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NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant

SFH 309 SFH 309 FA

Wesentliche Merkmale

t - RoHS Compliant SFH 309 SFH 309 FA Wesentliche Merkmale SFH 309 Features SFH 309

SFH 309

Features

SFH 309 SFH 309 FA Wesentliche Merkmale SFH 309 Features SFH 309 FA • Speziell geeignet

SFH 309 FA

• Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm (SFH 309) und bei 880 nm (SFH 309 FA)

Especially suitable for applications from 380 nm to 1180 nm (SFH 309) and of 880 nm (SFH 309 FA)

• Hohe Linearität

High linearity

• 3 mm-Plastikbauform im LED-Gehäuse

3 mm LED plastic package

• Gruppiert lieferbar

Available in groups

Anwendungen

Applications

• Lichtschranken für Gleich- und Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

• Photointerrupters

• Industrial electronics

• For control and drive circuits

Typ

Bestellnummer Ordering Code

Typ

Bestellnummer Ordering Codes

Type

Type

SFH 309

Q62702P0859

SFH 309 FA

Q62702-P0941

SFH 309-3/4

Q62702P3592

SFH 309 FA-3/4

Q62702-P3590

SFH 309-4

Q62702P0998

SFH 309 FA-4

Q62702-P0178

SFH 309-4/5

Q62702P3593

SFH 309 FA-4/5

Q62702-P3591

SFH 309-5

Q62702P0999

SFH 309 FA-5

Q62702-P0180

SFH 309-5/6

Q62702P3594

SFH 309 FA-5/6

Q62702-P5199

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SFH 309, SFH 309 FA

Grenzwerte Maximum Ratings

Bezeichnung

Symbol

Wert

Einheit

Parameter

Symbol

Value

Unit

Betriebs- und Lagertemperatur Operating and storage temperature range

T op ; T stg

– 40 + 100

°C

Kollektor-Emitterspannung Collector-emitter voltage

V CE

35

V

Kollektorstrom Collector current

I

C

15

mA

Kollektorspitzenstrom, τ < 10 μs Collector surge current

I

CS

75

mA

Verlustleistung, T A = 25 °C Total power dissipation

P tot

165

mW

Wärmewiderstand Thermal resistance

R thJA

450

K/W

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SFH 309, SFH 309 FA

Kennwerte ( T A = 25 °C, λ = 950 nm) Characteristics

Bezeichnung

Symbol

Wert

Einheit

Parameter

Symbol

Value

Unit

SFH 309

SFH 309 FA

Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity

λ S max

860

900

nm

Spektraler Bereich der Fotoempfindlichkeit

λ

380 1150

730 1120

nm

S

= 10% von S max

Spectral range of sensitivity

S

= 10% of S max

Bestrahlungsempfindliche Fläche (220 μm) Radiant sensitive area

A

0.038

0.038

mm

2

Abmessungen der Chipfläche Dimensions of chip area

L

× B

0.45 × 0.45

0.45 × 0.45

mm × mm

L

× W

Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface

H

2.4 2.8

2.4 2.8

mm

Halbwinkel

ϕ

± 12

± 12

Grad

Half angle

deg.

Kapazität, V CE = 0 V, f = 1 MHz, E = 0 Capacitance

C

CE

5.0

5.0

pF

Dunkelstrom

I

CEO

1 (200)

1 (200)

nA

Dark current

CE = 25 V, E = 0

V

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SFH 309, SFH 309 FA

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures.

Bezeichnung

Symbol

 

Wert

Einheit

Parameter

Symbol

Value

Unit

-2

-3

-4

-5

-6

Fotostrom, λ = 950 nm Photocurrent E e = 0.5 mW/cm 2 , V CE = 5 V SFH 309:

I

PCE

0.4

0.63

1.0

1.6

2.5

mA

 

0.8

1.25

2.0

3.2

5.0

E v = 1000 Ix, Normlicht/ standard light A, V CE = 5 V

I

PCE

1.5

2.8

4.5

7.2

11.2

mA

Anstiegszeit/Abfallzeit Rise and fall time I C = 1 mA, V CC = 5 V, R L = 1 kΩ

t r , t f

5

6

7

8

9

μs

Kollektor-Emitter-

V

CEsat

200

200

200

200

200

mV

Sättigungsspannung Collector-emitter saturation voltage

 

I C = I PCEmin 1) × 0.3,

E e = 0.5 mW/cm 2

1)

1)

I PCEmin ist der minimale Fotostrom der jeweiligen Gruppe. I PCEmin is the min. photocurrent of the specified group.

