Technische Information / Technical Information

IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
Tvj =25°C VRRM 800 V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert pro Chip
TC =80°C IFRMSM 23 A
RMS forward current per chip
Gleichrichter Ausgang Grenzeffektivstrom
TC =80°C IRMSmax 51 A
maximum RMS current at Rectifier output
Stoßstrom Grenzwert tP = 10 ms, T vj = 25°C IFSM 197 A
surge forward current tP = 10 ms, T vj = 150°C 158 A
2 2
Grenzlastintegral tP = 10 ms, T vj = 25°C It 194 As
2 2
I t - value tP = 10 ms, T vj = 150°C 125 As

Transistor Wechselrichter/ Transistor Inverter

Kollektor-Emitter-Sperrspannung
Tvj =25°C VCES 600 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC =80°C IC,nom. 10 A
DC-collector current TC = 25 °C IC 15 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, T c=80°C ICRM 20 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 55 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Wechselrichter/ Diode Inverter

Dauergleichstrom
IF 10 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms IFRM 20 A
repetitive peak forw. current
Grenzlastintegral 2
2 VR = 0V, tp = 10ms, Tvj = 125°C It 12 A2s
I t - value

prepared by: Thomas Passe date of publication: 2002-02-13

approved by: Ingo Graf revision: 7

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Modul Isolation/ Module Isolation
Isolations-Prüfspannung RMS, f = 50 Hz, t = 1 min.
VISOL 2,5 kV
insulation test voltage NTC connected to Baseplate

Elektrische Eigenschaften / Electrical properties

Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier min. typ. max.
Durchlaßspannung
Tvj = 150°C, IF = 10 A VF - 0,9 - V
forward voltage
Schleusenspannung
Tvj = 150°C V(TO) - 0,67 - V
threshold voltage
Ersatzwiderstand
Tvj = 150°C rT - 21 - mW
slope resistance
Sperrstrom
Tvj = 150°C, VR = 800 V IR - 5 - mA
reverse current

Modul Leitungswiderstand, Anschlüsse-Chip

TC = 25°C RAA'+CC' - 11 - mW
lead resistance, terminals-chip

Transistor Wechselrichter/ Transistor Inverter min. typ. max.

Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 10 A VCE sat - 1,95 2,55 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 10 A - 2,2 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,35mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 0,8 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom
VGE = 0V, Tvj =125°C, V CE = 600V ICES - 5,0 - mA
collector-emitter cut-off current
Gate-Emitter Reststrom
VCE = 0V, VGE =20V, Tvj =25°C IGES - - 400 nA
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn on delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 82 Ohm td,on - 32 - ns
VGE = ±15V, Tvj = 125°C, R G = 82 Ohm - 30 - ns
Anstiegszeit (induktive Last) IC = INenn, V CC = 300 V
rise time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 82 Ohm tr - 26 - ns
VGE = ±15V, Tvj = 125°C, R G = 82 Ohm - 28 - ns
Abschaltverzögerungszeit (ind. Last) IC = INenn, V CC = 300 V
turn off delay time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 82 Ohm td,off - 234 - ns
VGE = ±15V, Tvj = 125°C, R G = 82 Ohm - 230 - ns
Fallzeit (induktive Last) IC = INenn, V CC = 300 V
fall time (inductive load) VGE = ±15V, Tvj = 25°C, R G = 82 Ohm tf - 10 - ns
VGE = ±15V, Tvj = 125°C, R G = 82 Ohm - 30 - ns
Einschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-on energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 82 Ohm Eon - 0,36 - mWs
LS = 80 nH
Abschaltverlustenergie pro Puls IC = INenn, V CC = 300 V
turn-off energy loss per pulse VGE = ±15V, Tvj = 125°C, R G = 82 Ohm Eoff - 0,44 - mWs
LS = 80 nH
Kurzschlußverhalten tP £ 10µs, VGE £ 15V, RG = 82 Ohm
SC Data Tvj£125°C, VCC = 360 V ISC - 40 - A
dI/dt = 400 A/µs

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
LsCE - - 40 nH
stray inductance module

Modul Leitungswiderstand, Anschlüsse-Chip

TC = 25°C RCC'+EE' - 16 - mW
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter min. typ. max.

Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 10 A VF - 1,85 2,25 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 10 A - 1,9 - V
Rückstromspitze IF=INenn, - diF/dt = 300 A/us
peak reverse recovery current VGE = -10V, Tvj = 25°C, V R = 300 V IRM - 11 - A
VGE = -10V, Tvj = 125°C, V R = 300 V - 12 - A
Sperrverzögerungsladung IF=INenn, - diF/dt = 600 A/us
recovered charge VGE = -10V, Tvj = 25°C, V R = 300 V Qr - 0,4 - µAs
VGE = -10V, Tvj = 125°C, V R = 300 V - 0,8 - µAs
Abschaltenergie pro Puls IF=INenn, - diF/dt = 600 A/us
reverse recovery energy VGE = -10V, Tvj = 25°C, V R = 300 V Erec - 0,05 - mWs
VGE = -10V, Tvj = 125°C, V R = 300 V - 0,12 - mWs

NTC-Widerstand/ NTC-Thermistor min. typ. max.

