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Features
• Low forward voltage drop
Diode 1 A1
K • Very small conduction losses
Diode 2 A2 • Negligible switching losses
• Extremely fast switching
K • Low thermal resistance
• -40°C minimum operating Tj
• Insulated package: TO-220FPAB
– Insulating voltage: 2000 V DC
A2 A2
K – Capacitance: 45 pF
A1 K
A1 • ECOPACK®2 compliant component
TO-220AB TO-220FPAB
STPS20200CT STPS20200CFP
K
Description
K This device is a dual center tap 200 V Schottky
rectifier suited for switch mode power supplies
and high frequency DC to DC converters.
Packaged in TO-220AB, TO-220AB narrow-leads,
A2 A2
K TO-220FPAB and D²PAK, it is especially intended
A1 A1
for use as secondary rectification in SMPS and is
D2PAK TO-220AB also ideal for all LED lighting applications.
STPS20200CG-TR narrow leads
STPS20200CTN
IF(AV) 2 x 10 A
VRRM 200 V
Tj(max) 175 °C
VF(typ) 0.64 V
1 Characteristics
Table 2. Absolute ratings (limiting values, per diode, unless otherwise stated)
Uni
Symbol Parameter Value
t
Tj = 25 °C 15 µA
VR = VRRM
(1)
IR Reverse leakage current Tj = 125 °C 1.3 7
mA
Tj = 125 °C VR = 150 V 4.5
Tj = 25 °C 0.86 V
VF(1) Forward voltage drop IF = 10 A
Tj = 125 °C 0.64 0.70 V
Figure 1. Average forward power dissipation Figure 2. Forward voltage drop versus forward
versus average forward current (per diode) current (per diode)
PF(AV)(W) IFM(A)
10 100.0
9
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ=1 Tj = 125 °C
8 (Maximum values)
7
10.0 Tj = 125 °C Tj = 25 °C
6 (Typical values) (Maximum values)
5
Tj = 25 °C
4 (Typical values)
1.0
3
T
2
1 VFM(V)
IF(AV)(A) δ=tp/T tp
0 0.1
0 1 2 3 4 5 6 7 8 9 10 11 12 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Figure 3. Reverse leakage current versus Figure 4. Junction capacitance versus reverse
reverse voltage applied (typical values, per voltage applied (typical values, per diode)
diode)
I (mA)
1.E+01 R
C(pF)
1000
F=1MHz
Tj=150°C
VOSC=30mVRMS
Tj=25°C
1.E+00
Tj=125°C
1.E-01 Tj=100°C
Tj=75°C
100
1.E-02
Tj=50°C
1.E-03 Tj=25°C
VR(V) VR(V)
1.E-04 10
0 20 40 60 80 100 120 140 160 180 200 1 10 100 1000
0.8 0.8
0.7 0.7
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
Single pulse Single pulse
T T
0.2 0.2
0.1 0.1
tp(s) δ=tp/T tp tp(s) δ=tp/T tp
0.0 0.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
Figure 7. Thermal resistance junction to ambient versus copper surface under tab
Rth(j-a) (°C/W)
80
D²PAK
Epoxy printed circuit board FR4
70 copper thickness = 35 µm
60
50
40
30
20
10
SCu(cm²)
0
0 5 10 15 20 25 30 35 40
2 Package information
E A
Resin gate
∅P F
0.5 mm max.
protrusion(1)
Q
H1
D D1
L20 L30
b1 L1 J1
L
b
e Resin gate c
0.5 mm max.
protrusion(1)
e1
(1) Resin gate position accepted in each of the two
position shown as well as the symmetrical opposites
A
P
E F
Q
H1
D
D1
L20
L30
L1
b1(x3)
J1
L
1 2 3
e C
b (x3)
e1
A
H B
Dia
L6
L2 L7
L3
L5
D
F1
L4 F2
F E
G1
L2 16 . 0.63
E
C2
L2
D
L
L3
A1
B2
C R
B
A2
M
* V2
12.2 5.08
2.54
1.60
3.50
9.75
3 Ordering information
4 Revision history
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