Directional Characteristics S rel = f (ϕ)

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SFH 309, SFH 309 FA

OHF01527 10 1 nA Ι CEO 10 0 -1 10 -2 10 -3 10
OHF01527
10 1
nA
Ι CEO
10 0
-1
10
-2
10
-3
10

0

5

10

15

20

25

30 V 35

V

CE

Relative Spectral Sensitivity, SFH 309 S rel = f (λ)

OHF01121 100 S rel % 80 60 40 20 0 400 600 800 1000 nm
OHF01121
100
S
rel
%
80
60
40
20
0
400
600
800
1000
nm
1200
λ

Total Power Dissipation

P tot = f ( T A )

λ Total Power Dissipation P t o t = f ( T A ) Relative Spectral

Relative Spectral Sensitivity, SFH 309 FA S rel = f (λ)

Sensitivity, SFH 309 FA S r e l = f ( λ ) Photocurrent I P

Photocurrent I PCE = f ( V CE ), E e = Parameter

I P C E = f ( V C E ), E e = Parameter Photocurrent

Photocurrent I PCE = f (E e ), V CE = 5 V

Dark Current

I CEO = f (V CE ), E = 0

Dark Current I CEO = f ( T A ), V CE = 25 V, E = 0

OHF01530 10 3 nA Ι CEO 10 2 10 1 10 0 10 -1 -25
OHF01530
10 3
nA
Ι
CEO
10 2
10 1
10 0
10 -1
-25
0 25
50
75
˚C
100
T A
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Capacitance C CE = f (V CE ), f = 1 MHz, E = 0

OHF01528 5.0 C pF CE 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10
OHF01528
5.0
C
pF
CE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10 -2
10 -1
10 0
10 1
V 10 2
V CE

5

Photocurrent

I PCE /I PCE25° = f (T A ), V CE = 5 V

OHF01524 1.6 Ι PCE Ι PCE 25 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0
OHF01524
1.6
Ι PCE
Ι
PCE 25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-25
0
25
50
75
C
100
T
A

SFH 309, SFH 309 FA

Maßzeichnung Package Outlines

Area not flat

5.2 (0.205) 4.5 (0.177) 4.1 (0.161) 3.9 (0.154) 0.6 (0.024) 0.4 (0.016) 4.0 (0.157) 3.5
5.2
(0.205)
4.5
(0.177)
4.1
(0.161)
3.9
(0.154)
0.6
(0.024)
0.4
(0.016)
4.0
(0.157)
3.5 (0.138)
3.6
(0.142)
1.8
(0.071)
1.2
(0.047)
Chip position
Collector (Transistor)
29
(1.142)
6.3
(0.248)
Cathode (Diode)
27
(1.063)
5.9
(0.232)
2.54
(0.100)
spacing
0.7
(0.028)
0.4
(0.016)
0.8
(0.031)
0.4
(0.016)
ø3.1 (0.122)
ø2.9 (0.114)

GEOY6653

Maße in mm (inch) / Dimensions in mm (inch).

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SFH 309, SFH 309 FA

Lötbedingungen Soldering Conditions Wellenlöten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802)
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW)
TTW Soldering
(nach CECC 00802)
(acc. to CECC 00802)
OHLY0598
300
10 s
C
Normalkurve
standard curve
T
250
235
C
260
C
Grenzkurven
2.
Welle
limit curves
2.
wave
200
1. Welle
1. wave
150
ca 200 K/s
2 K/s
5 K/s
100
C
130
C
100
Zwangskühlung
2 K/s
forced cooling
50
0
0
50
100
150
200
s 250
t
2 K/s forced cooling 50 0 0 50 100 150 200 s 250 t Published by

Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

with the express written approval of OSRAM OS.

components

1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.

1

, may only be used in life-support devices or systems

2

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