Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34,

BPW 34 S, BPW 34 S (E9087)

BPW 34

BPW 34 S

BPW 34 S (E9087)

Wesentliche Merkmale Speziell geeignet fr Anwendungen im Bereich von 400 nm bis 1100 nm Kurze Schaltzeit (typ. 20 ns) DIL-Plastikbauform mit hoher Packungsdichte BPW 34 S/(E9087): geeignet fr Vapor-Phase Lten und IR-Reflow Lten (JEDEC level 4) Anwendungen Lichtschranken fr Gleich- und Wechsellichtbetrieb IR-Fernsteuerungen Industrieelektronik Messen/Steuern/Regeln Typ Type BPW 34 BPW 34 S BPW 34 S (E9087) Bestellnummer Ordering Code Q62702-P73 Q62702-P1602 Q62702-P1790

Features Especially suitable for applications from 400 nm to 1100 nm Short switching time (typ. 20 ns) DIL plastic package with high packing density BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications Photointerrupters IR remote controls Industrial electronics For control and drive circuits

2001-02-21

BPW 34, BPW 34 S, BPW 34 S (E9087)

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value 40 + 85 32 150 Einheit Unit C V mW

Top; Tstg VR Ptot

Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Parameter Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlnge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Symbol Symbol Wert Value 80 ( 50) 850 400 1100 Einheit Unit nA/Ix nm nm

S
S max

A LB LW

7.00 2.65 2.65

mm2 mm mm

60 2 ( 30) 0.62 0.90 365 ( 300)

Grad deg. nA A/W Electrons Photon mV

IR S

VO

2001-02-21

BPW 34, BPW 34 S, BPW 34 S (E9087)

Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) (contd) Bezeichnung Parameter Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitt, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 10 V, = 850 nm Detection limit Symbol Symbol Wert Value 80 20 Einheit Unit A ns

ISC tr, tf

VF C0 TCV TCI NEP

1.3 72 2.6 0.18 4.1 10 14

V pF mV/K %/K W ----------Hz cm Hz ------------------------W

D*

6.6 1012

2001-02-21

BPW 34, BPW 34 S, BPW 34 S (E9087)

Relative Spectral Sensitivity Srel = f ()
100 S rel % 80
OHF00078

Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev)

P
10 3 A
OHF01066

Total Power Dissipation Ptot = f (TA)

160 mW Ptot 140 120 100
OHF00958

10 4 mV VO 10 3

10 2 VO

60
10 1

10 2

80 60

40
10 0 10 1

40 20

20

0 400 500 600 700 800 900 nm 1100

10 -1 10 0

10 1

10 2

10 0 10 3 lx 10 4 EV

20

40

60

80 C 100 TA

Dark Current IR = f (VR), E = 0

4000
OHF00080

Capacitance C = f (VR), f = 1 MHz, E = 0

100 C pF 80
OHF00081

Dark Current

IR = f (TA), VR = 10 V, E = 0
10 3
OHF00082

pA

R nA
10 2

3000

70 60
2000

50 40 30

10 1

1000

10 0

20 10
0 0 5 10 15 V VR 20

0 -2 10

10 -1

10 0

10 1

V 10 2 VR

10 -1

20

40

60

80 C 100 TA

Srel = f ()

Directional Characteristics
40 30 20 10

0 1.0

OHF01402

50 0.8 60

0.6

70

0.4

80

0.2 0

90

100

1.0

0.8

0.6

0.4

20

40

60

80

100

120

2001-02-21

BPW 34, BPW 34 S, BPW 34 S (E9087)

Mazeichnung Package Outlines
BPW 34

5.4 (0.213) Cathode marking 4.0 (0.157) 3.7 (0.146)

0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028)

4.9 (0.193) 4.5 (0.177)

0.8 (0.031) 0.6 (0.024) 0.6 (0.024) 0.4 (0.016) 2.2 (0.087) 1.9 (0.075)

4.3 (0.169)

Chip position

0.6 (0.024)

1.8 (0.071) 1.4 (0.055)

0.6 (0.024) 0.4 (0.016) 0.4 (0.016) 0.35 (0.014) 0.5 (0.020) 0.2 (0.008) 0.3 (0.012) 0.8 (0.031) 0.6 (0.024)

0 ... 5

Photosensitive area 2.65 (0.104) x 2.65 (0.104)

5.08 (0.200) spacing

GEOY6643

BPW 34 S

Chip position
1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004) 0.3 (0.012)

1.1 (0.043) 0.9 (0.035)

0.2 (0.008) 0.1 (0.004)
GEOY6863

6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169)

0.9 (0.035) 0.7 (0.028)

1.8 (0.071) 0.2 (0.008)

1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)
5

Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)

Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-21

0...5

3.5 (0.138) 3.0 (0.118)

BPW 34, BPW 34 S, BPW 34 S (E9087)

BPW 34 S (E9087)

Chip position

1.2 (0.047) 1.1 (0.043) 0...0.1 (0...0.004)

0.3 (0.012)

1.1 (0.043) 0.9 (0.035)

6.7 (0.264) 4.5 (0.177) 4.3 (0.169) 6.2 (0.244)

1.8 (0.071) 0.2 (0.008)

Photosensitive area Cathode lead 2.65 (0.104) x 2.65 (0.104)

0.9 (0.035) 0.7 (0.028)

Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2001-02-21

1.7 (0.067) 1.5 (0.059) 4.0 (0.157) 3.7 (0.146)

GEOY6916

0.2 (0.008) 0.1 (0.004)

0...5