Flipped classroom light course in

photovoltaics at TH Köln in 2022

Ulf Blieske

Content:

• Organization of the course in 2022

• Why photovoltaics?
• Working principles of solar cells
• Doping semiconductors
• Photoelectric effect

24.3.2022 photovoltaics-course-TH Köln 2022 1

 Flipped classroom light course in
photovoltaics at TH Köln in 2022

Ulf Blieske

Content:

• Organization of the course in 2022

• Why photovoltaics?
• Working principles of solar cells
• Doping semiconductors
• Photoelectric effect

24.3.2022 photovoltaics-course-TH Köln 2022 2

 FLIPPED-CLASSROOM
Bedeutung/Meaning?

18.3.2019 Photovoltaik – Blieske- SoSe 19 3

Klassisches Modul / Classical Course:

Lehrender/Teacher (activ) Lernende/Students (passiv)

University
(gemeinsame Zeit/
time together):

Lernende/Students (activ)

Hausarbeit/home work
(Zeit der Nachbereitung
/ follow-up time):

18.3.2019 Photovoltaik – Blieske- SoSe 19 4

FLIPPED-CLASSROOM:

Lernende/ Students (passiv)

Hausarbeit/home work
(Zeit der Wissensvermittlung / video leaning):

Lehrender/Teacher (activ) Lernende / Students (activ)

University
(gemeinsame Zeit/
time together):

18.3.2019 Photovoltaik – Blieske- SoSe 19 5

 Date Lectures in photovoltaics
(PV) in 2021

With activating online-elements:

Quiz, survey or
break-out sessions
No lecture

With ADDITINAL activating on-site elements:

Group-discussions (with feed-back)
No lecture Think-pair-share
Demontrators and samples

No lecture

No lecture

24.3.2022 6
 MODUL PHOTOVOLTAIK SOSE-22
Klausur/ Exam
• Insgesamt 60 Punkte maximal von 100Pkt. / 60 points out of 100pts
• Zusätzlich 40 Punkte für das Projekt / 40 points out of 100pts through project
• Melden Sie sich in PSSO an/ Please, register for the exam in PSSO
• Für F09: Es ist ein Projektmodul
• Die Punkte aus dem Projekt verfallen nach einem Jahr/ Points from the project
are only valid for one year

18.3.2019 Photovoltaik – Blieske- SoSe 19 7

 MODUL PHOTOVOLTAIK SOSE-22
Projekt-Praktikum-Übungen/ Project-lab experiment-exercises
• WICHTIG: Melden Sie sich in ILIAS bis zum 31.3. zum PV-Sol Projekt an /
Important: Please, register for the PV-Sol project in ILIAS until 31.3.
• FREIWILLIG: Melden Sie sich in ILIAS bis zum 31.3. für das Laborpraktikum an/
VOLUNTARILY: Please, register for the lab-experiment in ILIAS until 31.3.
• ÜBUNGEN: Jeweils Dienstag, 9:45-11:15 in ZW-5-1 und online, Exercises: Always
Tuesdy, 9:45-11:15 in ZW-5-1 and online

18.3.2019 Photovoltaik – Blieske- SoSe 19 8

 Fragen/Anmerkungen?
Questions / Comments?

24.3.2022 9
 Flipped classroom light course in
photovoltaics at TH Köln in 2022

Ulf Blieske

Content:

• Organization of the course in 2022

• Why photovoltaics?
• Working principles of solar cells
• Doping semiconductors
• Photoelectric effect

24.3.2022 photovoltaics-course-TH Köln 2022 10

 Why photovoltaics? 1st agrument:
The energy source with the largest potential world-wide

• Annual solar radiation on earth Annual solar radiation

surface: 1,1*1018 kWh on earth surface

• Global primary energy consumption

2018: 13,865 billion tons of oil =
147 trillion (1012) kWh
(Quelle: BP statistical review of world energy 2019)

Global
oil Uran- Annual
ium energy
Total consum-
energy ption
coal reserve
=> About 7000 times the
Global primary energy consumption

24.3.2022 11
 Why photovoltaics? 2nd agrument:
Contineous technological development

