Technische Information / technical information

IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Diode Gleichrichter/ diode rectifier

Periodische Rückw. Spitzensperrspannung

Tvj =25°C VRRM 800 V
repetitive peak reverse voltage

Durchlaßstrom Grenzeffektivwert pro Chip

TC =80°C IFRMSM 58 A
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
TC =80°C IRMSmax 50 A
maximum RMS current at Rectifier output
Stoßstrom Grenzwert tP = 10 ms, T vj = 25°C IFSM 448 A
surge forward current tP = 10 ms, T vj = 150°C 358 A
2 2
Grenzlastintegral tP = 10 ms, T vj = 25°C It 1000 As
2 2
I t - value tP = 10 ms, T vj = 150°C 642 As

Transistor Wechselrichter/ transistor inverter

Kollektor-Emitter-Sperrspannung
Tvj =25°C VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC =65°C IC,nom. 15 A
DC-collector current TC = 25 °C IC 19 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, T C =65°C ICRM 30 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 60 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Wechselrichter/ diode inverter

Dauergleichstrom
IF 15 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 30 A
repetitive peak forw. current
Grenzlastintegral 2 2
2 VR = 0V, tp = 10ms, Tvj = 125°C It 25 As
I t - value

Transistor Brems-Chopper/ transistor brake-chopper

Kollektor-Emitter-Sperrspannung
Tvj =25°C VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC =65 °C IC,nom. 15 A
DC-collector current TC = 25 °C IC 19 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, T C =65°C ICRM 30 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 60 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Brems-Chopper/ diode brake-chopper

Dauergleichstrom
IF 15 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 30 A
repetitive peak forw. current

prepared by: Thomas Passe date of publication: 2003-03-26

approved by: R. Keggenhoff revision: 2.1

1(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Modul Isolation/ module isolation
Isolations-Prüfspannung RMS, f = 50 Hz, t = 1 min.
VISOL 2,5 kV
insulation test voltage NTC connected to Baseplate

Elektrische Eigenschaften / electrical properties

Charakteristische Werte / characteristic values
Diode Gleichrichter/ diode rectifier min. typ. max.
Durchlaßspannung
Tvj = 150°C, IF = 15 A VF - 0,8 - V
forward voltage
Schleusenspannung
Tvj = 150°C V(TO) - 0,61 - V
threshold voltage
Ersatzwiderstand
Tvj = 150°C rT - 11 - mΩ
slope resistance
Sperrstrom
Tvj = 150°C, VR = 800 V IR - 5 - mA
reverse current

Modul Leitungswiderstand, Anschlüsse-Chip

TC = 25°C RAA'+CC' - 11 - mΩ
lead resistance, terminals-chip

Transistor Wechselrichter/ transistor inverter min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 15 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 15 A - 2,2 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,4mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 0,8 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
VGE = 0V, Tvj =25°C, V CE = 600V ICES - - 5,0 mA
collector-emitter cut-off current
Gate-Emitter Reststrom
VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 68 Ohm td,on - 37 - ns
VGE = ±15V, Tvj = 125°C, R G = 68 Ohm - 34 - ns
Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 68 Ohm tr - 37 - ns
VGE = ±15V, Tvj = 125°C, R G = 68 Ohm - 37 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 68 Ohm td,off - 216 - ns
VGE = ±15V, Tvj = 125°C, R G = 68 Ohm - 223 - ns
Fallzeit (induktive Last) IC = INenn, V CC = 300 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 68 Ohm tf - 17 - ns
VGE = ±15V, Tvj = 125°C, R G = 68 Ohm - 26 - ns
Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 68 Ohm Eon - 0,6 - mJ
LS = 80 nH
Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 68 Ohm Eoff - 0,4 - mJ
LS = 80 nH
Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 68 Ohm
SC Data Tvj≤125°C, VCC = 360 V ISC - 60 - A
dI/dt = 1000 A/µs

2(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Elektrische Eigenschaften / electrical properties
Charakteristische Werte / characteristic values
min. typ. max.
Modulinduktivität
LσCE - - 40 nH
stray inductance module

Modul Leitungswiderstand, Anschlüsse-Chip

TC = 25°C RCC'+EE' - 10 - mΩ
lead resistance, terminals-chip

Diode Wechselrichter/ diode inverter min. typ. max.

Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 15 A VF - 1,75 2,15 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 15 A - 1,8 - V
Rückstromspitze IF=INenn, - diF/dt = 600 A/us
peak reverse recovery current VGE = -10V, Tvj = 25°C, V R = 300 V IRM - 13 - A
VGE = -10V, Tvj = 125°C, V R = 300 V - 14 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 600 A/us
recovered charge VGE = -10V, Tvj = 25°C, V R = 300 V Qr - 0,8 - µAs
VGE = -10V, Tvj = 125°C, V R = 300 V - 1,4 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 600 A/us
reverse recovery energy VGE = -10V, Tvj = 25°C, V R = 300 V Erec - 0,14 - mJ
VGE = -10V, Tvj = 125°C, V R = 300 V - 0,24 - mJ

Transistor Brems-Chopper/ transistor brake-chopper min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 15,0 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 15,0 A - 2,2 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,4mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 0,8 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
VGE = 0V, Tvj = 25°C, V CE = 600V - - 5,0 mA
collector-emitter cut-off current
Gate-Emitter Reststrom
VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA
gate-emitter leakage current

Diode Brems-Chopper/ diode brake-chopper min. typ. max.

Durchlaßspannung Tvj = 25°C, IF = 15A VF - 2,15 2,6 V
forward voltage Tvj = 125°C, IF = 15A - 2,25 - V

NTC-Widerstand/ NTC-thermistor min. typ. max.

