TIP31, TIP31A, TIP31B, TIP31C,

(NPN), TIP32, TIP32A, TIP32B,

TIP32C, (PNP)

Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching http://onsemi.com
applications.
• Collector-Emitter Saturation Voltage - 3 AMPERE
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc POWER TRANSISTORS
• Collector-Emitter Sustaining Voltage - COMPLEMENTARY
VCEO(sus) = 40 Vdc (Min) - TIP31, TIP32 SILICON
= 60 Vdc (Min) - TIP31A, TIP32A 40-60-80-100 VOLTS
= 80 Vdc (Min) - TIP31B, TIP32B 40 WATTS
= 100 Vdc (Min) - TIP31C, TIP32C
• High Current Gain - Bandwidth Product MARKING
fT = 3.0 MHz (Min) @ IC = 500 mAdc DIAGRAM
4
• Compact TO-220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS
AYWW

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Rating Symbol Value Unit TIPxxx
STYLE 1:

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Emitter Voltage TIP31, TIP32 VCEO 40 Vdc
PIN 1. BASE
TIP31A, TIP32A 60 2. COLLECTOR

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP31B, TIP32B 80 1 3. EMITTER
2 4. COLLECTOR
3

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP31C, TIP32C 100

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Base Voltage TIP31, TIP32 VCB 40 Vdc TO-220AB
TIP31A, TIP32A 60 CASE 221A-09

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP31B, TIP32B 80 STYLE 1
TIP31C, TIP32C 100

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
xxx = Specific Device Code:
Emitter-Base Voltage VEB 5.0 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
31, 31A, 31B, 31C, 32, 32A, 32B, 32C
Collector Current Continuous IC 3.0 Adc A = Assembly Location

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ Peak 5.0 Y = Year

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
WW = Work Week
Base Current IB 1.0 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Power Dissipation

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
@ TC = 25
C

ÎÎÎ
Derate above 25
C
PD
40 Watts
ORDERING INFORMATION
See detailed ordering and shipping information in the package

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
0.32 W/
C
dimensions section on page 6 of this data sheet.

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Total Power Dissipation PD
@ TA = 25
C 2.0 Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Derate above 25
C 0.016 W/
C

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Unclamped Inductive E 32 mJ

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Load Energy (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Operating and Storage Junction TJ, Tstg – 65 to
C
Temperature Range + 150
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..

 Semiconductor Components Industries, LLC, 2003 1 Publication Order Number:

January, 2003 - Rev. 8 TIP31A/D
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ Characteristic Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ
ÎÎÎÎ
Thermal Resistance, Junction to Case
RθJA
RθJC
62.5
3.125

C/W

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Emitter Sustaining Voltage (Note 2) TIP31, TIP32 VCEO(sus) 40 - Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0) TIP31A, TIP32A

ÎÎÎÎÎ
ÎÎÎ
60

ÎÎÎÎ
-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP31B, TIP32B
TIP31C, TIP32C
80
100
-
-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A, TIP32A ICEO - 0.3 mAdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) TIP31B, TIP31C, TIP32B, TIP32C - 0.3

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
Collector Cutoff Current

ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ
(VCE = 40 Vdc, VEB = 0) ÎÎÎ
ÎÎÎÎ
ÎÎÎ
TIP31, TIP32
ICES
- 200
µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 60 Vdc, VEB = 0) TIP31A, TIP32A - 200
(VCE = 80 Vdc, VEB = 0) TIP31B, TIP32B - 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(VCE = 100 Vdc, VEB = 0) TIP31C, TIP32C - 200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 1.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE 25 - -
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VCE(sat) - 1.2 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) - 1.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Current-Gain - Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT 3.0 - MHz
Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 20 - -
2. Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
7) Una de las siguientes referencias a transistores es correcta:

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:
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Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.

http://onsemi.com TIP31A/D
2
6
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

TC TA
40 4.0

PD, POWER DISSIPATION (WATTS)

TC
30 3.0

20 2.0

TA
10 1.0

0 0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)

Figure 1. Power Derating

TURN-ON PULSE VCC

APPROX 2.0
RC IC/IB = 10
+11 V
1.0 TJ = 25°C
Vin SCOPE 0.7
Vin 0 tr @ VCC = 30 V
RB 0.5
VEB(off)
t, TIME (
s)

t1
0.3 tr @ VCC = 10 V
t3 Cjd << Ceb
APPROX
+11 V t1 ≤ 7.0 ns - 4.0 V
0.1
100 < t2 < 500 µs
Vin t3 < 15 ns 0.07 td @ VEB(off) = 2.0 V
0.05
0.03
t2 DUTY CYCLE ≈ 2.0%
0.02
TURN-OFF PULSE APPROX - 9.0 V 0.03 0.05 0.1 0.3 0.5 1.0 3.0
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Equivalent Circuit Figure 3. Turn-On Time

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3
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0
0.7
D = 0.5
0.5

