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Technische Information / Technical Information

IGBT-Module
IGBT-Modules BSM35GP120

Elektrische Eigenschaften / Electrical properties


Höchstzulässige Werte / Maximum rated values
Diode Gleichrichter/ Diode Rectifier
Periodische Rückw. Spitzensperrspannung
VRRM 1600 V
repetitive peak reverse voltage
Durchlaßstrom Grenzeffektivwert
I FRMSM 40 A
RMS forward current per chip
Dauergleichstrom
TC = 80°C Id 35 A
DC forward current
Stoßstrom Grenzwert tP = 10 ms, Tvj = 25°C I FSM 315 A
surge forward current tP = 10 ms, Tvj = 150°C 260 A
2 2
Grenzlastintegral tP = 10 ms, Tvj = 25°C I t 500 As
2 2
I t - value tP = 10 ms, Tvj = 150°C 340 As

Transistor Wechselrichter/ Transistor Inverter


Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage
Kollektor-Dauergleichstrom Tc = 80 °C I C,nom. 35 A
DC-collector current TC = 25 °C IC 45 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, TC = 80 °C I CRM 70 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 230 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Wechselrichter/ Diode Inverter


Dauergleichstrom
Tc = 80 °C IF 35 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms I FRM 70 A
repetitive peak forw. current
Grenzlastintegral
VR = 0V, tp = 10ms, Tvj = 125°C I 2t 310 A2s
I 2t - value

Transistor Brems-Chopper/ Transistor Brake-Chopper


Kollektor-Emitter-Sperrspannung
VCES 1200 V
collector-emitter voltage
Kollektor-Dauergleichstrom TC = 80 °C I C,nom. 17,5 A
DC-collector current TC = 25 °C IC 35 A
Periodischer Kollektor Spitzenstrom
tP = 1 ms, TC = 80°C I CRM 35 A
repetitive peak collector current
Gesamt-Verlustleistung
TC = 25°C Ptot 180 W
total power dissipation
Gate-Emitter-Spitzenspannung
VGES +/- 20V V
gate-emitter peak voltage

Diode Brems-Chopper/ Diode Brake-Chopper


Dauergleichstrom
Tc = 80 °C IF 10 A
DC forward current
Periodischer Spitzenstrom
tP = 1 ms I FRM 20 A
repetitive peak forw. current

prepared by: Andreas Schulz date of publication:29.03.2001

approved by: Robert Severin revision: 5

1(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Elektrische Eigenschaften / Electrical properties


Charakteristische Werte / Characteristic values
min. typ. max.
Modulinduktivität
LσCE - - 100 nH
stray inductance module
Modul Leitungswiderstand, Anschlüsse-Chip
TC = 25°C RCC'+EE' - 7 - mΩ
lead resistance, terminals-chip

Diode Wechselrichter/ Diode Inverter min. typ. max.


Durchlaßspannung VGE = 0V, Tvj = 25°C, IF = 35 A VF - 1,95 2,45 V
forward voltage VGE = 0V, Tvj = 125°C, IF = 35 A - 1,8 - V
Rückstromspitze I F=INenn, - diF/dt = 1400A/µs
peak reverse recovery current VGE = -10V, Tvj = 25°C, VR = 600 V I RM - 40 - A
VGE = -10V, Tvj = 125°C, VR = 600 V - 45 - A
Sperrverzögerungsladung I F=INenn, - diF/dt = 1400A/µs
recovered charge VGE = -10V, Tvj = 25°C, VR = 600 V Qr - 3,5 - µAs
VGE = -10V, Tvj = 125°C, VR = 600 V - 7,5 - µAs
Abschaltenergie pro Puls I F=INenn, - diF/dt = 1400A/µs
reverse recovery energy VGE = -10V, Tvj = 25°C, VR = 600 V ERQ - 1,3 - mWs
VGE = -10V, Tvj = 125°C, VR = 600 V - 2,5 - mWs

Transistor Brems-Chopper/ Transistor Brake-Chopper min. typ. max.


Kollektor-Emitter Sättigungsspannung VGE = 15V, Tvj = 25°C, IC = 17,5 A VCE sat - 2,3 2,75 V
collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, IC = 17,5 A - 2,7 - V
Gate-Schwellenspannung
VCE = VGE, Tvj = 25°C, IC = 0,6mA VGE(TO) 4,5 5,5 6,5 V
gate threshold voltage
Eingangskapazität f = 1MHz, Tvj = 25°C
Cies - 1,0 - nF
input capacitance VCE = 25 V, VGE = 0 V
Kollektor-Emitter Reststrom VGE = 0V, Tvj = 25°C, VCE = 1200 V I CES - 1,0 500 µA
collector-emitter cut-off current VGE = 0V, Tvj = 125°C, VCE = 1200 V - 1,2 - mA
Gate-Emitter Reststrom
VCE = 0V, VGE = 20V, Tvj = 25°C I GES - - 300 nA
gate-emitter leakage current

Diode Brems-Chopper/ Diode Brake-Chopper min. typ. max.