Quelle: Best research cell efficiencies, https://www.nrel.gov/pv/assets/pdfs/best-research-cell-efficiencies-rev211011.pdf,

accessed on November 3rd, 2021

24.3.2022 12
 Why photovoltaics? 3rd agrument:
Contineous market growth
Photovoltaics worldwide:
Power in GWp

year
Source: IHS Markt 2021, PSE 2021, date of data: 19.5.2021

13
 Why photovoltaics? 4th agrument:
Drastic price decrease

1980

1990
2000
2010

2021

source: Historic module prices from ITRPV

24.3.2022 14
 Why photovoltaics? 5th agrument:
Interesting job and project opportunities
Some examples in Cologne region
of companies who employed TH
Köln graduates from renewables
in the field of PV in the past 5 Ghana, November 2016
years (2016-2021):
• TÜV Rheinland
• Rheinenergie
• Paxos Consulting
• Lorenz Montagesysteme
• 100 Energie
• Projektgewinner
• Potthoff GmbH
• GVG mbH Rhein Erft
Chile, March 2017
• Wegatech Greenenergy GmbH
24.3.2022 15
 Group Discussion or break-out session

1. Was könnten mögliche Gründe gegen PV

sein?
2. Diskutieren Sie Risiken und Chancen der PV

1. What could be arguments against

photovoltaics?
2. Discuss risks and opportunities of PV

24.3.2022 16
 Flipped classroom light course in
photovoltaics at TH Köln in 2022

Ulf Blieske

Content:

• Organization of the course in 2022

• Why photovoltaics?
• Working principles of solar cells
• Doping semiconductors
• Photoelectric effect

24.3.2022 photovoltaics-course-TH Köln 2022 17

Doping Semiconductors
• Doping
• addition of small quantities of an element to a pure semiconductor to
change its electrical conductivity

Silicon without doping

electrons are bound by covalent bonds Si4+
→ low conductivity
Covalent Bond

Si4+
Si4+ Si4+

Si4+
Source: J. Müller-Ost, U. Blieske; Cologne
Institute for Renewable Energies; 2021
Intrinsic charge carrier density

Silicon crystal Silicon crystal

T=0K T>0K

Si Si Si Si Si Si
hole

Si Si Si Si Si Si
free
electron
Si Si Si Si Si Si

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021 Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
Intrinsic charge carrier density

𝑛𝑛 � 𝑝𝑝 = 𝑛𝑛𝑖𝑖2
n electron density
p hole density
ni intrinsic carrier concentration Si Si Si
k Boltzmann constant hole
T Temperature
Si Si Si
free
electron
Si Si Si

Intrinsic charge carrier density for Si at 300 K

ni 1.08 ⋅ 1010 cm-3

 Fermi energy
Basics

F(E) = 0

F(E) = 0,5
EF EF

F(E) = 1

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Fermi energy
Metal
T=0K

EF EF

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Fermi energy
Metal
T >>
> 00KK

EF EF

T=0K
T>0K
T >> 0 K

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Fermi energy
Semiconductor

EC

EF EF

EV

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Fermi energy
Semiconductor
T >= 0 K

EC

EF EF

EV

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

Doping materials
Periodic table

Group
Period
I II III IV V VI VII VIII
H He
Hydrogen Helium 1
1 2
Li Be B C N O F Ne
Lithium Beryllium Boron Carbon Nitrogen Oxygen Fluorine Neon 2
3 4 5 6 7 8 9 10
Na Mg Al Si P S Cl Ar
Sodium Magnesium Aluminium Silicon Phosphorus Sulfur Chlorine Argon 3
11 12 13 14 15 16 17 18
K Ca Ga Ge As Se Br Kr
Potassium Calcium Gallium Germanium Arsenic Selenium Bromine Krypton 4
19 20 31 32 33 34 35 36
Rb Sr In Sn Sb Te I Xe
Rubidium Strontium Indium Tin Antimony Tellurium Iodine Xenon 5
37 38 49 50 51 52 53 54
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
n-Doping
Crystal

5th group in the periodic

system: phosphorus
Si Si Si Si

P
Si Si Si Si

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

Si Si Si Si

Si Si Si Si

 increase of conductivity
free electron bound electron
 n-Doping
Energy band diagram
Fermi energy just below conduction band

conduction band Electrons: Majority carriers

nn: Electron density in n-doped crystal

EC
EF
donor level

EV
Holes: Minority carriers
pn: Hole density in n-doped crystal

valence band
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
n-Doping
Conductivity σ

conductivity 𝜎𝜎 = 𝑒𝑒 � 𝑛𝑛 � 𝜇𝜇𝑛𝑛
e elementary charge
n electron density
µn mobility of electrons

