NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant

SFH 309 SFH 309 FA

SFH 309

SFH 309 FA

Wesentliche Merkmale Speziell geeignet fr Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA) Hohe Linearitt 3 mm-Plastikbauform im LED-Gehuse Gruppiert lieferbar Anwendungen Lichtschranken fr Gleich- und Wechsellichtbetrieb Industrieelektronik Messen/Steuern/Regeln Typ Type SFH 309 SFH 309-3/4 SFH 309-4 SFH 309-4/5 SFH 309-5 SFH 309-5/6 Bestellnummer Ordering Code Q62702P0859 Q62702P3592 Q62702P0998 Q62702P3593 Q62702P0999 Q62702P3594

Features Especially suitable for applications from 380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA) High linearity 3 mm LED plastic package Available in groups Applications Photointerrupters Industrial electronics For control and drive circuits

Typ Type SFH 309 FA SFH 309 FA-3/4 SFH 309 FA-4 SFH 309 FA-4/5 SFH 309 FA-5 SFH 309 FA-5/6

Bestellnummer Ordering Codes Q62702-P0941 Q62702-P3590 Q62702-P0178 Q62702-P3591 Q62702-P0180 Q62702-P5199

2007-04-02

SFH 309, SFH 309 FA

Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, < 10 s Collector surge current Verlustleistung, TA = 25 C Total power dissipation Wrmewiderstand Thermal resistance Symbol Symbol Wert Value 40 + 100 35 15 75 165 450 Einheit Unit C V mA mA mW K/W

Top; Tstg VCE IC ICS Ptot RthJA

2007-04-02

SFH 309, SFH 309 FA

Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Wellenlnge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Symbol Symbol SFH 309 S max 860 380 1150 Wert Value SFH 309 FA 900 730 1120 nm nm Einheit Unit

Bestrahlungsempfindliche Flche ( 220 m) A Radiant sensitive area Abmessungen der Chipflche Dimensions of chip area Abstand Chipoberflche zu Gehuseoberflche Distance chip front to case surface Halbwinkel Half angle Kapazitt, VCE = 0 V, f = 1 MHz, E = 0 Capacitance Dunkelstrom Dark current VCE = 25 V, E = 0

0.038 0.45 0.45 2.4 2.8

0.038 0.45 0.45 2.4 2.8

mm2 mm mm mm

LB LW H

12 5.0 1 ( 200)

12 5.0 1 ( 200)

Grad deg. pF nA

CCE ICEO

2007-04-02

SFH 309, SFH 309 FA

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V SFH 309: Ev = 1000 Ix, Normlicht/ standard light A, VCE = 5 V Symbol Symbol -2 -3 Wert Value -4 -5 -6 Einheit Unit

IPCE IPCE

0.4 0.8 1.5 5

0.63 1.25 2.8 6

1.0 2.0 4.5 7

1.6 3.2 7.2 8

2.5 5.0 11.2 9

mA mA s

Anstiegszeit/Abfallzeit tr , t f Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-EmitterSttigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) 0.3, Ee = 0.5 mW/cm2
1) 1)

VCEsat

200

200

200

200

200

mV

IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. IPCEmin is the min. photocurrent of the specified group.

Directional Characteristics Srel = f ()

2007-04-02

SFH 309, SFH 309 FA

Relative Spectral Sensitivity, SFH 309 Srel = f ()
100 S rel % 80
OHF01121

Relative Spectral Sensitivity, SFH 309 FA Srel = f ()

Photocurrent IPCE = f (Ee), VCE = 5 V

60

40

20

0 400

600

800

1000 nm 1200

Total Power Dissipation Ptot = f (TA)

Photocurrent IPCE = f (VCE), Ee = Parameter

Dark Current ICEO = f (VCE), E = 0

CEO
10 1 nA
OHF01527

10 0

10 -1

10 -2

10 -3

10

15

20

25

30 V 35 V CE

Dark Current ICEO = f (TA), VCE = 25 V, E = 0

CEO
10 3 nA
OHF01530

Capacitance CCE = f (VCE), f = 1 MHz, E = 0

5.0 C CE pF 4.0
OHF01528

Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V

PCE 25
1.4 1.2

PCE

1.6

OHF01524

10 2

3.5 3.0
1.0 0.8 0.6 0.4

10 1

2.5 2.0 1.5

10 0

1.0 0.5
0.2

10 -1 -25

25

50

75 C 100 TA

0 10 -2

10 -1

10 0

10 1 V 10 2 V CE

0 -25

25

50

75 C 100 TA

2007-04-02

SFH 309, SFH 309 FA

Mazeichnung Package Outlines

Area not flat 5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154)
3.1 (0.122) 2.9 (0.114) 0.7 (0.028) 0.4 (0.016) 0.8 (0.031) 0.4 (0.016)

2.54 (0.100) spacing

0.6 (0.024) 0.4 (0.016)

3.5 (0.138) 1.8 (0.071) 1.2 (0.047) 29 (1.142) 27 (1.063) Chip position 6.3 (0.248) 5.9 (0.232)

4.0 (0.157) 3.6 (0.142)

Collector (Transistor) Cathode (Diode)

GEOY6653

Mae in mm (inch) / Dimensions in mm (inch).

2007-04-02

SFH 309, SFH 309 FA

Ltbedingungen Soldering Conditions Wellenlten (TTW) TTW Soldering
300 C T 250 235 C ... 260 C 2. Welle 2. wave 200 1. Welle 1. wave 150 100 C ... 130 C 100 2 K/s 50 Zwangskhlung forced cooling ca 200 K/s 5 K/s 2 K/s

(nach CECC 00802) (acc. to CECC 00802)

OHLY0598

10 s

Normalkurve standard curve Grenzkurven limit curves

0 0 50 100 150 t 200 s 250

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

2007-04-02