTION
UNIPOLAR TRANSISTOR
Only has one charge carrier(either hole or electron)

FET FIELD EFFECT TRANSISTOR

FETs FAMILY

JFET => junction field effect transistor

IGFET => insulated gate FET

JFET doped to contain an abundance of positive charge carriers (p-type), or of negative carriers (n-type).

The JFET is a long channel of semiconductor material

Terminals to connect with the outside are usually made ohmic

JFET STRUCTURE
Ohmic contacts

Ohmic contacts

N-CHANNEL

P-CHANNEL

JFET SYMBOL

CURRENT DIRECTION OF JFET

D +

D-

I
S -

S +

JFET FUNCTION
It used in AMPLIFIER CIRCUIT It can be used as LOGIC SWITCH

JFET OPERATION
N-TYPE CHANNEL
An n-type channel is formed between two p-type layers which are connected to the gate. Majority carrier electrons flow from the source and exit the drain, forming the drain current. The pn junction is reverse biased during normal operation, and this widens the depletion layers which extend into the n channel only since the doping of the p regions is much larger than that of the n channel. As the depletion layers widen, the channel narrows, restricting current flow.

P-TYPE CHANNEL
Vice-versa

A pair of metallic contacts are placed at each end of the channel. A current can flow along the channel from one contact to the other.

charges

free to move along the channel are negatively charged(electrons). p-channel device the free charges which move from endto-end are positively charged - holes.

 Electron flow from S to D when drain-source voltage applied. Increasing the gate voltage widen the deplection region cutting down the current flow A small increase in the drain-source voltage,increase the current But any large rise also widen the deplection regionlimiting the flow

little voltage drop along the length of the channel depletion regions are parallel. vGS is increased negatively, they eventually touch reducing iD to zero called the pinch-off voltage, Vp (or vGS(off)).

Figure: n-channel JFET structure for regions.

showing parallel depletion

voltage drop along the length of the channel depletion regions are no longer parallel(closer towards the drain). As vDS is increased, they will touch (pinch-off) towards the drain drain current iD can increase no longer. At vGS-vDS=Vp threshold of pinch-off As vDS is further increased, iD remains constant JFET is in its current saturation region. .

Figure: n-channel JFET structure for regions.

showing non-parallel depletion