0.3
0.2
0.2
0.1
0.1 P(pk)
0.05 ZθJC(t) = r(t) RθJC
0.07
RθJC(t) = 3.125°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02
0.01 TJ(pk) − TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 1.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)

Figure 4. Thermal Response

10 There are two limitations on the power handling ability of

a transistor: average junction temperature and second
5.0
IC, COLLECTOR CURRENT (AMP)

breakdown. Safe operating area curves indicate IC - VCE

100µs
5.0ms limits of the transistor that must be observed for reliable
2.0 operation; i.e., the transistor must not be subjected to greater
1.0ms dissipation than the curves indicate.
1.0 SECONDARY BREAKDOWN
The data of Figure 5 is based on TJ(pk) = 150
C; TC is
LIMITED @ TJ ≤ 150°C
THERMAL LIMIT @ TC = 25°C variable depending on conditions. Second breakdown pulse
0.5
(SINGLE PULSE) limits are valid for duty cycles to 10% provided TJ(pk)
BONDING WIRE LIMIT
150
C. TJ(pk) may be calculated from the data in
0.2 CURVES APPLY TIP31A, TIP32A Figure 4. At high case temperatures, thermal limitations will
BELOW RATED VCEO TIP31B, TIP32B
TIP31C, TIP32C
reduce the power that can be handled to values less than the
0.1 limitations imposed by second breakdown.
5.0 10 20 50 100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0 300
2.0 IB1 = IB2
TJ = +
25°C
ts′ IC/IB = 10
ts′ = ts − 1/8 tf 200
1.0 tf @ VCC = 30 V TJ = 25°C
0.7
CAPACITANCE (pF)

0.5
t, TIME (s)
µ

0.3 tf @ VCC = 10 V 100

Ceb
0.2
70
0.1
0.07 50 Ccb
0.05
0.03 30
0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40
IC, COLLECTOR CURRENT (AMP) VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn-Off Time Figure 7. Capacitance

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 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500 2.0

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

300 TJ = 150°C VCE = 2.0 V TJ = 25°C
1.6
hFE, DC CURRENT GAIN

25°C
100
1.2 IC = 0.3 A 1.0 A 3.0 A
70 −
55 °C
50

30 0.8

0.4
10
7.0
5.0 0
0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (mA)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.4 +
2.5

θV, TEMPERATURE COEFFICIENTS (mV/°C)

TJ = 25°C +
2.0 *APPLIES FOR IC/IB ≤ hFE/2
1.2
+
1.5 TJ = −
65°C TO +
150°C
1.0 +
1.0
V, VOLTAGE (VOLTS)

0.8 +
0.5 *θVC FOR VCE(sat)

VBE(sat) @ IC/IB = 10 0
0.6 −
0.5
VBE @ VCE = 2.0 V
0.4 −
1.0
−
1.5 θVB FOR VBE
0.2 VCE(sat) @ IC/IB = 10
−
2.0
0 −
2.5
0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages Figure 11. Temperature Coefficients

R BE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)

103 107
VCE = 30 V VCE = 30 V
102 IC = 10 x ICES
IC, COLLECTOR CURRENT (A)

106
µ

TJ = 150°C
101
IC ≈ ICES
105
100 100°C

104 IC = 2 x ICES
10−1 REVERSE FORWARD

10−2 25°C 103 (TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)
ICES
10−3 102
−
0.4 −
0.3 −
0.2 −
0.1 0 +
0.1 +
0.2 +
0.3 +
0.4 +
0.5 +
0.6 20 40 60 80 100 120 140 160
VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C)

Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance

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5
 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

ORDERING INFORMATION
Device Package Shipping
TIP31 TO-220AB 50 Units/Rail
TIP31A TO-220AB 50 Units/Rail
TIP31B TO-220AB 50 Units/Rail
TIP31C TO-220AB 50 Units/Rail
TIP32 TO-220AB 50 Units/Rail
TIP32A TO-220AB 50 Units/Rail
TIP32B TO-220AB 50 Units/Rail
TIP32C TO-220AB 50 Units/Rail

PACKAGE DIMENSIONS

TO-220AB
CASE 221A-09
ISSUE AA

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
-T- PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
STYLE 1: T 0.235 0.255 5.97 6.47
D PIN 1. BASE U 0.000 0.050 0.00 1.27
2. COLLECTOR V 0.045 −−− 1.15 −−−
N 3. EMITTER Z −−− 0.080 −−− 2.04
4. COLLECTOR

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
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SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment: JAPAN: ON Semiconductor, Japan Customer Focus Center
Literature Distribution Center for ON Semiconductor 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
P.O. Box 5163, Denver, Colorado 80217 USA Phone: 81-3-5773-3850
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Email: r14525@onsemi.com
Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada
ON Semiconductor Website: http://onsemi.com
Email: ONlit@hibbertco.com
For additional information, please contact your local
N. American Technical Support: 800-282-9855 Toll Free USA/Canada
Sales Representative.

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6