Nennwiderstand TC = 25°C R25 - 5 - kW
Abweichung von R100
deviation of R100 TC = 100°C, R 100 = 493 W DR/R -5 5 %

Verlustleistung TC = 25°C P25 20 mW

power dissipation
B-Wert
R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Thermische Eigenschaften / Thermal properties min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH - 2,6 - K/W
thermal resistance, junction to heatsink Trans. Wechsr./ Trans. Inverter lgrease=1W/m*K - 2,8 - K/W

Diode Wechsr./ Diode Inverter - 4,3 - K/W

Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 2,4 K/W

thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 2,2 K/W
Diode Wechsr./ Diode Inverter - - 3,1 K/W

Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,4 - K/W

thermal resistance, case to heatsink
Trans. Wechsr./ Trans. Inverter lgrease=1W/m*K - 0,8 - K/W
Diode Wechsr./ Diode Inverter - 1,5 - K/W

Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Innere Isolation
Al2O3
internal insulation
CTI
225
comperative tracking index

Anpreßkraft f. mech. Befestigung pro Feder F 20...50 N

mounting force per clamp

Gewicht
G 25 g
weight
Kontakt - Kühlkörper Kriechstrecke
terminal to heatsink 10,5 mm
creeping distance
Luftstrecke
9,5 mm
clearance
Terminal - Terminal Kriechstrecke
terminal to terminal 5 mm
creeping distance
Luftstrecke
5 mm
clearance

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)
Output characteristic Inverter (typical) VGE = 15 V

20

18 Tj = 25°C
Tj = 125°C
16

14

12
IC [A]

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)

Output characteristic Inverter (typical) Tvj = 125°C

20

18
VGE = 8V
16 VGE = 9V
VGE = 10V
14
VGE = 12V

12 VGE = 15V
VGE = 20V
IC [A]

10

0
0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00

VCE [V]

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)
Transfer characteristic Inverter (typical) VCE = 20 V

20

18 Tj = 25°C
Tj = 125°C
16

14

12
IC [A]

10

0
5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00

VGE [V]

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)

Forward characteristic of FWD Inverter (typical)

20

18 Tj = 25°C
Tj = 125°C
16

14

12
IF [A]

10

0
0 0,5 1 1,5 2 2,5 3

VF [V]

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 300 V

Switching losses Inverter (typical) Tj = 125°C, V GE = ±15 V, RGon = RGoff = 82 Ohm

1,6

1,4 Eon
Eoff
Erec
1,2

1
E [mWs]

0,8

0,6

0,4

0,2

0
0 2 4 6 8 10 12 14 16 18 20

IC [A]

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)

Switching losses Inverter (typical) Tj = 125°C, V GE = +-15 V , I c = Inenn , VCC = 300 V

1,6

1,4 Eon
Eoff
1,2 Erec

1
E [mWs]

0,8

0,6

0,4

0,2

0
80 100 120 140 160 180 200

RG [W]

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Transienter Wärmewiderstand Wechselr. ZthJH = f (t)
Transient thermal impedance Inverter

10,000

Zth-IGBT
Zth-FWD
ZthJH [K/W]

1,000

i 1 2 3 4
IGBT: ri [K/W]: 185e-3 922,6e-3 722,7e-3 969,7e-3
ti [s]: 3e-6 79,9e-3 10,3e-3 226,8e-3
FWD: r i [K/W]: 280,9e-3 1,41 1,1 1,51
ti [s]: 3e-6 78,7e-3 10,16e-3 225,6e-3
0,100
0,001 0,01 0,1 1 10

t [s]

Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)

Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 82 Ohm

25

20
IC,Modul
IC,Chip
15
IC [A]

10

0
0 100 200 300 400 500 600 700

VCE [V]

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)
Forward characteristic of Rectifier Diode (typical)

20

18
Tj = 25°C
Tj = 150°C
16

14

12
IF [A]

10

0
0,00 0,20 0,40 0,60 0,80 1,00 1,20

VF [V]

NTC- Temperaturkennlinie (typisch) R = f (T)

NTC- temperature characteristic (typical)

100000
Rtyp

10000
R[W]

1000

100
0 20 40 60 80 100 120 140

TC [°C]

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Vorläufig
Preliminary
Schaltplan/ Circuit diagram

Gehäuseabmessungen/ Package outlines

Bohrplan /
drilling layout

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules FB10R06KL4
Gehäuseabmessungen Forts. / Package outlines contd.

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine

Eigenschaften zugesichert. Diese gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes

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