Nennwiderstand
rated resistance TC = 25°C R25 - 5 - kΩ

Abweichung von R100

TC = 100°C, R 100 = 493 Ω ∆R/R -5 5 %
deviation of R100

Verlustleistung TC = 25°C P25 20 mW

power dissipation
B-Wert R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value

3(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Thermische Eigenschaften / thermal properties
min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ rectif. diode λPaste=1W/m*K RthJH - 1,1 - K/W
thermal resistance, junction to heatsink Trans. Wechselr./ trans. inverter λgrease=1W/m*K - 2,4 - K/W

Diode Wechselr./ diode inverter - 4,0 - K/W

Trans. Bremse/ trans. brake - 2,4 - K/W

Diode Bremse/ diode brake - 4,3 - K/W

Innerer Wärmewiderstand Gleichr. Diode/ rectif. diode RthJC - - 1 K/W
thermal resistance, junction to case Trans. Wechselr./ trans. inverter - - 2 K/W
Diode Wechselr./ diode inverter - - 2,9 K/W
Trans. Bremse/ trans. brake - - 2 K/W
Diode Bremse/ diode brake - - 3,1 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ rectif. diode λPaste=1W/m*K RthCH - 0,2 - K/W
thermal resistance, case to heatsink Trans. Wechselr./ trans. inverter λgrease=1W/m*K - 0,6 - K/W
Diode Wechselr./ diode inverter - 1,4 - K/W
Trans. Bremse/ trans. brake - 0,6 - K/W
Diode Bremse/ diode brake - 1,5 - K/W
Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature

Mechanische Eigenschaften / mechanical properties

Innere Isolation
Al2O3
internal insulation
CTI
225
comperative tracking index

Anpreßkraft f. mech. Befestigung pro Feder F 40...80 N

mounting force per clamp

Gewicht
G 36 g
weight
Kontakt - Kühlkörper Kriechstrecke
terminal to heatsink 13,5 mm
creepage distance

Luftstrecke
12 mm
clearance distance
Terminal - Terminal Kriechstrecke
terminal to terminal 7,5 mm
creepage distance

Luftstrecke
7,5 mm
clearance distance

4(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
output characteristic inverter (typical) VGE = 15 V

30

Tj = 25°C

25 Tj = 125°C

20
IC [A]

15

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

output characteristic inverter (typical) Tvj = 125°C

30
VGE = 8V
VGE = 9V
25
VGE = 10V
Vge=12V
Vge=15V
20
Vge=20V
IC [A]

15

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00

VCE [V]

5(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
transfer characteristic inverter (typical) VCE = 20 V

30

Tj = 25°C
Tj = 25°C
25

20
IC [A]

15

10

0
6,00 7,00 8,00 9,00 10,00 11,00 12,00 13,00

VGE [V]

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)

forward characteristic of FWD inverter (typical)

30
Tj = 25°C
Tj = 125°C
25

20
IF [A]

15

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00

VF [V]

6(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 300 V

switching losses inverter (typical) Tj = 125°C, V GE = ±15 V, RGon = RGoff = 68 Ohm

Eon
Eoff
2,5
Erec

2
E [mWs]

1,5

0,5

0
0 5 10 15 20 25 30

IC [A]

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)

switching losses inverter (typical) Tj = 125°C, V GE = +-15 V , I c = Inenn , VCC = 300 V

Eon
2,5 Eoff
Erec

2
E [mWs]

1,5

0,5

0
60 80 100 120 140 160 180 200 220

RG [Ω]

7(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Transienter Wärmewiderstand Wechselr. ZthJH = f (t)
transient thermal impedance inverter

10,000

Zth-IGBT
Zth-FWD
ZthJH [K/W]

1,000

i 1 2 3 4
IGBT: ri [K/W]: 156,8e-3 616,5e-3 784,7e-3 842e-3
i [s]: 3e-6 10,16e-3 78,72e-3 225,6e-3
FWD: r i [K/W]: 261,3e-3 1,31 1,03 1,4
i [s]: 3e-6 78,7e-3 10,2e-3 225,6e-3
0,100
0,001 0,01 0,1 1 10

t [s]

Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)

reverse bias save operating area inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 68 Ohm

35

30

IC,Modul
25
IC,Chip

20
IC [A]

15

10

0
0 100 200 300 400 500 600 700

VCE [V]

8(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)
output characteristic brake-chopper-IGBT (typical) VGE = 15 V

30

Tj = 25°C
25 Tj = 125°C

20
IC [A]

15

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00

VCE [V]

Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)

forward characteristic of brake-chopper-FWD (typical)
30

Tj = 25°C

25 Tj = 125°C

20
IF [A]

15

10

0
0 0,5 1 1,5 2 2,5 3

VF [V]

9(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
forward characteristic of rectifier diode (typical)

30

Tj = 25°C
25 Tj = 150°C

20
IF [A]

15

10

0
0,00 0,20 0,40 0,60 0,80 1,00 1,20

VF [V]

NTC- Temperaturkennlinie (typisch) R = f (T)

NTC- temperature characteristic (typical)

100000
Rtyp

10000
R[Ω]

1000

100
0 20 40 60 80 100 120 140

TC [°C]

10(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Vorläufig
preliminary
Schaltplan/ circuit diagram

Gehäuseabmessungen/ package outlines

Bohrplan /
drilling layout

11(12)
Technische Information / technical information
IGBT-Module
IGBT-Modules FB15R06KL4B1
Gehäuseabmessungen Forts. / package outlines contd.

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine

Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes

12(12)
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