Durchlaßspannung Tvj = 25°C, IF = 17,5 A VF - 2,7 3,05 V
forward voltage Tvj = 125°C, IF = 17,5 A - 2,6 - V

NTC-Widerstand/ NTC-Thermistor min. typ. max.


Nennwiderstand
rated resistance TC = 25°C R25 - 5 - kΩ

Abweichung von R100


deviation of R100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %

Verlustleistung TC = 25°C P25 20 mW


power dissipation
B-Wert R2 = R1 exp [B(1/T2 - 1/T1)] B25/50 3375 K
B-value

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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Thermische Eigenschaften / Thermal properties


min. typ. max.
Innerer Wärmewiderstand Gleichr. Diode/ Rectif. Diode RthJC - - 1 K/W
thermal resistance, junction to case Trans. Wechsr./ Trans. Inverter - - 0,55 K/W
Diode Wechsr./ Diode Inverter - - 0,8 K/W
Trans. Bremse/ Trans. Brake - - 0,7 K/W
Diode Bremse/ Diode Brake - - 2,3 K/W
Übergangs-Wärmewiderstand Gleichr. Diode/ Rectif. Diode λPaste=1W/m*K RthCK - 0,08 - K/W
thermal resistance, case to heatsink Trans. Wechsr./ Trans. Inverter λgrease=1W/m*K - 0,04 - K/W
Diode Wechsr./ Diode Inverter - 0,08 - K/W
Höchstzulässige Sperrschichttemperatur
Tvj - - 150 °C
maximum junction temperature
Betriebstemperatur
Top -40 - 125 °C
operation temperature
Lagertemperatur
Tstg -40 - 125 °C
storage temperature

Mechanische Eigenschaften / Mechanical properties

Innere Isolation
Al2O3
internal insulation
CTI
225
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung M 3 Nm
mounting torque ±10%
Gewicht
G 180 g
weight

4(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)


Output characteristic Inverter (typical) VGE = 15 V

70

60

Tj = 25°C
50
Tj = 125°C

40
IC [A]

30

20

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VCE [V]

Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)


Output characteristic Inverter (typical) Tvj = 125°C

70

VGE = 17V
60
VGE = 15V
VGE = 13V
50 VGE = 11V
VGE = 9V
40
IC [A]

30

20

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5

VCE [V]

5(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE)


Transfer characteristic Inverter (typical) VCE = 20 V

70

60

50
Tj = 25°C
Tj = 125°C
40
IC [A]

30

20

10

0
0 2 4 6 8 10 12 14

VGE [V]

Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)


Forward characteristic of FWD Inverter (typical)

70

60

50
Tj = 25°C
Tj = 125°C
40
IF [A]

30

20

10

0
0 0,5 1 1,5 2 2,5 3

VF [V]

6(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 600 V
Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff = 22 Ohm

14

12
Eon
Eoff
10 Erec
E [mWs]

0
0 10 20 30 40 50 60 70 80

IC [A]

Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)


Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC = 600 V

Eon
6
Eoff
Erec
5
E [mWs]

0
0 5 10 15 20 25 30 35 40 45 50

RG [Ω ]

7(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Transienter Wärmewiderstand Wechselr. ZthJC = f (t)


Transient thermal impedance Inverter

Zth-IGBT
Zth-FWD
ZthJC [K/W]

0,1

0,01
0,001 0,01 0,1 1 10

t [s]

Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)


Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG = 22 Ohm

80

70

60

50 IC,Modul
IC,Chip
IC [A]

40

30

20

10

0
0 200 400 600 800 1000 1200 1400

VCE [V]

8(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)


Output characteristic brake-chopper-IGBT (typical) VGE = 15 V

35

30
Tj = 25°C
Tj = 125°C
25

20
IC [A]

15

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4 4,5

VCE [V]

Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)


Forward characteristic of brake-chopper-FWD (typical)
35

30

25
Tj = 25°C
Tj = 125°C
20
IF [A]

15

10

0
0 0,5 1 1,5 2 2,5 3 3,5 4

VF [V]

9(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF)


Forward characteristic of Rectifier Diode (typical)

70

60

50
Tj = 25°C
Tj = 150°C
40
IF [A]

30

20

10

0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6

VF [V]

NTC- Temperaturkennlinie (typisch) R = f (T)


NTC- temperature characteristic (typical)

100000
Rtyp

10000
R[Ω ]

1000

100
0 20 40 60 80 100 120 140 160

TC [°C]

10(11)
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules BSM35GP120

Schaltplan/ Circuit diagram

21 22 8 9

20 18 16
19 17 15 NTC
1 2 3 7 4 5 6

14 13 12 11
23 24 10

Gehäuseabmessungen/ Package outlines

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine


Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is


valid in combination with the belonging technical notes.

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