electron density n = nn ≈ 𝑁𝑁𝐷𝐷+ ≈ ND

ND donor concentration
+ concentration of ionised donor atoms
ND

⇒ 𝜎𝜎 = 𝑒𝑒 � 𝑁𝑁𝐷𝐷 � 𝜇𝜇𝑛𝑛
p-Doping
Crystal

3rd group in the periodic

system: boron
Si Si Si Si

B
Si Si Si Si

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

Si Si Si Si

Si Si Si Si
 increase of conductivity
by hole conduction
hole (missing electron) bound electron
 p-Doping
Energy band diagram
Fermi energy just above valence band

conduction band Electrons: minority carriers

np: Electron density in p-doped crystal

EC

acceptor level
EF
EV
Holes: majority carriers
pp: Hole density in p-doped crystal

valence band
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
p-Doping
Conductivity σ

conductivity 𝜎𝜎 = 𝑒𝑒 � 𝑝𝑝 � 𝜇𝜇𝑝𝑝
e elementary charge
p hole density
µp mobility of holes

hole density p = pp ≈ 𝑁𝑁𝐴𝐴− ≈ NA

NA acceptor concentration
NA− concentration of ionised donor atoms

⇒ 𝜎𝜎 = 𝑒𝑒 � 𝑁𝑁𝐴𝐴 � 𝜇𝜇𝑝𝑝
SUMMARY
• In intrinsic semiconductors the total number of negative charge carriers
is equal to the total number of positive charge carriers.
• In n-doped semiconductors a large number of free electrons is present.
Electrons are the majority charge carriers.
• In p-doped semiconductors a large number of holes is present. Holes
are the majority charge carriers.
• In both cases, the charge carrier density can be estimated equal to the
dopant concentration.

Quiz
 Flipped classroom light course in
photovoltaics at TH Köln in 2022

Ulf Blieske

Content:

• Organization of the course in 2022

• Why photovoltaics?
• Working principles of solar cells
• Doping semiconductors
• Photoelectric effect

24.3.2022 photovoltaics-course-TH Köln 2022 34

 Photoelectric effect
Photon energy = bandgap
Ephoton = Eg

absorption of photon
→ generation of an electron-hole-
pair
EC

Eg

EV electromagnetic radiation

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Photoelectric effect
Photon energy < bandgap
Ephoton < Eg

no absorption
→ photon is transmitted

EC

Eg

EV electromagnetic radiation

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Photoelectric effect
Photon energy > bandgap
Ephoton > Eg

absorption of photons
→ Generation of an electron-
hole-pair
EC excess energy is released as heat to
the crystal lattice
Eg

EV electromagnetic radiation

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

Energy and wavelength of photons
𝐸𝐸𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = ℎ � 𝑓𝑓𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝
fphoton Frequency of the photon
h Planck constant
h= 6.626 ⋅ 10-34 Js

𝑓𝑓𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = 𝑐𝑐 � 𝜆𝜆𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝
λphoton wavelength of the photon
c speed of light
c= 2.998 ⋅ 108 m/s

𝑐𝑐
⇒ 𝐸𝐸𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = ℎ �
𝜆𝜆𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝
Cutoff wavelength
Cutoff wavelength λg: photon energy = band gap
h⋅c
𝜆𝜆𝑔𝑔 =
Eg

λ < λg  electron is lifted to conduction band

Terrestrial solar radiation (AM 1.5 )

λg
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
Cutoff wavelength
Cutoff wavelength λg: photon energy = band gap
h⋅c
𝜆𝜆𝑔𝑔 =
Eg

Terrestrial solar radiation (AM 1.5 )

useable part of spectrum (c-Si)
Transmission losses (c-Si)
Thermalisation losses (c-Si)

λg
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
Cutoff wavelength

h⋅c
𝜆𝜆𝑔𝑔 =
Eg
h 6.626 ⋅ 10-34 Js
c 2.998 ⋅ 108 m/s
eV 1.6 ⋅ 10-19 J
m
6.626 ⋅ 10−34 Js ⋅ 2.998 ⋅ 108
= s
J
1.6 ⋅ 10−19 eV ⋅ Eg

1.24 μm ⋅ eV
⇒ 𝜆𝜆𝑔𝑔 =
Eg
 Electron-Hole Recombination

Band-to-band recombination:
electrons lose energy and fall back to the valence band

EC

EV

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

 Electron-Hole Recombination

Shockley-Read-Hall recombination:
defect energy level ET within the band gap created by impurities

Carrier lifetime τ
average time between generation and
recombination of minority carriers
EC

