Schnelle PIN-Fotodiode

High Speed PIN-Photodiode

Lead (Pb) Free Product - RoHS Compliant

SFH 2302

Wesentliche Merkmale Features

• Speziell geeignet für Anwendungen von 400nm
bis 1050nm
• Sehr kurze Schaltzeit im spezifizierten
Wellenlängenbereich
• Sehr kurze Schaltzeit bei geringer
Sperrspannung (<5V)
• Extrem kurze Abklingzeit („slow tail“)
• 3 mm-Plastikbauform im LED-Gehäuse
• Especially suitable for applications from 400nm
to 1050nm
• Fast switching time within the specified
wavelength
• Fast switching time at low reverse voltage
(<5V)
• Ultra short decay time („slow tail“)
• 3 mm LED plastic package

Anwendungen Applications
• Optische Laufwerke (CD, DVD) • Optical Disc Drives (CD, DVD)
• Lichtschranken für Gleich- und Wechselbetrieb • Photointerrupters
• Industrieelektronik • Industrial electronics
• „Messen/Steuern/Regeln“ • For control and drive circuits
• LWL • Fibre optic transmission systems
• Abstandsmesser • Range Finders

Typ Bestellnummer
Type Ordering Code
SFH 2302 Q65110A6343

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Grenzwerte
Maximum Ratings
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
Betriebs- und Lagertemperatur Top; Tstg – 40 … + 100 °C
Operating and storage temperature range
Sperrspannung VR 15 V
Reverse voltage
Sperrspannung, t <120 s VR 20 V
Reverse voltage
Verlustleistung Ptot 150 mW
Total power dissipation
Elektrostatische Entladung ESD 2 kV
Electrostatic Discharge
Human Body Model according to EOS/ESD-5.1-1993

Kennwerte (TA = 25 °C)

Characteristics
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
min typ max
Spektrale Fotoempfindlichkeit des Chips λS max A/W
Spectral sensitivity of the chip
λ = 650nm 0.45
λ = 780nm 0.5
Fotostrom, VR = 5 V, Ee = 0.5 mW/cm2 IP µA
Photocurrent
λ = 650nm 10
λ = 780nm 11
Wellenlänge der max. Fotoempfindlichkeit λS max 820 nm
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit λ 400..1050 nm
Spectral range of sensitivity
S = 10% of Smax
Abmessung der bestrahlungsempfindlichen Fläche L × B 0.6 × 0.6 mm × mm
Dimensions of radiant sensitive area L×W
Abstand Chipoberfläche zu Gehäuseoberfläche H 2.4 … 2.8 mm
Distance chip front to case surface

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Kennwerte (TA = 25 °C)

Characteristics (cont’d)
Bezeichnung Symbol Wert Einheit
Parameter Symbol Value Unit
min typ max
Halbwinkel ϕ ± 17 Grad
Half angle deg.
Dunkelstrom, VR = 5 V IR 0.05 5 nA
Dark current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent, 10% - 90%
VR = 5 V, RL = 50 Ω; λ = 650 nm; Ip = 1 mA t r , tf 1.8 ns
VR = 5 V, RL = 50 Ω; λ = 780 nm; Ip = 1 mA t r , tf 2.0 ns
Kapazität, f = 1 MHz, E = 0, VR = 0 V C0 3 5 pF
Capacitance
Temperaturkoeffizient von IP
Temperature coefficient of IP
λ = 650 nm TCI -0.03 %/K
λ = 780 nm -0.01 %/K
Rauschäquivalente Strahlungsleistung1) 8.9 × 10-15 W
Noise equivalent power, VR = 5 V, λ = 650 nm ------------
Hz

– 15 IR
1)
NEP = 17,9 ×10 × ---------
Sλ

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Relative Spectral Sensitivity Total Power Dissipation Capacitance

Srel = f (λ) Ptot = f(TA) C0 = f (VR), E = 0
OHF00815 OHF03901
100 4
% pF
Srel 90 C

80
3
70

60

50 2
40

30
1
20

10

0
400 500 600 700 800 900 nm 1100 0 -3
λ 10 10 -2 10 -1 10 0 10 1 V 10 2
V
Dark Current Dark Current Switching Time
IR = f (VR), E = 0 IR = f (TA), E = 0, VR = 5 V tr, tf = f (VR)
OHF03904
0.12 100 OHF03917
8
nA
IR nA ns
IR tr , tf
7

10
6
0.08
5
1
0.06
4

0.04 3
0,1

2
0.02
1
0,01
25 35 45 55 65 75 °C 85
0 0
0 5 10 15 V 20 TA 0 2 4 6 8 10 12 V 16
VR VR
Directional Characteristics
Srel = f (ϕ)

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Maßzeichnung
Package Outlines

Area not flat

5.2 (0.205)
4.5 (0.177)
4.1 (0.161)
3.9 (0.154)

ø3.1 (0.122)
ø2.9 (0.114)
0.8 (0.031)
0.4 (0.016)
0.7 (0.028)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
2.54 (0.100)
spacing

3.5 (0.138) 4.0 (0.157)

3.6 (0.142)
1.8 (0.071)
1.2 (0.047) Chip position
Collector (Transistor) 29 (1.142) 6.3 (0.248)
Cathode (Diode) 27 (1.063) 5.9 (0.232)
GEOY6653

Maße in mm (inch) / Dimensions in mm (inch)

Empfohlenes Lötpaddesign Wellenlöten (TTW)

Recommended Solder Pad TTW Soldering
4.8 (0.189)

4 (0.157)
OHLPY985

Maße in mm (inch) / Dimensions in mm (inch)

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Lötbedingungen
Soldering Conditions
Wellenlöten TTW (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)

OHLY0598
300
C 10 s
Normalkurve
standard curve
T 250
235 C ... 260 C Grenzkurven
2. Welle limit curves
2. wave
200
1. Welle
1. wave
150
ca 200 K/s 5 K/s 2 K/s

100 C ... 130 C

100
Zwangskühlung
2 K/s forced cooling
50

0
0 50 100 150 200 s 250
t

Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

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