2SD880

NPN Silicon Epitaxial Power Transistor

P b Lead(Pb)-Free
COLLECTOR
2
1
FEATURES: BASE
1
2
3
* Low frequency power amplifier 1. BASE
* Complement to 2SB834 2. COLLECTOR
3 3. EMITTER
EMITTER TO-220

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 60 V

Collector-emitter breakdown voltage V(BR)CEO IC=50mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 7 V
Collector cut-off current ICBO VCB=60V, IE=0 100 µA
Emitter cut-off current IEBO VEB=7V, IC=0 100 µA
DC current gain hFE VCE=5V, IC=500mA 60 300
Collector-emitter saturation voltage VCE (sat) IC=3A, IB=300mA 1 V
Base-emitter voltage VBE IC=0.5A, VCE= 5V 1 V
Transition Frequency fT VCE=5 V, IC=500mA 3 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 70 pF
Turn on time ton 0.8 µs
IB1=-IB2=0.2A, IC=2A
Storage time ts 1.5 µs
VCC=30V, PW=20µs
Fall time tf 0.8 µs

CLASSIFICATION OF hFE
Rank O Y GR

Range 60-120 100-200 150-300

WEITRON 1/3 02-Feb-07

http://www.weitron.com.tw
Free Datasheet http://www.datasheet4u.com/
 2SD880

WEITRON 2/3 02-Feb-07

http://www.weitron.com.tw
 2SD880

TO-220 Outline Dimensions unit:mm

D
A TO-220
C1 Dim M in M ax
Ø A 4.47 4.67
F
A1 2.52 2.82
B 0.71 0.91
H B1 1.37
1.17
C 0.31 0.53
E1
E C1 1.17 1.37
D 10.01 10.31
E 8.50 8.90
B1 L1 A1 E1 12.06 12.446
B G 2.54 TYP
G1
L

4.98 5.18
F 2.59 2.89
H 0.00 0.30
G C L 13.4 13.8
G1 L1 3.56 3.96
Φ 3.73 3.93

WEI TRON 3/3 02-Feb-07

http://www.weitron.com.tw