ET

EV

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

Types of charge carrier generation

heat

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

silicon

boron

ni 2
pp ≈ nA pphoto effect np ≈ n nphoto effect
A

? ?
Photogenerated carrier density
Basic assumptions
Psunlight = 1000 W/m²
λsunlight,max = 550 nm

Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021

d = 185 µm
τ = 100 µs
Photogenerated carrier density
Photon energy
𝑐𝑐
𝐸𝐸𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = ℎ � 𝜆𝜆𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠,𝑚𝑚𝑚𝑚𝑚𝑚 = 550 nm
𝜆𝜆𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠,𝑚𝑚𝑚𝑚𝑚𝑚
m
2.998 ⋅ 108
⟹ 𝐸𝐸𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = 6.626 � 10−34 Js ⋅ s
550 ⋅ 10−9 m
= 3.6 ⋅ 10−19 J

Number of photons (per area)

𝑃𝑃𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠 𝑊𝑊
𝑛𝑛𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = 𝑃𝑃𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠𝑠 = 1000
𝐸𝐸𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 𝑚𝑚𝑚
1000 𝑊𝑊/𝑚𝑚𝑚
⇒ 𝑛𝑛𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 =
3.6 ⋅ 10−19 Ws
𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝
= 2.78 ⋅ 1021
𝑚𝑚2 ⋅𝑠𝑠
Photogenerated carrier density
Considering Transmission losses
(→ Number of electron-hole pairs per area and second)

2 1 1 assumption:
21 21
= ⋅ 2.78 ⋅ 10 = 1.85 ⋅ 10 2/3 of all photons generate
3 𝑚𝑚2 ⋅ 𝑠𝑠 𝑚𝑚2 ⋅ 𝑠𝑠 electron−hole pairs

Considering carriers lifetime

(→ Number of electron-hole pairs per area)

1 1
= 1.85 ⋅ 10 21 ⋅ 100 µ𝑠𝑠 = 1.85 ⋅ 1017 τ = 100 µs
𝑚𝑚2 ⋅ 𝑠𝑠 𝑚𝑚2

Photogenerated carrier density

1
1.85 ⋅ 1016 d = 185 µm
𝑛𝑛𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝𝑝 = 𝑚𝑚2 = 1 ⋅ 1015 𝑐𝑐𝑚𝑚−3
185 µ𝑚𝑚
Majority & minority carrier densities
Hole densities
majorities in p-Si

pp ≈ nA 1⋅1016 cm-3
(nA = 1 ⋅ 1016 cm-3)

pphoto effect 1⋅1015 cm-3

Electron densities
minorities in p-Si

ni 2
np ≈ n 1.2⋅104 cm-3
A
(ni, 300K = 1.1 ⋅ 1010 cm-3)

nphoto effect 1⋅1015 cm-3

Majority & minority carrier densities
Influence of illumination

Semiconductor
Semiconductor illuminated
in the dark

Hole densities 1⋅1016 cm-3 1⋅1016 cm-3 + 1⋅1015 cm-3

1016 cm-3

Electron densities 1.2⋅104 cm-3 1.2⋅104 cm-3 + 1⋅1015 cm-3

1015 cm-3
Majority & minority carrier densities

princesses 𝟏𝟏
= Bad ratio!
princes 𝟏𝟏 𝟎𝟎𝟎𝟎𝟎𝟎 𝟎𝟎𝟎𝟎𝟎𝟎

1000 princes join:

princesses 1
=
princes 1 000 000 + 1 000

𝟏𝟏 Nothing
≈
𝟏𝟏 𝟎𝟎𝟎𝟎𝟎𝟎 𝟎𝟎𝟎𝟎𝟎𝟎 changes!
1000 princesses join:
princesses 1 + 1 000
=
princes 1 000 000

≈
𝟏𝟏 Much
𝟏𝟏 𝟎𝟎𝟎𝟎𝟎𝟎 better!
Source: J. Müller-Ost, U. Blieske; Cologne Institute for Renewable Energies; 2021
SUMMARY
• Photons with eneries higher than the band gap can raise electrons
from the valence to the conduction band.
• The wavelength corresponding to the band gap energy is called cutoff
wavelength.
• Electrons can fall back from the conduction to the valence band and
recombine with a hole.
• In an illuminated doped semiconductor, the number of minority charge
carriers is increased significantly while the number of majority charge
carriers remains approximately the same.
 Thank you for attention

Do you have questions?

24.3.2022 52